2N60

2N60 N2 Amps， 600Volts N-Channel MOSFET ■ Description The ET2N60 N-Ceannel enhancement mode silicon gate designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. power MOSFET is ■ Features RDS(ON) = 5.00 @VGS = 10 V Low gate charge ( typical 9nC) High ruggedness Fast switching capability Avalanche energy specified Improved dv/dt capability ■ Symbol ■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Drain Currenet Continuous Drain Current Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation Tc=25℃ Tc=100℃ (Note 1) Repetitive (Note 1) Single Pulse (Note (Note 3) Tc=25℃ Symbol TO-220 VDSS VGSS ID IDP EAR EAS dv/dt PD 55.5 23.6 Ratings TO-220F 600 ±30 TO-251 TO-252 V V 1.9 1.14 7.6 4.4 120 4.5 44 A A A mJ mJ V/ns W Units 2.0 1.35 8 5.55 130 2.0 ＊ 1.35 8 ＊ ＊ 1 BEIJING ESTEK ELECTRONICS CO.,LTD 2N60 Derate above 25℃ Junction Temperature Storage Temperature ＊ 0.44 TJ TSTG 0.19 +150 -55~+150 0.35 W/℃ ℃ ℃ Drain current limited by maximum junction temperature. ■ Thermal Characteristics Parameter Thermal Resistance Junction-Ambient Symbol TO-220 RthJA RthCS RthJC 0.5 2.32 62.5 -5.5 Ratings TO-220F TO-251 ＊ Units TO-252 50 （110） -2.87 ℃/W Thermal Resistance, Case-to-Sink Typ. Thermal Resistance Junction-Case ■ Electrical Characteristics（TJ=25℃,unless Otherwise specified.） Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Forward BVDSS IDSS VGS=0V,ID=250µA VDS=600V,VGS=0V VDS=480V,TC=125℃ VGS=30V,VDS=0V VGS=-30V,VDS=0V △BVDSS/△TJ ID=250µA 600 ----------0.7 -1 10 100 -100 -V µA µA nA nA V/℃ Symbol Test Conditions Min Typ Max Units IGSS Reverse Breakdown Voltage Temperature Coefficient On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage VGS(TH) RDS(ON) VDS=VGS, ID=250µA VDS=10V, ID=1.0A(TO220,TO220F) ID=0.95A(TO251,TO252) 2.0 -- -4.1 4.0 5.0 V CISS COSS CRSS VDS=25V,VGS=0V, f=1MHZ ---- 200 20 4 ---- pF pF pF tD(ON) tR tD(OFF) tF QG QGS QGD VGS=0V, ISD=2.0A(TO220,TO220F) ISD=0.95A(TO251,TO252) TO-220,TO-220F TO-251, TO-252 VDS=480V, ID=2.0A VGS=10V (Note 4, 5) -VDD=300V,ID=2.0A, RG=25 (Note 4, 5) 10 25 25 30 9 1.5 4.0 -------- ns ns ns ns nC nC nC ------- VSD ------- -----230 1.0 1.4 2.0 1.9 8.0 7.6 --- V Continuous Drain-Source Current ISD A Pulsed Drain-Source Current Reverse Recovery Time Reverse Recovery Charge ISM tRR Q RR TO-220,TO-220F TO-251, TO-252 ISD=2.0A, dISD/dt=100A/µs (Note 4) A ns µC -- 1. Repetitive Rating : Pulse width limited by maxim um junction temperature 2. L = 60 mH, IAS = 2.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 2.0 A, di/dt ≤ 200A/μs, VDD≤BVDSS, Starting TJ = 25°C 2 BEIJING ESTEK ELECTRONICS CO.,LTD 2N60 4. Pulse Test : Pulse width ≤300μs, Duty cycle≤ 2% 5. Essentially independent of operating temperature ■ Typical Characteristics 3 BEIJING ESTEK ELECTRONICS CO.,LTD 2N60 ■ Typical Characteristics (Continued) Figure 9-1. Maximum Safe Operating Area for TO220 Figure 9-2. Maximum Safe Operating Area for TO220F TO220,TO220F TO251,TO252 Figure 9-3. Maximum Safe Operating Area for TO251, TO252 Figure 10. Maximum Drain Current vs Case Temperature 4 BEIJING ESTEK ELECTRONICS CO.,LTD 2N60 ■ Typical Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve TO220 Figure 11-2. Transient Thermal Response Curve for TO220F Figure 11-3. Transient Thermal Response Curve for TO251/ TO252 5 BEIJING ESTEK ELECTRONICS CO.,LTD