M12L64164A_07

ESMT SDRAM M12L64164A 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency (2 & 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock DQM for masking Auto & self refresh 15.6 μ s refresh interval 54 Pin TSOP (Type II) (400mil x 875mil ) PRODUCT NO. M12L64164A-5TG M12L64164A-6TG M12L64164A-7TG M12L64164A-5BG M12L64164A-6BG M12L64164A-7BG MAX FREQ. PACKAGE Comments 200MHz 166MHz 143MHz 200MHz 166MHz 143MHz 54 TSOP II 54 TSOP II 54 TSOP II 54 VBGA 54 VBGA 54 VBGA Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free ORDERING INFORMATION GENERAL DESCRIPTION The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. PIN ASSIGNMENT Top View V DD DQ 0 VD D Q DQ 1 DQ 2 VS SQ DQ 3 DQ 4 VD D Q DQ 5 DQ 6 VS SQ DQ 7 V DD LDQ M WE C AS R AS CS A 13 A 12 A 10 /AP A0 A1 A2 A3 V DD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 V SS DQ15 VS SQ DQ14 DQ13 VD D Q DQ12 DQ11 VS SQ DQ10 DQ 9 VD D Q DQ 8 VSS NC UDQM CLK C KE NC A 11 A9 A8 A7 A6 A5 A4 VSS 54 Ball FVBGA (8mmx8mm) Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 1/45 ESMT FUNCTIONAL BLOCK DIAGRAM CLK CKE Address Mode Register Clock Generator Bank D Bank C Bank B Row Address Buffer & Refresh Counter Row Decoder M12L64164A Bank A Sense Amplifier Command Decoder Control Logic CS RAS CAS WE Data Control Circuit Input & Output Buffer Latch Circuit Column Address Buffer & Refresh Counter L(U)DQM Column Decoder DQ PIN FUNCTION DESCRIPTION PIN CLK CS CKE A0 ~ A11 A12 , A13 NAME System Clock Chip Select Clock Enable Address Bank Select Address INPUT FUNCTION Active on the positive going edge to sample all inputs Disables or enables device operation by masking or enabling all inputs except CLK , CKE and L(U)DQM Masks system clock to freeze operation from the next clock cycle. CKE should be enabled at least one cycle prior new command. Disable input buffers for power down in standby. Row / column address are multiplexed on the same pins. Row address : RA0~RA11, column address : CA0~CA7 Selects bank to be activated during row address latch time. Selects bank for read / write during column address latch time. Latches row addresses on the positive going edge of the CLK with RAS Row Address Strobe RAS low. Enables row access & precharge. Latches column address on the positive going edge of the CLK with CAS Column Address Strobe CAS low. Enables column access. Enables write operation and row precharge. Latches data in starting from CAS , WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when L(U)DQM active. Data inputs / outputs are multiplexed on the same pins. Power and ground for the input buffers and the core logic. Isolated power supply and ground for the output buffers to provide improved noise immunity. This pin is recommended to be left No Connection on the device. WE Write Enable Data Input / Output Mask Data Input / Output Power Supply / Ground Data Output Power / Ground No Connection L(U)DQM DQ0 ~ DQ15 VDD / VSS VDDQ / VSSQ NC Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 2/45 ESMT ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage on any pin relative to VSS Voltage on VDD supply relative to VSS Storage temperature Power dissipation Short circuit current Note: SYMBOL VIN, VOUT VDD, VDDQ TSTG PD IOS VALUE -1.0 ~ 4.6 -1.0 ~ 4.6 -55 ~ +150 1 50 M12L64164A UNIT V V °C W mA Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. DC OPERATING CONDITION Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70 °C ) PARAMETER Supply voltage Input logic high voltage Input logic low voltage Output logic high voltage Output logic low voltage Input leakage current Output leakage current Note: SYMBOL VDD, VDDQ VIH VIL VOH VOL IIL IOL MIN 3.0 2.0 -0.3 2.4 -5 -5 0 TYP 3.3 MAX 3.6 VDD+0.3 0.8 0.4 5 5 UNIT V V V V V 1 2 IOH = -2mA IOL = 2mA 3 4 NOTE μA μA 1. VIH(max) = 4.6V AC for pulse width ≤ 10ns acceptable. 2. VIL(min) = -1.5V AC for pulse width ≤ 10ns acceptable. 3. Any input 0V ≤ VIN ≤ VDD + 0.3V, all other pins are not under test = 0V. 4. Dout is disabled , 0V ≤ VOUT ≤ VDD. CAPACITANCE (VDD = 3.3V, TA = 25 °C , f = 1MHZ) PARAMETER Input capacitance (A0 ~ A11, A13 ~ A12) Input capacitance (CLK, CKE, CS , RAS , CAS , WE & L(U)DQM) Data input/output capacitance (DQ0 ~ DQ15) CIN2 2 4 pF SYMBOL CIN1 MIN 2 MAX 4 UNIT pF COUT 2 5 pF Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 3/45 ESMT DC CHARACTERISTICS Recommended operating condition unless otherwise noted，TA = 0 to 70 °C PARAMETER Operating Current (One Bank Active) SYMBOL TEST CONDITION Burst Length = 1, t RC ≥ t RC(min), IOL = 0 mA, tcc = tcc(min) CKE ≤ VIL(max), tcc = tcc(min) CKE & CLK ≤ VIL(max), tcc = ∞ CKE ≥ VIH(min), CS ≤ VIH(min), tcc = tcc(min) Input signals are changed one time during 2CLK CKE ≥ VIH(min), CLK ≤ VIL(max), tcc = ∞ input signals are stable CKE ≤ VIL(max), tcc = tcc(min) CKE & CLK ≤ VIL(max), tcc = ∞ CKE ≥ VIH(min), CS ≥ VIH(min), tcc = tcc(min) Input signals are changed one time during 2CLK CKE ≥ VIH(min), CLK ≤ VIL(max), tcc = ∞ input signals are stable IOL = 0 mA, Page Burst, All Bank active Burst Length = 4, CAS Latency = 3 tRC ≥ tRC(min), tCC = tcc(min) CKE ≤ 0.2V 180 180 M12L64164A VERSION -5 100 -6 85 2 1 20 -7 85 UNIT NOTE ICC1 mA mA 1,2 ICC2P Precharge Standby Current in power-down mode ICC2PS Precharge Standby Current in non power-down mode ICC2N ICC2NS Active Standby Current in power-down mode Active Standby Current in non power-down mode (One Bank Active) ICC3P ICC3PS ICC3N ICC3NS ICC4 ICC5 ICC6 mA 10 10 10 30 25 150 150 1 140 140 mA mA mA mA mA 1,2 mA Operating Current (Burst Mode) Refresh Current Self Refresh Current Note : 1. Measured with outputs open. 2. Input signals are changed one time during 2 CLKS. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 4/45 ESMT AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V ，TA = 0 to 70 °C ) PARAMETER Input levels (Vih/Vil) Input timing measurement reference level Input rise and fall-time Output timing measurement reference level Output load condition VALUE 2.4/0.4 1.4 tr/tf = 1/1 1.4 See Fig. 2 M12L64164A UNIT V V ns V 3.3V 1200Ω Output 870Ω 50pF VOH (DC) =2.4V , IOH = -2 mA VOL (DC) =0.4V , IOL = 2 mA Output Z0 =50Ω Vtt = 1.4V 50 Ω 50pF (Fig. 1) DC Output Load Circuit (Fig. 2) AC Output Load Circuit OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) PARAMETER Row active to row active delay RAS to CAS delay Row precharge time Row active time @ Operating Row cycle time @ Auto refresh Last data in to col. address delay Last data in to row precharge Last data in to burst stop Col. address to col. address delay Number of valid Output data SYMBOL -5 tRRD(min) tRCD(min) tRP(min) tRAS(min) tRAS(max) tRC(min) tRFC(min) tCDL(min) tRDL(min) tBDL(min) tCCD(min) CAS latency = 3 CAS latency = 2 53 55 10 15 15 38 VERSION -6 12 18 18 40 100 58 60 1 2 1 1 2 1 63 70 -7 14 20 20 42 ns ns ns ns us ns ns CLK CLK CLK CLK ea 1 1,5 2 2 2 3 4 1 1 1 1 UNIT NOTE Note : 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then rounding off to the next higher integer. 2. Minimum delay is required to complete with. 3. All parts allow every cycle column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. 