M24L48512DA-70BIG

ESMT PSRAM M24L48512DA 4-Mbit (512K x 8) Pseudo Static RAM Features • • • • • • Advanced low power architecture High speed: 55 ns, 60 ns and 70 ns Wide voltage range: 2.7V to 3.6V Typical active current: 1mA @ f = 1 MHz Low standby power Automatic power-down when deselected Enable ( WE )inputs LOW and Chip Enable Two (CE2) input HIGH. Data on the eight I/O pins (I/O0 through I/O15) is then written into the location specified on the address pins (A0 through A18). Reading from the device is accomplished by asserting the Chip Enable One ( CE1 ) and Output Enable ( OE ) inputs LOW while forcing Write Enable ( WE ) HIGH and Chip Enable Two(CE2) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected CE1 HIGH or CE2 LOW), the outputs are disabled ( OE HIGH), or during write operation ( CE1 LOW, CE2 HIGH, and WE LOW).See the Truth Table for a complete description of read and write modes. Functional Description The M24L48512DA is a high-performance CMOS pseudo static RAM (PSRAM) organized as 512K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable( CE1 ), an active HIGH Chip Enable (CE2), and active LOW Output Enable ( OE ).This device has an automatic power-down feature that reduces power consumption dramatically when deselected. Writing to the device is accomplished by taking Chip Enable One ( CE1 ) and Write Logic Block Diagram Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2008 Revision : 1.1 1/12 ESMT Pin Configuration[1] M24L48512DA Product Portfolio Power Dissipation Product Min. VCC Range(V) Speed (ns) Max. 55 M24L48512DA 2.7 3.0 3.6 60 70 1 5 Operating, ICC (mA) f = 1 MHz Typ.[2] Max. f = fMAX Typ.[2] 14 8 Max. 22 15 Standby, ISB2 (µA) Typ.[2] Max. Typ. 17 40 Notes: 1. NC “no connect”—not connected internally to the die. 2.Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC (typ) and TA = 25°C. Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008 Revision: 1.1 2/12 ESMT Maximum Ratings (Above which the useful life may be impaired. For user guide-lines, not tested.) Storage Temperature .................................–65°C to +150°C Ambient Temperature with Power Applied ..............................................–40°C to +85°C Supply Voltage to Ground Potential ................−0.4V to 4.6V DC Voltage Applied to Outputs in High-Z State[3, 4, 5] .......................................−0.4V to 3.7V DC Input Voltage[3, 4, 5] ....................................−0.4V to 3.7V Output Current into Outputs (LOW) ............................20 mA Static Discharge Voltage ......................................... > 2001V (per MIL-STD-883, Method 3015) M24L48512DA Latch-up Current ....................................................> 200 mA Operating Range Range Extended Industrial Ambient Temperature (TA) −25°C to +85°C −40°C to +85°C VCC 2.7V to 3.6V 2.7V to 3.6V Electrical Characteristics (Over the Operating Range) Parameter VCC VOH VOL VIH VIL IIX IOZ ICC Description Supply Voltage Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Current Output Leakage Current VCC Operating Supply Current Automatic CE1 Power-down Current —CMOS Inputs Automatic CE1 Power-down Current —CMOS Inputs Test Conditions Min. 2.7 VCC – 0.4 0.4 0.8 * VCC -0.4 GND ≤ VIN ≤ Vcc GND ≤ VOUT ≤ Vcc, Output Disabled f = fMAX = 1/tRC f = 1 MHz VCC = 3.6V, IOUT = 0 mA, CMOS level -1 -1 14 for 55ns speed 14 for 60 ns speed 8 for 70 ns speed -55, 60, 70 Typ.