11ES1

ｓ DIODE FEATURES Type : 11ES1 11ES1 OUTLINE DRAWING * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Symbol VRRM VRSM IO IF(RMS) IFSM Tjw Tstg 45 0.98 1.0 Approx Net Weight:0.17g 11ES1 100 250 Ta=25°C *1 50Hz Half Sine Wave Resistive Load Ta=50°C *2 1.57 50Hz Half Sine Wave,1cycle, Non-repetitive - 40 to + 150 - 40 to + 150 Unit V V A A A °C °C Electrical • Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Conditions Tj= 25°C, VRM= VRRM Tj= 25°C, IFM= 1.0A *1 *2 Min. Typ. Max. 50 1.0 140 110 Unit µA V °C/W Rth(j-a) Junction to Ambient *1:Without Fin or P.C. Board *2:P.C. Board Mounted (L=3mm,Print Land=5x5mm,Both Sides) ｓ 11ES1 OUTLINE DRAWING (Dmensions in mm)