5. A new command may be given tRFC after self refresh exit. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 5/45 ESMT AC CHARACTERISTICS (AC operating condition unless otherwise noted) PARAMATER CLK cycle time CLK to valid output delay Output data hold time CLK high pulsh width CLK low pulsh width Input setup time Input hold time CLK to output in Low-Z CLK to output in Hi-Z Note : CAS latency = 3 CAS latency = 2 CAS latency = 3 CAS latency = 2 CAS latency = 3 CAS latency = 2 CAS latency = 3 CAS latency = 2 SYMBOL tCC -5 MIN 5 10 2.0 2.0 2.5 2.5 1.5 1 0 MAX 4.5 6 5.5 5.5 MIN 6 10 2.5 2.5 2.5 2.5 1.5 1 0 -6 MAX 5.5 6 5.5 6 MIN 7 10 2.5 2.5 2.5 2.5 1.5 1 0 -7 MAX 6 6 6 6 M12L64164A UNIT ns NOTE 1 tSAC ns 1,2 tOH tCH tCL tSS tSH tSLZ tSHZ ns ns ns ns ns ns ns 2 3 3 3 3 2 - 1. Parameters depend on programmed CAS latency. 2. If clock rising time is longer than 1ns. (tr/2 - 0.5) ns should be considered. 3. Assumed input rise and fall time (tr & tf) =1ns. If tr & tf is longer than 1ns. transient time compensation should be considered. i.e., [(tr + tf)/2 – 1] ns should be added to the parameter. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 6/45 ESMT FREQUENCY vs. AC PARAMETER RELATIONSHIP TABLE M12L64164A-5TG Frequency 200 MHz (5.0ns) 166 MHz (6.0ns) 143 MHZ(7.5ns ) 125 MHZ(8.0ns ) 111 MHZ(9.0ns ) CAS Latency 3 3 2 2 2 tRC 53ns 11 9 8 7 6 tRAS 38ns 8 7 6 5 5 tRP 15ns 3 3 3 2 2 tRRD 10ns 2 2 2 2 2 tRCD 15ns 3 3 3 2 2 tCCD 5ns 1 1 1 1 1 M12L64164A (Unit : number of clock) tCDL 5ns 1 1 1 1 1 tRDL 10ns 2 2 2 2 2 M12L64164A-6TG Frequency 166 MHz (6.0ns) 143 MHz (7.0ns) 133 MHZ(7.5ns ) 125 MHZ(8.0ns ) 100 MHZ(10.0ns ) CAS Latency 3 3 3 2 2 tRC 53ns 10 9 8 8 6 tRAS 38ns 7 6 6 5 4 tRP 15ns 3 3 3 3 2 tRRD 10ns 2 2 2 2 2 tRCD 15ns 3 3 3 3 2 (Unit : number of clock) tCCD 5ns 1 1 1 1 1 tCDL 5ns 1 1 1 1 1 tRDL 10ns 2 2 2 2 2 M12L64164A-7TG Frequency 143 MHZ(7.0ns ) 133 MHZ(7.5ns ) 125 MHZ(8.0ns ) 100 MHZ(10.0ns ) 83 MHZ(12.0ns ) CAS Latency 3 3 3 2 2 tRC 63ns 9 9 8 7 6 tRAS 42ns 6 6 6 5 4 tRP 20ns 3 3 3 2 2 tRRD 14ns 2 2 2 2 2 tRCD 20ns 3 3 3 2 2 (Unit : number of clock) tCCD 7ns 1 1 1 1 1 tCDL 7ns 1 1 1 1 1 tRDL 14ns 2 2 2 2 2 Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 7/45 ESMT SIMPLIFIED TRUTH TABLE COMMAND Register Mode Register set Auto Refresh Refresh Self Refresh Entry Exit CKEn-1 H H CKEn X H L H X X CS RAS CAS L L L H L L L L H X L H L L H X H L WE M12L64164A DQM A13 A10/AP A12 X X X X X X V V A11 A9~A0 Note 1,2 3 3 3 3 L H H X H H OP CODE X L H H X Row Address L H L H X V X L H X Column Address (A0~A7) Column Address (A0~A7) Bank Active & Row Addr. Read & Column Address Write & Column Address Auto Precharge Disable Auto Precharge Enable Auto Precharge Disable Auto Precharge Enable 4 4,5 4 4,5 6 H H H X X X L L L H L X H L H L H H L X V X X H X V X L H H X V X X H X V L L L X V X X H X V X X X V Burst Stop Precharge Bank Selection All Banks Clock Suspend or Active Power Down Entry Exit Entry Precharge Power Down Mode Exit DQM No Operating Command H L H L H L X X X X X X V X X 7 L H H H X H L X H X H X H X (V = Valid , X = Don’t Care. H = Logic High , L = Logic Low ) Note : 1.OP Code : Operating Code A0~A11 & A13~A12 : Program keys. (@ MRS) 2.MRS can be issued only at all banks precharge state. A new command can be issued after 2 CLK cycles of MRS. 3.Auto refresh functions are as same as CBR refresh of DRAM. The automatical precharge without row precharge of command is meant by “Auto”. Auto/self refresh can be issued only at all banks idle state. 4.A13~A12 : Bank select addresses. If both A13 and A12 are “Low” at read ,write , row active and precharge ,bank A is selected. If both A13 is “Low” and A12 is “High” at read ,write , row active and precharge ,bank B is selected. If both A13 is “High” and A12 is “Low” at read ,write , row active and precharge ,bank C is selected. If both A13 and A12 are “High” at read ,write , row active and precharge ,bank D is selected If A10/AP is “High” at row precharge , A13 and A12 is ignored and all banks are selected. 5.During burst read or write with auto precharge. new read/write command can not be issued. Another bank read/write command can be issued after the end of burst. New row active of the associated bank can be issued at tRP after the end of burst. 6.Burst stop command is valid at every burst length. 7.DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (write DQM latency is 0), but makes Hi-Z state the data-out of 2 CLK cycles after.(Read DQM latency is 2) Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 8/45 ESMT MODE REGISTER FIELD TABLE TO PROGRAM MODES Register Programmed with MRS Address Function A13~A12 RFU A11~A10/AP RFU A9 W.B.L A8 TM A7 A6 A5 A4 A3 BT A2 M12L64164A A1 A0 CAS Latency Burst Length Test Mode A8 0 0 1 1 A7 0 1 0 1 Type Mode Register Set Reserved Reserved Reserved A6 0 0 0 0 1 1 1 1 CAS Latency A5 0 0 1 1 0 0 1 1 A4 0 1 0 1 0 1 0 1 Latency Reserved Reserved 2 3 Reserved Reserved Reserved Reserved Burst Type A3 0 1 Type Sequential Interleave A2 0 0 0 0 1 1 1 1 A1 0 0 1 1 0 0 1 1 Burst Length A0 0 1 0 1 0 1 0 1 BT = 0 1 2 4 8 BT = 1 1 2 4 8 Write Burst Length A9 0 1 Length Burst Single Bit Reserved Reserved Reserved Reserved Reserved Reserved Full Page Reserved Full Page Length : 256 POWER UP SEQUENCE 1.Apply power and start clock, Attempt to maintain CKE = ”H”, DQM = ”H” and the other pin are NOP condition at the inputs. 2. Maintain stable power , stable clock and NOP input condition for a minimum of 200us. 3. Issue precharge commands for all banks of the devices. 4. Issue 2 or more auto-refresh commands. 5. Issue mode register set command to initialize the mode register. cf.) Sequence of 4 & 5 is regardless of the order. The device is now ready for normal operation. Note : 1. RFU(Reserved for future use) should stay “0” during MRS cycle. 2. If A9 is high during MRS cycle, “Burst Read Single Bit Write” function will be enabled. 3. The full column burst (256 bit) is available only at sequential mode of burst type. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 9/45 ESMT BURST SEQUENCE (BURST LENGTH = 4) Initial Adrress A1 0 0 1 1 A0 0 1 0 1 0 1 2 3 1 2 3 0 2 3 0 1 3 0 1 2 0 1 2 3 1 0 3 2 Sequential M12L64164A Interleave 2 3 0 1 3 2 1 0 BURST SEQUENCE (BURST LENGTH = 8) Initial A2 0 0 0 0 1 1 1 1 A1 0 0 1 1 0 0 1 1 A0 0 1 0 1 0 1 0 1 0 1 2 3 4 5 6 7 1 2 3 4 5 6 7 0 2 3 4 5 6 7 0 1 3 4 5 6 7 0 1 2 4 5 6 7 0 1 2 3 5 6 7 0 1 2 3 4 6 7 0 1 2 3 4 5 7 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 1 0 3 2 5 4 7 6 2 3 0 1 6 7 4 5 3 2 1 0 7 6 5 4 4 5 6 7 0 1 2 3 5 4 7 6 1 0 3 2 6 7 4 5 2 3 0 1 7 6 5 4 3 2 1 0 Sequential Interleave Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 10/45 ESMT DEVICE OPERATIONS CLOCK (CLK) The clock input is used as the reference for all SDRAM operations. All operations are synchronized to the positive going edge of the clock. The clock transitions must be monotonic between VIL and VIH. During operation with CKE high all inputs are assumed to be in valid state (low or high) for the duration of setup and hold time around positive edge of the clock for proper functionality and Icc specifications. CLOCK ENABLE(CKE) The clock enable (CKE) gates the clock onto SDRAM. If CKE goes low synchronously with clock (set-up and hold time same as other inputs), the internal clock suspended from the next clock cycle and the state of output and burst address is frozen as long as the CKE remains low. All other inputs are ignored from the next clock cycle after CKE goes low. When all banks are in the idle state and CKE goes low synchronously with clock, the SDRAM enters the power down mode from the next clock cycle. The SDRAM remains in the power down mode ignoring the other inputs as long as CKE remains low. The power down exit is synchronous as the internal clock is suspended. When CKE goes high at least “1CLK + tSS” before the high going edge of the clock, then the SDRAM becomes active from the same clock edge accepting all the input commands. BANK ADDRESSES (A13~A12) This SDRAM is organized as four independent banks of 1,048,576 words x 16 bits memory arrays. The A13~A12 inputs are latched at the time of assertion of RAS and CAS to select the bank to be used for the operation. The banks addressed A13~A12 are latched at bank active, read, write, mode register set and precharge operations. ADDRESS INPUTS (A0~A11) The 20 address bits are required to decode the 1,048,576 word locations are multiplexed into 12 address input pins (A0~A11). The 12 row addresses are latched along with RAS and A13~A12 during bank active command. The 8 bit column addresses are latched along with CAS , WE and A13~A12 during read or with command. NOP and DEVICE DESELECT When RAS , CAS and WE are high, The SDRAM performs no operation (NOP). NOP does not initiate any new operation, but is needed to complete operations which require more than single clock cycle like bank activate, burst read, auto refresh, etc. The device deselect is also a NOP and is entered by asserting CS high. CS high disables the command decoder so that RAS , CAS , WE and all the address inputs are ignored. POWER-UP M12L64164A 1.Apply power and start clock, Attempt to maintain CKE = “H”, DQM = “H” and the other pins are NOP condition at the inputs. 2.Maintain stable power, stable clock and NOP input condition for minimum of 200us. 3.Issue precharge commands for both banks of the devices. 4.Issue 2 or more auto-refresh commands. 5.Issue a mode register set command to initialize the mode register. cf.) Sequence of 4 & 5 is regardless of the order. The device is now ready for normal operation. MODE REGISTER SET (MRS) The mode register stores the data for controlling the various operating modes of SDRAM. It programs the CAS latency, burst type, burst length, test mode and various vendor specific options to make SDRAM useful for variety of different applications. The default value of the mode register is not defined, therefore the mode register must be written after power up to operate the SDRAM. The mode register is written by asserting low on CS , RAS , CAS and WE (The SDRAM should be in active mode with CKE already high prior to writing the mode register). The state of address pins A0~A11 and A13~A12 in the same cycle as CS , RAS , CAS and WE going low is the data written in the mode register. Two clock cycles is required to complete the write in the mode register. The mode register contents can be changed using the same command and clock cycle requirements during operation as long as all banks are in the idle state. The mode register is divided into various fields into depending on functionality. The burst length field uses A0~A2, burst type uses A3, CAS latency (read latency from column address) use A4~A6, vendor specific options or test mode use A7~A8, A10/AP~A11 and A13~A12. The write burst length is programmed using A9. A7~A8, A10/AP~A11 and A13~A12 must be set to low for normal SDRAM operation. Refer to the table for specific codes for various burst length, burst type and CAS latencies. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 11/45 ESMT DEVICE OPERATIONS (Continued) BANK ACTIVATE The bank activate command is used to select a random row in an idle bank. By asserting low on RAS and CS with desired row and bank address, a row access is initiated. The read or write operation can occur after a time delay of tRCD (min) from the time of bank activation. tRCD is the internal timing parameter of SDRAM, therefore it is dependent on operating clock frequency. The minimum number of clock cycles required between bank activate and read or write command should be calculated by dividing tRCD (min) with cycle time of the clock and then rounding of the result to the next higher integer. The SDRAM has four internal banks in the same chip and shares part of the internal circuitry to reduce chip area, therefore it restricts the activation of four banks simultaneously. Also the noise generated during sensing of each bank of SDRAM is high requiring some time for power supplies to recover before another bank can be sensed reliably. tRRD (min) specifies the minimum time required between activating different bank. The number of clock cycles required between different bank activation must be calculated similar to tRCD specification. The minimum time required for the bank to be active to initiate sensing and restoring the complete row of dynamic cells is determined by tRAS (min). Every SDRAM bank activate command must satisfy tRAS (min) specification before a precharge command to that active bank can be asserted. The maximum time any bank can be in the active state is determined by tRAS (max) and tRAS (max) can be calculated similar to tRCD specification. BURST READ The burst read command is used to access burst of data on consecutive clock cycles from an active row in an active bank. The burst read command is issued by asserting low on CS and RAS with WE being high on the positive edge of the clock. The bank must be active for at least tRCD (min) before the burst read command is issued. The first output appears in CAS latency number of clock cycles after the issue of burst read command. The burst length, burst sequence and latency from the burst read command is determined by the mode register which is already programmed. The burst read can be initiated on any column address of the active row. The address wraps around if the initial address does not start from a boundary such that number of outputs from each I/O are equal to the burst length programmed in the mode register. The output goes into high-impedance at the end of burst, unless a new burst read was initiated to keep the data output gapless. The burst read can be terminated by issuing another burst read or burst write in the same bank or the other active bank or a precharge command to the same bank. The burst stop command is valid at every page burst length. BURST WRITE The burst write command is similar to burst read command and is used to write data into the SDRAM on consecutive clock cycles in adjacent addresses depending on burst length M12L64164A and burst sequence. By asserting low on CS , CAS and WE with valid column address, a write burst is initiated. The data inputs are provided