22NAB12

SKiiP 22 NAB 12 - SKiiP 22 NAB 12 I Absolute Maximum Ratings Symbol Conditions 1) Values 1200 ± 20 23 / 15 46 / 30 24 / 17 48 / 34 1500 25 700 2400 – 40 . . . + 150 – 40 . . . + 125 2500 Units V V A A A A V A A A2s °C °C V Inverter & Chopper VCES VGES IC Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C ICM Theatsink = 25 / 80 °C IF = –IC IFM = –ICM tp < 1 ms; Theatsink = 25 / 80 °C Bridge Rectifier VRRM Theatsink = 80 °C ID IFSM tp = 10 ms; sin. 180 °, Tj = 25 °C tp = 10 ms; sin. 180 °, Tj = 25 °C I2t Tj Tstg Visol AC, 1 min. MiniSKiiP 2 SEMIKRON integrated intelligent Power SKiiP 22 NAB 12 SKiiP 22 NAB 12 I 3) 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter Case M2 Characteristics Symbol Conditions 1) IGBT - Inverter & Chopper IC = 15 A Tj = 25 (125) °C VCEsat VCC = 600 V; VGE = ± 15 V td(on) tr IC = 15 A; Tj = 125 °C td(off) