ET50N06

ET50N06 50 Amps，60Volts N-CHANNEL MOSFET ■ DESCRIPTION The ET50N06 is a N-Channel enhancement MOSFET and is designed to have better characteristics, such as superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive DC/DC converters, and high efficiency switching for power management in portable and battery operated products. ■ ● ● ● ● ● ● FEATURES RDS(ON)=0.023Ω@VGS=10V Low gate charge(typical 31nC) Low reverse transfer capacitance(CRSS=typical 80pF) Fast switching capability Avalanche energy specified Improved dv/dt capability,high ruggedness ■ SYMBOL ■ ABSOLUTE MAXIMUM RATINGS(Tc=25℃,unless PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS otherwise specified) UNIT V V 60 PATINGS ±20 1 BEIJING ESTEK ELECTRONICS CO.,LTD ET50N06 Drain Currenet Continuous Drain Current Pulsed(Note 1) Avalanche Energy Repetitive(Note 1) Single Pulse(Note 2) Peak Diode Recovery dv/dt(Note 3) Total Power Dissipation Operation Junction Temperature Storage temperature Tc=25℃ Derate above 25℃ Tc=25℃ Tc=100℃ ID IDP EAR EAS dv/dt PD TJ TSTG 50 35 200 13 480 7.0 120 0.8 -55 to+150 -55~+150 A A A mJ mJ v/ns W w/℃ ℃ ℃ ■ THERMAL DATA PARAMETER Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Thermal Resistance Case-Sink SYMBOL θJA θJC θCS TYP 0.5 MAX 62.5 1.24 UNIT ℃/W ℃/W ℃/W ■ ELECTRICAL CHARACTERISTICS（TJ=25℃,unless Otherwise specified.） PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Breakdown Voltage Temperature On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS=25V,VGS=0V,f=1MHZ 900 430 80 1220 550 100 pF pF pF VGS(TH) RDS(ON) VDS=VGS, ID=250μA VDS=10V,ID=25A 2.2 0.019 3.8 0.023 V Ω Forward Reverse △BVDSS/△TJ BVDSS IDSS VGS=0V,ID=250μA VDS=60V,VGS=0V VDS=48V,TC=150℃ VGS=20V,VDS=0V VGS=-20V,VDS=0V ID=250μA 0.06 60 1 10 100 -100 V μA μA nA nA V/℃ IGSS ■ ELECTRICAL CHARACTERISTICS(Cont.) SYMBOL TEST CONDITIONS MIN TYP MAX UNIT PARAMETER Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage Continuous Drain-Source Current Pulsed Drain-Source Current Reverse Recovery Time tD(ON) tR tD(OFF) tF QG QGS QGD 40 VDD=30V,ID=25A,RG=50Ω (Note4,5) 100 90 80 30 VDS=48V,VGS=10V,ID=50A(Note4,5) 9.6 10 60 200 180 160 40 - ns ns ns ns nC nC nC VSD ISD ISM VGS=0V,ISD=50A 1.5 50 200 54 V A A ns tRR 2 BEIJING ESTEK ELECTRONICS CO.,LTD ET50N06 Reverse Recovery Charge QRR 81 nC Note:1.Repetitive Rating: Pulse width limited by maximum junction temperature 2.L=5.6mH,IAS=50A,VDD=25V,RG=0Ω,Starting TJ=25℃ 3.ISD≤50A,di/dt≤300A/μs,VDD≤BVDSS, Starting TJ=25℃ 4.Pulse Test: Pulse Width≤300μs,Duty Cycle≤2% 5. Essentially Independent of Operating Temperature ■ TYPICAL CHARACTERISTICS 3 BEIJING ESTEK ELECTRONICS CO.,LTD ET50N06 4 BEIJING ESTEK ELECTRONICS CO.,LTD