for the initial address in the same clock cycle as the burst write command. The input buffer is deselected at the end of the burst length, even though the internal writing can be completed yet. The writing can be complete by issuing a burst read and DQM for blocking data inputs or burst write in the same or another active bank. The burst stop command is valid at every burst length. The write burst can also be terminated by using DQM for blocking data and procreating the bank tRDL after the last data input to be written into the active row. See DQM OPERATION also. DQM OPERATION The DQM is used mask input and output operations. It works similar to OE during operation and inhibits writing during write operation. The read latency is two cycles from DQM and zero cycle for write, which means DQM masking occurs two cycles later in read cycle and occurs in the same cycle during write cycle. DQM operation is synchronous with the clock. The DQM signal is important during burst interrupts of write with read or precharge in the SDRAM. Due to asynchronous nature of the internal write, the DQM operation is critical to avoid unwanted or incomplete writes when the complete burst write is required. Please refer to DQM timing diagram also. PRECHARGE The precharge is performed on an active bank by asserting low on clock cycles required between bank activate and clock cycles required between bank activate and CS , RAS , WE and A10/AP with valid A13~A12 of the bank to be procharged. The precharge command can be asserted anytime after tRAS (min) is satisfy from the bank active command in the desired bank. tRP is defined as the minimum number of clock cycles required to complete row precharge is calculated by dividing tRP with clock cycle time and rounding up to the next higher integer. Care should be taken to make sure that burst write is completed or DQM is used to inhibit writing before precharge command is asserted. The maximum time any bank can be active is specified by tRAS (max). Therefore, each bank activate command. At the end of precharge, the bank enters the idle state and is ready to be activated again. Entry to power-down, Auto refresh, Self refresh and Mode register set etc. is possible only when all banks are in idle state. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 12/45 ESMT DEVICE OPERATIONS (Continued) AUTO PRECHARGE The precharge operation can also be performed by using auto precharge. The SDRAM internally generates the timing to satisfy tRAS (min) and “tRP” for the programmed burst length and CAS latency. The auto precharge command is issued at the same time as burst write by asserting high on A10/AP, the bank is precharge command is asserted. Once auto precharge command is given, no new commands are possible to that particular bank until the bank achieves idle state. BOTH BANKS PRECHARGE Both banks can be precharged at the same time by using Precharge all command. Asserting low on CS , RAS , and WE with high on A10/AP after all banks have satisfied tRAS requirement, performs precharge on all banks. At the end of tRP after performing precharge all, all banks are in idle state. (min) M12L64164A SELF REFRESH The self refresh is another refresh mode available in the SDRAM. The self refresh is the preferred refresh mode for data retention and low power operation of SDRAM. In self refresh mode, the SDRAM disables the internal clock and all the input buffers except CKE. The refresh addressing and timing is internally generated to reduce power consumption. The self refresh mode is entered from all banks idle state by asserting low on CS , RAS , CAS and CKE with high on WE . Once the self refresh mode is entered, only CKE state being low matters, all the other inputs including clock are ignored to remain in the refresh. The self refresh is exited by restarting the external clock and then asserting high on CKE. This must be followed by NOP’s for a minimum time of tRFC before the SDRAM reaches idle state to begin normal operation. AUTO REFRESH The storage cells of SDRAM need to be refreshed every 64ms to maintain data. An auto refresh cycle accomplishes refresh of a single row of storage cells. The internal counter increments automatically on every auto refresh cycle to refresh all the rows. An auto refresh command is issued by asserting low on CS , RAS and CAS with high on CKE and WE . The auto refresh command can only be asserted with both banks being in idle state and the device is not in power down mode (CKE is high in the previous cycle). The time required to complete the auto refresh operation is specified by tRFC (min). The minimum number of clock cycles required can be calculated by driving tRFC with clock cycle time and them rounding up to the next higher integer. The auto refresh command must be followed by NOP’s until the auto refresh operation is completed. The auto refresh is the preferred refresh mode when the SDRAM is being used for normal data transactions. The auto refresh cycle can be performed once in 15.6us. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 13/45 ESMT COMMANDS CLK M12L64164A Mode register set command CKE CS H ( CS , RAS , CAS , WE = Low) RAS CAS WE A12, A13 A10 Add Fig. 1 Mode register set command The M12L64164A has a mode register that defines how the device operates. In this command, A0 through A13 are the data input pins. After power on, the mode register set command must be executed to initialize the device. The mode register can be set only when all banks are in idle state. During 2CLK (tRSC) following this command, the M12L64164A cannot accept any other commands. Activate command CLK ( CS , RAS = Low, CAS , WE = High) The M12L64164A has four banks, each with 4,096 rows. This command activates the bank selected by A12 and A13 (BS) and a row address selected by A0 through A11. This command corresponds to a conventional DRAM’s RAS falling. CKE CS RAS CAS WE A12, A13 (Bank select) H A10 Add Row Row Fig. 2 Row address stroble and bank active command Precharge command ( CS , RAS , WE = Low, CAS = High ) This command begins precharge operation of the bank selected by A12 and A13 (BS). When A10 is High, all banks are precharged, regardless of A12 and A13. When A10 is Low, only the bank selected by A12 and A13 is precharged. After this command, the M12L64164A can’t accept the activate command to the precharging bank during tRP (precharge to activate command period). This command corresponds to a conventional DRAM’s RAS rising. CLK CKE CS RAS CAS WE (Bank select) (Precharge select) H A12, A13 A10 Add Fig. 3 Precharge command Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 14/45 ESMT Write command CLK M12L64164A ( CS , CAS , WE = Low, RAS = High) If the mode register is in the burst write mode, this command sets the burst start address given by the column address to begin the burst write operation. The first write data in burst can be input with this command with subsequent data on following clocks. CKE CS RAS CAS WE A12, A13 H (Bank select) A10 Add Col. Fig. 4 Column address and write command Read command ( CS , CAS = Low, RAS , WE = High) CLK CKE CS H Read