[2] 3.0 Max. 3.6 Unit V V V V V µA µA mA IOH = −0.1 mA IOL = 0.1 mA VCC + 0.4 0.4 +1 +1 22 for 55 ns speed 22 for 60 ns speed 15 for 70 ns speed 1 for all speed 5 for all speeds ISB1 CE1 ≥ VCC − 0.2V, CE2 ≤ 0.2V, VIN ≥ VCC − 0.2V, VIN ≤ 0.2V, f = fMAX(Address and Data Only), f=0 CE1 ≥ VCC − 0.2V, CE2 ≤ 0.2V, VIN ≥ VCC − 0.2V or VIN ≤ 0.2V, f = 0, VCC = 3.6V 150 250 µA ISB2 17 40 µA Capacitance[6] Parameter CIN COUT Description Input Capacitance Output Capacitance Test Conditions TA = 25°C, f = 1 MHz VCC = VCC(typ) Max. 8 8 Unit pF pF Notes: 3.VIH(MAX) = VCC + 0.5V for pulse durations less than 20 ns. 4.VIL(MIN) = –0.5V for pulse durations less than 20 ns. 5.Overshoot and undershoot specifications are characterized and are not 100% tested. 6.Tested initially and after design or process changes that may affect these parameters. Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008 Revision: 1.1 3/12 ESMT Thermal Resistance[6] Parameter θJA θJC M24L48512DA Description Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51. VFBGA 55 17 Unit °C/W °C/W Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) AC Test Loads and Waveforms Parameters R1 R2 RTH VTH 3.0V VCC 22000 22000 11000 1.50 Unit Ω Ω Ω V Switching Characteristics (Over the Operating Range)[7] Parameter Read Cycle tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE Description Read Cycle Time Address to Data Valid Data Hold from Address Change CE1 LOW and CE2 HIGH to Data Valid OE LOW to Data Valid OE LOW to Low Z[8, 9] OE HIGH to High Z[8, 9] CE1 LOW and CE2 HIGH to Low Z[8, 9] 2 25 0 55 45 45 0 60 45 45 0 5 25 2 25 5 70 60 55 0 –55 Min. 55[11] 55 5 55 25 5 25 5 25 10 8 60 25 5 25 Max. Min. 60 60 10 70 35 –60 Max. Min. 70 70 –70 Max. Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns CE1 HIGH and CE2 LOW to High Z[8, 9] [11] tSK Address Skew Write Cycle[10] tWC Write Cycle Time tSCE CE1 LOW and CE2 HIGH to Write End tAW tHA Address Set-up to Write End Address Hold from Write End Notes: 7. Test conditions assume signal transition time of 1 V/ns or higher, timing reference levels of VCC(typ)/2, input pulse levels of 0V to VCC(typ), and output loading of the specified IOL/IOH and 30-pF load capacitance. 8. tHZOE, tHZCE, and tHZWE transitions are measured when the outputs enter a high-impedance state. 9. High-Z and Low-Z parameters are characterized and are not 100% tested. 10.The internal write time of the memory is defined by the overlap of WE , CE1 = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates write. 11.To achieve 55-ns performance, the read access should be CE controlled. In this case tACE is the critical parameter and tSK is satisfied when the addresses are stable prior to chip enable going active. For the 70-ns cycle, the addresses must be stable within 10 ns after the start of the read cycle. Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008 Revision: 1.1 4/12 ESMT Switching Characteristics (Over the Operating Range)[7] (continued) Prameter tSA tPWE tSD tHD tHZWE tLZWE Description Address Set-up to Write Start WE Pulse Width Data Set-up to Write End Data Hold from Write End WE LOW to High Z[8, 9] WE HIGH to Low Z[8, 9] M24L48512DA –55 Min. 0 40 25 0 25 5 5 Max. Min. 0 40 25 0 25 5 –60 Max. Min. 0 45 25 0 25 –70 Max. Unit ns ns ns ns ns ns Switching Waveforms Read Cycle 1 (Address Transition Controlled) [11, 12, 13] Read Cycle 2 ( OE Controlled) [11, 13] Notes: 12.Device is continuously selected. OE , CE = VIL. 13. WE is HIGH for Read Cycle. Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008 Revision: 1.1 5/12 ESMT Switching Waveforms (continued) Write Cycle No. 1( WE Controlled) [9, 10, 14, 15, 16] M24L48512DA Switching Waveforms (continued) Write Cycle 2 ( CE1 or CE2 Controlled) [9, 10, 14, 15, 16] Notes: 14.Data I/O is high impedance if OE ≥ VIH. 15.If Chip Enable goes INACTIVE simultaneously with WE =HIGH, the output remains in a high-impedance state. 