BLV1N60

BLV1N60 N-channel Enhancement Mode Power MOSFET • • • Avalanche Energy Specified Fast Switching Simple Drive Requirements BVDSS RDS(ON) ID 600V 8Ω 1A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current ( TC=100 oC) Drain Current (pulsed) Power Dissipation Linear Derating Factor Single Pulsed Avalanche Energy (Note 2) Avalanche Current Repetitive Avalanche Energy (Note 1) (Note 1) (Note 1) Value 600 + 20 1 0.63 4 28 0.22 14 1 2.8 -55 to +150 -55 to +150 Units V V A A A W W/℃ mJ A mJ o o Operating Junction Temperature Range Storage Temperature Range C C Thermal Characteristics Symbol Rth j-c Rth j-a Parameter Thermal Resistance, Junction to case Thermal Resistance, Junction to Ambient Max. Max. Value 4.5 110 Units ℃/ W ℃/ W -1Total 6 Pages BLV1N60 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs IDSS Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Drain-Source Leakage Current Drain-Source Leakage Current Tc=125℃ Gate-Source Leakage Current Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS=0V, ID=250uA Reference to 25℃, ID=1mA VDS=VGS, ID=250uA VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= ± 20V VDD=480V ID=1A VGS=10V (note3) VDD=300V ID=1A RG=25Ω note3 (note3) VDS=25V VGS=0V f = 1MHz Min. 600 2 Typ. 0.6 1 5.9 1.4 2.4 170 28 4 Max. 8 4 1 100 ±100 30 60 45 75 Units V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Static Drain-Source On-Resistance VGS=10V, ID=0.5A Forward Transconductance (note3) VDS=15V, ID=0.5A IGSS Qg Qgs Qgd t (on) tr t (off) tf Ciss Coss Crss Source-Drain Diode Characteristics Symbol IS ISM VSD trr Qr r Parameter Test Conditions Min. Typ. 190 0.53 Max. 1 4 1.4 Units A A V ns uC Continuous Source Diode Forward Current Pulsed Source Diode Forward Current (note1) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge VGS=0V, IS=1A VGS=0V, IS=1A(note3) dIF/dt =100A/us Note： (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) L=25mH, Ias=1A，Vdd=50V，Rg=25Ω，staring Tj=25C (3) Pulse width ≤ 300 us; duty cycle ≤ 2% -2Total 6 Pages BLV1N60 N-channel Enhancement Mode Power MOSFET Typical Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Transfer Characteristics Fig 3. Normalized BVdss vs. Junction Temperature Fig 4. Normalized On-Resistance vs. Junction Temperature -3Total 6 Pages BLV1N60 N-channel Enhancement Mode Power MOSFET Typical Characteristics （continued） Fig 5. On-Resistance Variation vs. Drain Current and Gate Voltage Fig 6. Body Diode Forward Voltage Variation vs. Source Current and Temperature Fig 7. Gate Charge Characteristics Fig 8. Capacitance Characteristics -4Total 6 Pages BLV1N60 N-channel Enhancement Mode Power MOSFET Typical Characteristics （continued） Fig 9. Maximum Safe Operating Area Fig 10. Transient Thermal Response Curve -5Total 6 Pages BLV1N60 N-channel Enhancement Mode Power MOSFET Test Circuit and Waveform Fig 11. Gate Charge Circuit Fig 12. Gate Charge Waveform Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Unclamped Inductive Switching Test Circuit -6Total 6 Pages Fig 16. Unclamped Inductive Switching Waveforms