data is available after CAS latency requirements have been met. This command sets the burst start address given by the column address. RAS CAS WE A12, A13 (Bank select) A10 Add Col. Fig. 5 Column address and read command CBR (auto) refresh command ( CS , RAS , CAS = Low, WE , CKE = High) This command is a request to begin the CBR refresh operation. The refresh address is generated internally. Before executing CBR refresh, all banks must be precharged. After this cycle, all banks will be in the idle (precharged) state and ready for a row activate command. During tRC period (from refresh command to refresh or activate command), the M12L64164A cannot accept any other command. CLK CKE CS RAS CAS WE (Bank select) H A12, A13 A10 Add Fig. 6 Auto refresh command Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 15/45 ESMT Self refresh entry command ( CS , RAS , CAS , CKE = Low , WE = High) After the command execution, self refresh operation continues while CKE remains low. When CKE goes to high, the M12L64164A exits the self refresh mode. During self refresh mode, refresh interval and refresh operation are performed internally, so there is no need for external control. Before executing self refresh, all banks must be precharged. CLK CKE CS RAS CAS WE (Bank select) M12L64164A A12, A13 A10 Add Fig. 7 Self refresh entry command CLK Burst stop command ( CS , WE = Low, RAS , CAS = High) This command terminates the current burst operation. Burst stop is valid at every burst length. CKE CS RAS CAS WE (Bank select) H A12, A13 A10 Add Fig. 8 Burst stop command No operation ( CS = Low , RAS , CAS , WE = High) This command is not a execution command. No operations begin or terminate by this command. CLK CKE CS RAS CAS WE A12, A13 (Bank select) H A10 Add Fig. 9 No operation Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 16/45 ESMT BASIC FEATURE AND FUNCTION DESCRIPTIONS 1. CLOCK Suspend 1 ) Cl o c k S u sp e n d e d D u r in g W r i t e ( B L = 4 ) 2 ) C lo c k S u s p e n d e d D u r i n g R e a d ( B L =4 ) M12L64164A CLK CM D CK E I nt e r n al CL K DQ ( C L 2 ) DQ ( C L 3 ) D0 D0 D1 D1 D2 D2 D3 D3 Q0 Q1 Q0 Q2 Q1 Q3 Q2 Q3 WR RD Masked by C KE N o t W r i tt e n Su s pe nd ed D ou t 2. DQM Operation 1)W rite Mask (BL=4) 2) Read Mas k (B L= 4) CLK CMD WR RD DQM Ma s k e d b y D Q M Ma s k e d b y D Q M Hi- Z DQ(CL2) DQ(CL3) D0 D1 D1 D3 D3 Q0 Q2 Q1 Q3 D0 Hi- Z Q2 Q3 DQ M t o D at a -i n M ask = 0 DQ M to D at a- ou t M ask = 2 *Note2 3)DQM with clc ok su sp end ed (F ull Page Read ) CLK CMD CKE Inter nal CLK DQM Q0 Hi- Z RD DQ(CL2) DQ(CL3) Q2 Q1 Hi-Z Q4 Q3 Hi- Z Q6 Q5 Q7 Q6 Q8 Q7 Q9 Q8 Hi-Z Hi-Z Hi-Z *Note :1. CKE to CLK disable/enable = 1CLK. 2. DQM masks data out Hi-Z after 2CLKs which should masked by CKE ”L”. 3. DQM masks both data-in and data-out. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 17/45 ESMT 3. CAS Interrupt (I) * Not e 1 1) Re ad i nt e rr upt ed b y R ea d ( B L= 4) M12L64164A CLK CMD ADD D Q ( CL 2 ) DQ ( C L 3 ) RD A RD B Q A0 QB0 QA0 QB1 Q B0 QB2 QB1 QB3 QB2 QB3 tC C D *N ote 2 2) W ri t e i n t e rr up t ed by W r it e ( B L = 2) 3 ) Wr it e i nt e rr u pt e d b y R e a d ( B L = 2) CL K CMD WR WR * N ote 2 WR RD * No t e 2 tC CD ADD DQ A t CC D A B DB0 DB 1 D Q ( CL 2 ) DQ ( C L 3 ) B DB 0 DB1 DB0 DB1 DA 0 DA0 DA0 t CD L *N ote 3 t CD L *N ote 3 *Note : 1. By “interrupt” is meant to stop burst read/write by external before the end of burst. By ” CAS interrupt ”, to stop burst read/write by CAS access; read and write. 2. tCCD : CAS to CAS delay. (=1CLK) 3. tCDL : Last data in to new column address delay. (=1CLK) Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 18/45 ESMT 4. CAS Interrupt (II) : Read Interrupted by Write & DQM M12L64164A ( a) CL =2 ,B L= 4 CLK i)CMD DQM WR RD DQ ii)CMD DQM D0 D1 WR D2 D3 RD DQ iii)CMD DQM Hi-Z D0 D1 WR D2 D3 RD DQ iv)CMD DQM Hi-Z D0 D1 WR D2 D3 RD DQ Q0 HH - ZZ i i*Note1 D0 D1 D2 D3 Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 19/45 ESMT (b) CL =3 ,B L= 4 CLK i)CMD DQM DQ RD WR M12L64164A D0 RD D1 WR D2 D3 ii)CMD DQM DQ D0 D1 WR D2 D3 iii)CMD DQM RD DQ iv)CMD DQM DQ v)CM D DQM DQ RD RD D0 D1 WR D2 D3 Hi-Z D0 D1 WR D2 D3 Q0 Hi-Z *Note1 D0 D1 D2 D3 *Note : 1. To prevent bus contention, there should be at least one gap between data in and data out. 5. Write Interrupted by Precharge & DQM CLK CMD WR *Note3 DQM DQ *Note2 D0 D1 D2 D3 Ma s k e d b y D Q M *Note : 1. To prevent bus contention, DQM should be issued which makes at least one gap between data in and data out. 2. To inhibit invalid write, DQM should be issued. 3. This precharge command and burst write command should be of the same bank, otherwise it is not precharge interrupt but only another bank precharge of four banks operation. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 20/45 ESMT 6. Precharge 1)Normal W rit e (BL=4) 2) Norm al R ead (B L= 4) M12L64164A CLK CMD DQ WR D0 D1 D2 D3 PRE CLK CMD RD Q0 Q1 PRE Q2 CL=2 *Note2 DQ(CL2) Q3 tRD L *Note1 CMD DQ( CL3) Q0 PRE CL= 3 *Note2 Q1 Q2 Q3 . 7. Auto Precharge 1)Normal W rit e (BL=4) 2) Normal Read (B L= 4) CLK CMD DQ CLK WR D0 D1 D2 D3 CMD RD D0 D1 D0 D2 D3 D3 DQ(CL2) tRDL (min ) DQ(CL3) *Note3 D1 D2 Aut o Pr ech ar ge st ar t s *Note3 Auto Pr ech arge st art s *Note : 1. tRDL : Last data in to row precharge delay. 2. Number of valid output data after row precharge : 1,2 for CAS Latency = 2,3 respectively. 3. The row active command of the precharge bank can be issued after tRP from this point. The new read/write command of other activated bank can be issued from this point. At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 21/45 ESMT 8. Burst Stop & Interrupted by Precharge 1) W ri te B ur s t S t op ( BL= 8 ) 1) W ri t e in t err up t ed by pr ec ha rg e ( B L= 4) M12L64164A CLK CM D WR ST OP CLK CM D *N ote3 WR t R DL PRE *N ote4 DQ M DQ D0 D1 D2 D3 D4 DQ M DQ D0 D1 Mask Mask D5 t B DL *N ote1 2 )R e ad B ur s t S t op (B L= 4) 2 )R ea d i nt er ru pt ed by pr ec har ge (B L =4) CL K CMD DQ ( C L 2 ) D Q( C L3) RD STO P *N ote2 CL K CMD RD PRE *N ote5 Q0 Q1 * Not e 2 Q0 Q1 D Q( C L2) Q0 Q1 Q0 Q2 Q1 Q3 Q2 Q3 D Q ( CL 3 ) 9. MRS 1 )M o d e R e g is t e r S e t CLK CMD *N o t e 6 PRE M RS ACT t RP 2C LK *Note: 1. tBDL : 1 CLK ; Last data in to burst stop delay. Read or write burst stop command is valid at every burst length. 2. Number of valid output data after burst stop : 1,2 for CAS latency = 2,3 respectiviely. 3. Write burst is terminated. tRDL determinates the last data write. 4. DQM asserted to prevent corruption of locations D2 and D3. 5. Precharge can be issued here or earlier (satisfying tRAS min delay) with DQM. 6. PRE : All banks precharge, if necessary. MRS can be issued only at all banks precharge state. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 22/45 ESMT 10. Clock Suspend Exit & Power Down Exit 1) Cl o ck S u sp en d (= Ac t ive P ow er Do wn ) Exi t M12L64164A 2)P ower Down (= Pr ec harg e Powe r Down ) CLK CKE Inter nal CLK CMD CLK CKE Internal CLK RD CMD tSS *Note1 tSS *Note2 NOP AC T 11. Auto Refresh & Self Refresh 1) A u t o Re f r es h & S e lf R ef r e s h *N ote3 CLK *N ote4 CM D * No t e 5 PRE AR CM D CKE t RP 2 ) S el f Re f r es h *N ote6 t RF C CLK *N ote4 CM D PRE SR CMD CKE tRP tR F C *Note : 1. Active power down : one or more banks active state. 