16.During the DON’T CARE period in the DATA I/O waveform, the I/Os are in output state and input signals should not be applied. Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008 Revision: 1.1 6/12 ESMT Switching Waveforms (continued) Write Cycle 3 ( WE Controlled, OE LOW)[15, 16] M24L48512DA Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008 Revision: 1.1 7/12 ESMT Avoid Timing M24L48512DA ESMT Pseudo SRAM has a timing which is not supported at read operation, If your system has multiple invalid address signal shorter than tRC during over 15μs at read operation shown as in Abnormal Timing, it requires a normal read timing at leat during 15μs shown as in Avoidable timing 1 or toggle CE1 to high (≧tRC) one time at least shown as in Avoidable Timing 2. Abnormal Timing ≧15μs CE1 WE ＜ tRC Address Avoidable Timing 1 ≧15μs CE1 WE ≧ tRC Address Avoidable Timing 2 ≧15μs CE1 ≧ tRC WE ＜ tRC Address Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008 Revision: 1.1 8/12 ESMT Truth Table[17] CE1 H X L L L M24L48512DA CE2 X L H H H OE X X L X H WE X X H L H I/O0–I/O7 High Z High Z Data Out Data in High Z Mode Power-down Power-down Read Write Selected, Outputs Disabled Power Standby (ISB) Standby (ISB) Active (ICC) Active (ICC) Active (ICC) Ordering Information Speed (ns) 55 60 70 55 60 70 Ordering Code M24L48512DA-55BEG M24L48512DA -60BEG M24L48512DA -70BEG M24L48512DA-55BIG M24L48512DA-60BIG M24L48512DA-70BIG Package Type 36-Lead VFBGA (6 x 8 x 1 mm) (pb-free) 36-Lead VFBGA (6 x 8 x 1 mm) (pb-free) 36-Lead VFBGA (6 x 8 x 1 mm) (pb-free) 36-Lead VFBGA (6 x 8 x 1 mm) (pb-free) 36-Lead VFBGA (6 x 8 x 1 mm) (pb-free) 36-Lead VFBGA (6 x 8 x 1 mm) (pb-free) Operating Range Extended Extended Extended Industrial Industrial Industrial Note: 17.H = Logic HIGH, L = Logic LOW, X = Don’t Care. Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008 Revision: 1.1 9/12 ESMT Package Diagram 36-Lead VFBGA (6 x 8 x 1 mm) M24L48512DA Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008 Revision: 1.1 10/12 ESMT Revision History Revision 1.0 1.1 Date 2007.07.19 2008.07.04 Original Description M24L48512DA 1. Move Revision History to the last 2. Modify voltage range 2.7V~3.3V to 2.7V~3.6V 3. Add Industrial grade 4. Add Avoid timing Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008 Revision: 1.1 11/12 ESMT Important Notice All rights reserved. M24L48512DA No part of this document may be reproduced or duplicated in any form or by any means without the prior permission of ESMT. The contents contained in this document are believed to be accurate at the time of publication. ESMT assumes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice. The information contained herein is presented only as a guide or examples for the application of our products. No responsibility is assumed by ESMT for any infringement of patents, copyrights, or other intellectual property rights of third parties which may result from its use. No license, either express , implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of ESMT or others. Any semiconductor devices may have inherently a certain rate of failure. To minimize risks associated with customer's application, adequate design and operating safeguards against injury, damage, or loss from such failure, should be provided by the customer when making application designs. ESMT's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. If products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications. Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008 Revision: 1.1 12/12