BLV4N60

BLV4N60 N-channel Enhancement Mode Power MOSFET • • • Avalanche Energy Specified Fast Switching Simple Drive Requirements BVDSS RDS(ON) ID 600V 2.2Ω 4A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current ( TC=100 oC) Drain Current (pulsed) (Note 1) Power Dissipation Linear Derating Factor Single Pulsed Avalanche Energy (Note2) Avalanche Current Repetitive Avalanche Energy Operating Junction Temperature Range Storage Temperature Range Value 600 + 20 4 2.53 16 104 0.83 218 4 10.4 -55 to +150 -55 to +150 Units V V A A A W W/℃ mJ A mJ o o C C Thermal Characteristics Symbol Rth j-c Rth j-a Parameter Thermal Resistance, Junction to case Thermal Resistance, Junction to Ambient Max. Max. Value 1.2 62.5 Units ℃/ W ℃/ W Page 1/6 BLV4N60 N-channel Enhancement Mode Power MOSFET Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS ∆BVDSS /∆TJ RDS(ON) VGS(th) g fs IDSS Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance(note3) Drain-Source Leakage Current Drain-Source Leakage Current Tc=125℃ Gate-Source Leakage Current Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS=0V, ID=250uA Reference to 25℃, ID=1mA VGS=10V, ID=2A VDS=VGS, ID=250uA VDS=15V, ID=2A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= ± 20V VDD=480V ID=4A VGS=10V note3 VDD=300V ID=4A RG=25Ω note3 VDS=25V VGS=0V f = 1MHz Min. 600 2 Typ. 0.6 3 23.7 5.4 9.4 13 21 35 25 690 125 14 Max. 2.2 4 1 100 ±100 Units V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF IGSS Qg Qgs Qgd t (on) tr t (off) tf Ciss Coss Crss Source-Drain Diode Characteristics Symbol IS ISM VSD trr Qr r Note： (1) Repetitive Rating: Pulse width limited by maximum junction temperature Parameter Test Conditions Min. - Typ. 680 2 Max. 4 16 1.4 - Units A A V ns uC Continuous Source Diode Forward Current Pulsed Source Diode Forward Current (note1) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge VGS=0V, IS=4A VGS=0V, IS=4A dIF/dt = 100A/us (2) L=25mH, Ias=4A，Vdd=50V，Rg=25Ω，staring Tj=25C (3) Pulse width ≤ 300 us; duty cycle ≤ 2% Page 2/6 BLV4N60 N-channel Enhancement Mode Power MOSFET Typical Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVdss vs. Junction Temperature Fig 4. Normalized On-Resistance vs. Junction Temperature Page 3/6 BLV4N60 N-channel Enhancement Mode Power MOSFET Typical Characteristics （continued） Fig 5. On-Resistance Variation vs. Drain Current and Gate Voltage Fig 6. Body Diode Forward Voltage Variation vs. Source Current and Temperature Fig 7. Gate Charge Characteristics Fig 8. Capacitance Characteristics Page 4/6 BLV4N60 N-channel Enhancement Mode Power MOSFET Typical Characteristics （continued） Fig 9. Maximum Safe Operating Area Fig 10. Transient Thermal Response Curve Page 5/6 BLV4N60 N-channel Enhancement Mode Power MOSFET Test Circuit and Waveform Fig 11. Gate Charge Circuit Fig 12. Gate Charge Waveform Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Unclamped Inductive Switching Test Circuit Fig 16. Unclamped Inductive Switching Waveforms Page 6/6