2. Precharge power down : all banks precharge state. 3. The auto refresh is the same as CBR refresh of conventional DRAM. No precharge commands are required after auto refresh command. During tRFC from auto refresh command, any other command can not be accepted. 4. Before executing auto/self refresh command, all banks must be idle state. 5. MRS, Bank Active, Auto/Self Refresh, Power Down Mode Entry. 6. During self refresh entry, refresh interval and refresh operation are performed internally. After self refresh entry, self refresh mode is kept while CKE is low. During self refresh entry, all inputs expect CKE will be don’t cared, and outputs will be in Hi-Z state. For the time interval of tRFC from self refresh exit command, any other command can not be accepted. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 23/45 ESMT 12. About Burst Type Control M12L64164A Sequential Counting Basic MODE Interleave Counting At MRS A3 = “0”. See the BURST SEQUENCE TABLE. (BL = 4,8) BL = 1, 2, 4, 8 and full page. At MRS A3 = “1”. See the BURST SEQUENCE TABLE. (BL = 4,8) BL = 4, 8 At BL =1, 2 interleave Counting = Sequential Counting Every cycle Read/Write Command with random column address can realize Random Column Access. That is similar to Extended Data Out (EDO) Operation of conventional DRAM. Random MODE Random Column Access tCCD = 1 CLK 13. About Burst Length Control 1 Basic MODE 2 4 8 Full Page Random MODE Burst Stop RAS Interrupt (Interrupted by Precharge) At MRS A210 = “000” At auto precharge . tRAS should not be violated. At MRS A210 = “001” At auto precharge . tRAS should not be violated. At MRS A210 = “010” At MRS A210 = “011” At MRS A210 = “111” At the end of the burst length , burst is warp-around. tBDL = 1, Valid DQ after burst stop is 1, 2 for CAS latency 2, 3 respectively. Using burst stop command, any burst length control is possible. Before the end of burst. Row precharge command of the same bank stops read /write burst with auto precharge. tRDL = 1 with DQM , Valid DQ after burst stop is 1, 2 for CAS latency 2, 3 respectively. During read/write burst with auto precharge, RAS interrupt can not be issued. Before the end of burst, new read/write stops read/write burst and starts new read/write burst. During read/write burst with auto precharge, CAS interrupt can not be issued. Interrupt MODE CAS Interrupt Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 24/45 ESMT FUNCTION TURTH TABLE (TABLE 1) Current State CS RAS CAS WE M12L64164A BA ADDR ACTION Note IDLE Row Active Read Write Read with Auto Precharge Write with Auto Precharge H L L L L L L L H L L L L L L L H L L L L L L L H L L L L L L L H L L L L L H L L L L L X H H H L L L L X H H H H L L L X H H H H L L L X H H H H L L L X H H H L L X H H H L L X H H L H H L L X H H L L H H L X H H L L H H L X H H L L H H L X H H L H L X H H L H L X H L X H L H L X H L H L H L X X H L H L H L X X H L H L H L X X H L X X X X H L X X X X X X BA BA BA X OP code X X X BA BA BA BA X X X X BA BA BA BA X X X X BA BA BA BA X X X X BA BA X X X X BA BA X X X X CA, A10/AP RA A10/AP X OP code X X X CA, A10/AP CA, A10/AP RA A10/AP X X X X CA, A10/AP CA, A10/AP RA A10/AP X X X X CA, A10/AP CA, A10/AP RA A10/AP X X X X CA, A10/AP RA, RA10 X X X X CA, A10/AP RA, RA10 X NOP NOP ILLEGAL ILLEGAL Row (&Bank) Active ; Latch RA NOP Auto Refresh or Self Refresh Mode Register Access NOP NOP ILLEGAL Begin Read ; latch CA ; determine AP Begin Write ; latch CA ; determine AP ILLEGAL Precharge ILLEGAL NOP (Continue Burst to End Row Active) NOP (Continue Burst to End Row Active) Term burst Row active Term burst, New Read, Determine AP Term burst, New Write, Determine AP ILLEGAL Term burst, Precharge timing for Reads ILLEGAL NOP (Continue Burst to End Row Active) NOP (Continue Burst to End Row Active) Term burst Row active Term burst, New Read, Determine AP Term burst, New Write, Determine AP ILLEGAL Term burst, Precharge timing for Writes ILLEGAL NOP (Continue Burst to End Row Active) NOP (Continue Burst to End Row Active) ILLEGAL ILLEGAL ILLEGAL ILLEGAL NOP (Continue Burst to End Row Active) NOP (Continue Burst to End Row Active) ILLEGAL ILLEGAL ILLEGAL ILLEGAL 2 2 4 5 5 2 2 3 2 3 3 2 3 2 2 Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 25/45 ESMT Current State CS RAS CAS WE M12L64164A BA ADDR ACTION Note Read with Auto Precharge Row Activating Refreshing Mode Register Accessing H L L L L L L H L L L L L L H L L L L H L L L L X H H H L L L X H H H L L L X H H L L X H H H L X H H L H H L X H H L H H L X H L H L X H H L X X H L X H L X X H L X H L X X X X X X X H L X X X X X BA BA BA X X X X BA BA BA X X X X X X X X X X X X X X CA RA A10/AP X X X X CA RA A10/AP X X X X X X X X X X X NOP Idle after tRP NOP Idle after tRP ILLEGAL ILLEGAL ILLEGAL NOP Idle after tRPL ILLEGAL NOP Row Active after tRCD NOP Row Active after tRCD ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL NOP Idle after tRFC NOP Idle after tRFC ILLEGAL ILLEGAL ILLEGAL NOP Idle after 2clocks NOP Idle after 2clocks ILLEGAL ILLEGAL ILLEGAL BA = Bank Address CA = Column Address 2 2 2 4 2 2 2 2 Abbreviations : RA = Row Address NOP = No Operation Command AP = Auto Precharge *Note : 1. All entries assume the CKE was active (High) during the precharge clock and the current clock cycle. 2. Illegal to bank in specified state ; Function may be legal in the bank indicated by BA, depending on the state of the bank. 3. Must satisfy bus contention, bus turn around, and/or write recovery requirements. 4. NOP to bank precharge or in idle state. May precharge bank indicated by BA (and A10/AP). 5. Illegal if any bank is not idle. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 26/45 ESMT FUNCTION TRUTH TABLE (TABLE2) Current State CKE ( n-1 ) H L L L L L L H L L L L L L H H H H H H H H H L H H L L CKE n X H H H H H L X H H H H H L H L L L L L L L L L H L H L CS RAS CAS WE M12L64164A ADDR ACTION Note Self Refresh All Banks Precharge Power Down All Banks Idle Any State other than Listed above X H L L L L X X H L L L L X X H L L L L L L L X X X X X X X H H H L X X X H H H L X X X H H H L L L L X X X X X X X H H L X X X X H H L X X X X H H L H H L L X X X X X X X H L X X X X X H L X X X X X H L X H H L L X X X X X X X X X X X X X X X X X X X X X X X X RA X X OP Code X X X X X INVALID Exit Self Refresh Idle after tRFC (ABI) Exit Self Refresh Idle after tRFC (ABI) ILLEGAL ILLEGAL ILLEGAL NOP (Maintain Self Refresh) INVALID Exit Self Refresh ABI Exit Self Refresh ABI ILLEGAL ILLEGAL ILLEGAL NOP (Maintain Low Power Mode) Refer to Table1 Enter Power Down Enter Power Down ILLEGAL ILLEGAL Row (& Bank) Active NOP Enter Self Refresh Mode Register Access NOP Refer to Operations in Table 1 Begin Clock Suspend next cycle Exit Clock Suspend next cycle Maintain Clock Suspend 6 6 7 7 8 8 8 9 9 Abbreviations : ABI = All Banks Idle, RA = Row Address *Note : 6.CKE low to high transition is asynchronous. 