ET830

ET830 5 Amps，500Volts N-Channel MOSFET ■ Description The ET830 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features RDS(ON) = 1.5 @VGS = 10 V Low gate charge ( typical 20nC) Fast switching capability Avalanche energy specified Improved dv/dt capability ■ Symbol ■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Drain Currenet Continuous Drain Current Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation Junction Temperature Storage Temperature ＊ Symbol VDSS VGSS Tc=25℃ Tc=100℃ (Note 1) ID IDP EAR EAS dv/dt PD TJ TSTG 76 0.6 5.0 3.0 20 Ratings TO-220 500 ±30 5.0 3.0 20 7.6 305 4.5 40 0.32 +150 -55~+150 ＊ Units V V A A A mJ mJ V/ns W W/℃ ℃ ℃ TO-220F ＊ ＊ Repetitive Single Pulse (Note 1) (Note 2) (Note 3) Tc=25℃ Derate above 25℃ Drain current limited by maximum junction temperature. 1 BEIJING ESTEK ELECTRONICS CO.,LTD ET830 ■ Thermal Characteristics Parameter Thermal Resistance Junction-Ambient Symbol RthJA RthCS RthJC 0.5 1.2 Ratings TO-220 62.5 -3.65 ℃/W TO-220F Units Thermal Resistance, Case-to-Sink Typ. Thermal Resistance Junction-Case ■ Electrical Characteristics（TJ=25℃,unless Otherwise specified.） Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Forward BVDSS IDSS VGS=0V,ID=250µA VDS=500V,VGS=0V VDS=400V,TC=125℃ VGS=30V,VDS=0V VGS=-30V,VDS=0V △BVDSS/△TJ ID=250µA 500 ----------0.6 -1 10 100 -100 -V µA µA nA nA V/℃ Symbol Test Conditions Min Typ Max Units IGSS Reverse Current Breakdown Voltage Temperature Coefficient On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage Continuous Drain-Source Current Pulsed Drain-Source Current Reverse Recovery Time Reverse Recovery Charge VGS(TH) RDS(ON) VDS=VGS, ID=250µA VDS=10V,ID=2.5A 2.0 -- -1.10 4.0 1.5 V CISS COSS CRSS VDS=25V,VGS=0V, f=1MHZ ---- 520 80 15 ---- pF pF pF tD(ON) tR tD(OFF) tF QG QGS QGD VDS=400V, ID=5.0A, VGS=10V (Note 4, 5) -VDD=250V,ID=5.0A, RG=25 (Note 4, 5) 10 50 50 50 20 2.5 10 -------- ns ns ns ns nC nC nC ------- VSD ISD ISM tRR QRR VGS=0V,ISD=5.0A ---- ---260 2.0 1.4 5.0 20.0 --- V A A ns µC ISD=5.0A, dISD/dt=100A/µs (Note 4) --- 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 22 mH, IAS = 5.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 5.0 A, di/dt ≤ 200A/μs, VDD≤BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤300μs, Duty cycle≤ 2% 5. Essentially independent of operating temperature 2 BEIJING ESTEK ELECTRONICS CO.,LTD ET830 ■ Typical Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3 BEIJING ESTEK ELECTRONICS CO.,LTD ET830 ■ Typical Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Figure 9-1. Maximum Safe Operating Area for TO220 Figure 9-2. Maximum Safe Operating Area for TO220F Figure 10. Maximum Drain Current vs Case Temperature 4 BEIJING ESTEK ELECTRONICS CO.,LTD ET830 ■ Typical Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for TO220 Figure 11-2. Transient Thermal Response Curve for TO220F 5 BEIJING ESTEK ELECTRONICS CO.,LTD