7N60

7N60 7 Amps，600Volts N-Channel MOSFET ■ Description The ET7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features RDS(ON) = 1.20 @VGS = 10 V Low gate charge ( typical 29nC) High ruggedness Fast switching capability Avalanche energy specified Improved dv/dt capability ■ Symbol ■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Drain Currenet Continuous Drain Current Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation Junction Temperature Storage Temperature ＊ Symbol VDSS VGSS Tc=25℃ Tc=100℃ (Note 1) ID IDP EAR EAS dv/dt PD TJ TSTG 152 1.21 Ratings TO-220 600 ±30 TO-220F Units V V 7.0 4.3 28 15.2 267 4.5 7.0＊ 4.3 28 ＊ ＊ A A A mJ mJ V/ns Repetitive Single Pulse (Note 1) (Note 2) (Note 3) Tc=25℃ Derate above 25℃ 50 0.40 +150 W W/℃ ℃ ℃ -55~+150 Drain current limited by maximum junction temperature. 1 BEIJING ESTEK ELECTRONICS CO.,LTD 7N60 ■ Thermal Characteristics Parameter Thermal Resistance Junction-Ambient Symbol RthJA RthCS RthJC 0.5 0.82 Ratings TO-220 62.5 -2.5 ℃/W TO-220F Units Thermal Resistance, Case-to-Sink Typ. Thermal Resistance Junction-Case ■ Electrical Characteristics（TJ=25℃,unless Otherwise specified.） Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Forward BVDSS IDSS VGS=0V,ID=250µA VDS=600V,VGS=0V VDS=480V,TC=125℃ VGS=30V,VDS=0V VGS=-30V,VDS=0V △BVDSS/△TJ ID=250µA 600 ----------0.7 -1 10 100 -100 -V µA µA nA nA V/℃ Symbol Test Conditions Min Typ Max Units IGSS Reverse Current Breakdown Voltage Temperature Coefficient On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage Continuous Drain-Source Current Pulsed Drain-Source Current Reverse Recovery Time Reverse Recovery Charge VGS(TH) RDS(ON) VDS=VGS, ID=250µA VDS=10V,ID=3.5A 2.0 -- -0.98 4.0 1.20 V CISS COSS CRSS VDS=25V,VGS=0V, f=1MHZ ---- 1000 110 12.6 ---- pF pF pF tD(ON) tR tD(OFF) tF QG QGS QGD VDS=480V, ID=7.0A VGS=10V (Note 4, 5) -VDD=300V,ID=7.0A, RG=25 (Note 4, 5) 20 50 80 70 29 4.7 12.5 -------- ns ns ns ns nC nC nC ------- VSD ISD ISM tRR QRR VGS=0V,ISD=7.0A ---- ---350 3.3 1.4 7.0 28.0 --- V A A ns µC ISD=7.0A, dISD/dt=100A/µs (Note 4) --- 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L =10 mH, IAS = 7.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 7.0 A, di/dt ≤ 200A/μs, VDD≤BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤300μs, Duty cycle≤ 2% 5. Essentially independent of operating temperature 2 BEIJING ESTEK ELECTRONICS CO.,LTD 7N60 ■ Typical Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3 BEIJING ESTEK ELECTRONICS CO.,LTD 7N60 ■ Typical Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure8. On-Resistance Variation vs Temperature Figure 9-1. Maximum Safe Operating Area for TO220 Figure 9-2. Maximum Safe Operating Area for TO220F Figure 10. Maximum Drain Current vs Case Temperature 4 BEIJING ESTEK ELECTRONICS CO.,LTD 7N60 ■ Typical Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve Figure 11-2. Transient Thermal Response Curve for TO220F 5 BEIJING ESTEK ELECTRONICS CO.,LTD