1617AB15

1617AB15 15 Watts PEP, 26 Volts, Class AB Linear 1600 - 1700 MHz GENERAL DESCRIPTION The 1617AB15 is a COMMON EMITTER transistor capable of providing 15 Watts PEP of Class AB, RF output power over the band 1600 - 1700 MHz. This transistor is specifically designed for SATCOM BASE STATION amplifier applications. It includes Input prematching and utilizes Gold metalization and HIGH VALUE EMITTER ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55CW COMMON EMITTER ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage LVceo Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 58 Watts 60 Volts 27 Volts 3.5 Volts 6.0 Amps - 65 to + 150 oC + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL P-1dB Pg IMD3 VSWR CHARACTERISTICS Power Out 1 dB comp pt. Power Gain Intermod. distortion -3rd Load Mismatch Tolerance TEST CONDITIONS F =1700 MHz Icq = 100 mAmpsVcc= 26V 15 W PEP, Two Tone MIN 15 10.0 TYP 12 MAX UNITS Watt dB dBc -32 6:1 BVces LVceo BVebo Ices hFE Cob θjc Collector to Emitter Breakdown Collector to EmitterBreakdown Emitter to Base Breakdown Collector Leakage Current DC - Current Gain Output Capacitance Thermal Resistance Ic = 50 mA Ic = 50 mA Ie = 10 mA Vce = 26 Volts 60 27 3.5 20 20 3.0 10 100 Volts Volts Volts mA o Vce = 5 V, Ic =0.5 A F =1 MHz, Vcb = 28 V Tc = 25 C o pF C/W Issue February 1996 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120