7.CKE low to high transition is asynchronous if restart internal clock. A minimum setup time 1CLK + tSS must be satisfy before any command other than exit. 8.Power down and self refresh can be entered only from the all banks idle state. 9.Must be a legal command. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 27/45 ESMT tCH 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 M12L64164A Single Bit Read-Write-Read Cycle (Same Page) @ CAS Latency = 3,Burst Length = 1 16 17 18 19 CLOCK tCL tCC CKE *Note1 HIGH tRAS tRC tSH tRP tSS CS tRCD tSH RAS tSS CAS tSS tSH ADDR Ra tSS *Note2 *Note2,3 *Note2,3 *Note2,3 *Note4 *Note2 tSH tCCD Ca Cb Cc Rb A13, A1 2 BS BS BS BS BS BS A10 /A P Ra *Note 3 *Note 3 *Note 3 *Note4 Rb tSAC DQ Qa tSLZ WE tSS tSS DQ M tOH Db tSS tSH tSH Qc tSH Row Active Read Write Read Precharge Row Active :D on' t Ca re Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 28/45 ESMT Note : 1. All input expect CKE & DQM can be don’t care when CS is high at the CLK high going edge. 2. Bank active @ read/write are controlled by A13~A12. A13 A12 Active & Read/Write M12L64164A 0 0 1 1 0 1 0 1 Bank A Bank B Bank C Bank D 3. Enable and disable auto precharge function are controlled by A10/AP in read/write command A10/AP A13 A12 Operating 0 0 0 1 1 0 1 0 1 1 0 1 0 1 0 1 0 1 Disable auto precharge, leave A bank active at end of burst. Disable auto precharge, leave B bank active at end of burst. Disable auto precharge, leave C bank active at end of burst. Disable auto precharge, leave D bank active at end of burst. Enable auto precharge , precharge bank A at end of burst. Enable auto precharge , precharge bank B at end of burst. Enable auto precharge , precharge bank C at end of burst. Enable auto precharge , precharge bank D at end of burst. 4. A10/AP and A13~A12 control bank precharge when precharge is asserted. A10/AP A13 A12 Precharge 0 0 0 0 1 0 0 1 1 X 0 1 0 1 X Bank A Bank B Bank C Bank D All Banks Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 29/45 ESMT Power Up Sequence 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 M12L64164A 17 18 19 CLOCK CKE High level is n ecessar y CS tRP RAS tRFC tRFC CAS ADDR Key RAa A1 3 A1 2 A10 /AP RAa DQ High-Z WE DQM High level is necessar y Precharge (All Banks) Auto Ref resh Auto Ref res h Mode Register Set Row Active (A- Bank) : Don't care Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 30/45 ESMT Read & Write Cycle at Same Bank @ Burst Length = 4 0 CLOCK M12L64164A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 CKE HI GH t RC CS *Note1 tRCD RAS *Note2 CAS ADDR Ra Ca0 Rb Cb0 A12 A13 A10/AP Ra Rb tOH CL=2 DQ CL=3 Qa0 Qa1 Qa2 Qa3 Db0 Db1 Db2 Db3 t S AC Qa0 tOH Qa1 Qa2 tS H Z Qa3 *Note3 tRDL Db0 Db1 Db2 Db3 t S AC WE tS H Z *Note3 tRDL DQM Row Active (A- Ban k) Read (A- Ban k) Precharge (A- Ban k) Row Active (A- Bank) W r ite (A- Ban k) Precharge (A- Bank) : Don't care *Note : 1. Minimum row cycle times is required to complete internal DRAM operation. 2. Row precharge can interrupt burst on any cycle. [CAS Latency-1] number of valid output data is available after Row precharge. Last valid output will be Hi-Z (tSHZ) after the clock. 3. Output will be Hi-Z after the end of burst. (1,2,4,8 & Full page bit burst) Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 31/45 ESMT Page Read & Write Cycle at Same Bank @ Burst Length = 4 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 M12L64164A 17 18 19 CLOCK CKE HIGH CS tRCD RAS *Note2 CAS ADDR Ra Ca Cb Cc Cd A1 3 A1 2 A10 /A P Ra tRDL CL =2 DQ CL =3 Q a0 Qa1 Q b0 Qb1 Dc0 Dc1 Dd0 Dd1 Q a0 Qa1 Q b0 Q b1 Qb2 Dc0 Dc1 Dd0 Dd1 tCDL WE *Note1 *Note3 DQM Row Active ( A - Bank ) Read ( A - Bank ) Read ( A - Bank ) W rite ( A - Bank ) W rite ( A - Bank ) Precharge ( A - B an k ) :D on' t Ca re Note : 1. To Write data before burst read ends. DQM should be asserted three cycle prior to write command to avoid bus contention. 2. Row precharge will interrupt writing. Last data input , tRDL before row precharge , will be written. 3. DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input data after Row precharge cycle will be masked internally. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 32/45 ESMT Page Read Cycle at Different Bank @ Burst Length = 4 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 M12L64164A 17 18 19 CLOCK CKE HIGH *Note1 CS RAS *Note2 CAS ADDR RAa RBb CAa RCc CBb RDd CCc CDd A1 3 A1 2 A10 /AP RAa RBb RCc RDd CL=2 DQ CL=3 Q A a 0 Q A a 1 Q A a 2 Q B b 0 Q B b 1 Q B b 2 Q C c 0 Q C c 1 Q C c 2 QD d 0 Q D d 1 Q D d2 Q A a 0 Q A a 1 Q A a 2 Q B b 0 Q B b 1 Q B b 2 Q C c 0 Q C c 1 Q C c 2 Q D d 0 QD d 1 Q D d 2 WE DQM Row A ct ive ( A-B ank ) Read (A -Bank ) Read (B -Bank ) Read ( C- Bank ) Row Act ive ( D- Bank ) Read ( D- Bank ) Pre charg e (C -B an k) Pre charge (D -B an k) Row A ct ive ( B-B ank ) Row Act ive (C -B an k) Precharge (A- Ban k) Pre charg e (B- Ban k) :Don't Care Note: 1. CS can be don’t cared when RAS , CAS and WE are high at the clock high going edge. 2. To interrupt a burst read by row precharge, both the read and the precharge banks must be the same. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 33/45 ESMT Page Write Cycle at Different Bank @ Burst Length = 4 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 M12L64164A 17 18 19 CLOCK CKE HIGH CS RAS *Note2 CAS ADDR RAa RBb CAa CBb RCc RDd CCc CDd A1 3 A1 2 A10 /AP RAa RBb RCc RDd DQ DAa0 DAa1 DAa2 DAa3 DBb0 DBb1 DBb2 DBb3 D C c 0 D C c 1 DD d0 DD d1 CD d2 tCDL WE tRDL *Note1 DQM Row Active ( A - Bank ) Write (A-Bank ) Write (B -Bank ) Row A ct ive ( D- Bank ) Write (D -B an k) Pr echarg e (A ll Bank s) Row A ct ive ( B-B ank ) Row A ct ive ( C- Bank ) Write (C -B an k) : Don't care *Note : 1. To interrupt burst write by Row precharge , DQM should be asserted to mask invalid input data. 2. To interrupt burst write by Row precharge , both the write and the precharge banks must be the same. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 34/45 ESMT Read & Write Cycle at Different Bank @ Burst Length = 4 0 CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 M12L64164A 16 17 18 19 CKE HIGH CS RAS CAS ADDR RAa CAa RDb CDb RBc CBc A1 3 A1 2 A10 /A P RAa RBb RAc tCDL CL =2 DQ CL =3 QAa0 QAa1 QAa2 QAa3 DD b0 Ddb1 DD b2 DD d3 QAa0 QAa1 QAa2 QAa3 DD b0 Ddb1 DD b2 DD d3 *Note1 QBc0 QBc1 QBc2 QBc0 QBc1 WE DQM Row Active (A-Bank) Read (A-Bank) Precharge (A-Bank) Row Active (D-Bank) W rite (D-Bank) Row Active (B-Bank) Read (B- Ban k ) :D on' t Care *Note : 1. tCDL should be met to complete write. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 35/45 ESMT Read & Write cycle with Auto Precharge @ Burst Length = 4 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 M12L64164A 17 18 19 CLOCK CKE HIGH CS RAS CAS ADDR Ra Rb Ca Cb A1 3 A1 2 A10 /A P Ra Rb CL =2 DQ CL =3 QAa0 QAa1 QAa2 QAa3 DD b0 Ddb1 DD b2 DD d3 QAa0 QAa1 QAa2 QAa3 DD b0 Ddb1 DD b2 DD d3 WE DQM R ow Active ( A - Bank ) R ead with Auto Precharge ( A - Bank ) R ow Active ( D - Bank ) Auto Precharge Start Point W r ite with Auto Precharge (D- Bank) Auto Precharge Start Point (D- Bank) :Don't Care *Note : 1. tCDL should be controlled to meet minimum tRAS before internal precharge start. (In the case of Burst Length = 1 & 2) Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 36/45 ESMT 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 M12L64164A Clock Suspension & DQM Operation Cycle @ CAS Letency = 2 , Burst Length = 4 17 18 19 CLOCK CKE CS RAS CAS ADDR Ra Ca Cb Cc A1 3 A1 2 A10 /AP Ra DQ Qa0 Qa1 Qa2 Qa3 Qb0 Qb1 Dc0 Dc2 tSHZ WE tSHZ *Note1 DQM Row Active Read Clock Su pen s i on Read Read DQM W rite W rite DQM Clock Suspension W rite DQM :Don't Car e *Note : 1. DQM is needed to prevent bus contention Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 37/45 ESMT 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 M12L64164A Read interrupted by Precharge Command & Read Burst Stop Cycle @ Burst Length = Full page 17 18 19 CLOCK HIGH CKE CS RAS CAS ADDR RAa CAa CAb A1 3 A1 2 A10 /AP RAa 1 1 QAb0 QAb1 QAb2 QAb3 QAb4 QAb5 2 CL=2 DQ CL=3 QAa0 QAa1 QAa2 QAa3 QAa4 2 QAb0 QAb1 QAb2 QAb3 QAb4 QAb5 QAa0 QAa1 QAa2 QAa3 QAa4 WE *Note1 DQM Row Active ( A- Ban k ) Read (A- Ban k ) Burst Stop Read (A- Ban k ) Precharge ( A- B an k ) :Don't Car e *Note : 1. About the valid DQs after burst stop, it is same as the case of RAS interrupt. Both cases are illustrated above timing diagram. See the label 1,2 on them. But at burst write, Burst stop and RAS interrupt should be compared carefully. Refer the timing diagram of “Full page write burst stop cycles”. 2. Burst stop is valid at every burst length. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 38/45 ESMT 0 CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 M12L64164A Write interrupted by Precharge Command & Write Burst Stop Cycle @ Burst Length = Full page 17 18 19 CKE HIGH CS RAS CAS ADDR RAa CAa CAb A1 3 A1 2 A10 /AP RAa tBDL *Note1 tRDL DAb0 DAb1 DAb2 DAb3 DAb4 DAb5 DQ DAa0 DAa1 DAa2 DAa3 DAa4 WE DQM Row Active ( A- B an k ) W rite (A- Ban k) Burst Stop W rite (A- Ban k) Precharge ( A- B an k ) :Don't Care *Note : 1. Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is defined by AC parameter of tRDL. DQM at write interrupted by precharge command is needed to prevent invalid write. DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input data after Row precharge cycle will be masked internally. 2. Burst stop is valid at every burst length. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 39/45 ESMT Active/Precharge Power Down Mode @ CAS Latency = 2, Burst Length = 4 0 CLOCK *Note2 M12L64164A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 tSS *Note1 tSS *Note3 tSS CKE CS RAS CAS ADDR Ra Ca A1 3 A1 2 A10 /AP Ra tSHZ DQ Qa0 Qa1 Qa2 WE DQM Pr ech ar ge Power - Down Entr y Row Ac tive Pr ech ar ge Power - D own Exi t Act ive Pow er - dow n Entry Read Precharge Active Power - down Exi t : Don't care *Note: 1. Both banks should be in idle state prior to entering precharge power down mode. 2. CKE should be set high at least 1CLK + tSS prior to Row active command. 3. Can not violate minimum refresh specification. (64ms) Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 40/45 ESMT Self Refresh Entry & Exit Cycle 0 CLOCK *Note2 *Note1 *Note4 M12L64164A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 tRFCmin *Note6 CKE *Note3 tSS CS *Note5 RAS *Note7 CAS ADDR A13,A1 2 A10 /AP DQ Hi- Z Hi-Z WE DQM Self R ef r esh En tr y Se l f R ef r e s h E xi t Auto Ref resh : Don't care *Note : TO ENTER SELF REFRESH MODE 1. CS , RAS & CAS with CKE should be low at the same clock cycle. 2. After 1 clock cycle, all the inputs including the system clock can be don’t care except for CKE. 3. The device remains in self refresh mode as long as CKE stays “Low”. cf.) Once the device enters self refresh mode, minimum tRAS is required before exit from self refresh. TO EXIT SELF REFRESH MODE 4. System clock restart and be stable before returning CKE high. 5. CS starts from high. 6. Minimum tRFC is required after CKE going high to complete self refresh exit. 7. Burst auto refresh is required before self refresh entry and after self refresh exit if the system uses burst refresh. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 41/45 ESMT Mode Register Set Cycle 0 CLOCK 1 2 3 4 5 6 M12L64164A Auto Refresh Cycle 0 1 2 3 4 5 6 7 8 9 10 CKE HIGH HIGH CS *Note2 tRFC RAS *Note1 CAS *Note3 ADDR Key Ra DQ HI-Z HI-Z WE DQM MRS New Com man d Auto Ref res h New C om m an d :Don't Care All banks precharge should be completed before Mode Register Set cycle and auto refresh cycle. MODE REGISTER SET CYCLE *Note : 1. CS , RAS , CAS , & WE activation at the same clock cycle with address key will set internal mode register. 2. Minimum 2 clock cycles should be met before new RAS activation. 3. Please refer to Mode Register Set table. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 42/45 ESMT PACKING DIMENSIONS 54-LEAD TSOP(II) SDRAM (400mil) (1:3) -H- M12L64164A D 54 28 SEE DETAIL A A A2 0.21 REF 0.665 REF B PIN1 IDENTIFIER E1 E A1 -CB O L L1 1 27 DETAIL "A" -C- b -C- e SEATING PLANE b 0.10 c c1 b1 SECTION B-B Symbol A A1 A2 b b1 c c1 D E E1 L L1 e Θ Dimension in mm Min Norm Max 1.20 0.05 0.10 0.15 0.95 1.00 1.05 0.25 0.45 0.25 0.35 0.40 0.12 0.21 0.10 0.127 0.16 22.22 BSC 11.76 BSC 10.16 BSC 0.40 0.50 0.60 0.80 REF 0.80 BSC 0° 10° Dimension in inch Min Norm Max 0.047 0.002 0.004 0.006 0.037 0.039 0.041 0.010 0.018 0.010 0.014 0.016 0.005 0.008 0.004 0.005 0.006 0.875 BSC 0.463 BSC 0.400 BSC 0.016 0.020 0.024 0.031 REF 0.031 BSC 0° 10° Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 43/45 ESMT PACKING 54-BALL DIMENSIONS SDRAM ( 8x8 mm ) M12L64164A Dimension in mm Min Norm Max A 1.00 A1 0.20 0.25 0.30 A2 0.61 0.66 0.71 Φb 0.30 0.35 0.40 D 7.90 8.00 8.10 E 7.90 8.00 8.10 D1 6.40 E1 6.40 e 0.80 Controlling dimension : Millimeter. Symbol Dimension in inch Min Norm Max 0.039 0.008 0.010 0.012 0.024 0.026 0.028 0.012 0.014 0.016 0.311 0.315 0.319 0.311 0.315 0.319 0.252 0.252 0.031 Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 44/45 ESMT Important Notice All rights reserved. M12L64164A No part of this document may be reproduced or duplicated in any form or by any means without the prior permission of ESMT. The contents contained in this document are believed to be accurate at the time of publication. ESMT assumes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice. The information contained herein is presented only as a guide or examples for the application of our products. No responsibility is assumed by ESMT for any infringement of patents, copyrights, or other intellectual property rights of third parties which may result from its use. No license, either express , implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of ESMT or others. Any semiconductor devices may have inherently a certain rate of failure. To minimize risks associated with customer's application, adequate design and operating safeguards against injury, damage, or loss from such failure, should be provided by the customer when making application designs. ESMT's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. If products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications. Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007 Revision: 3.0 45/45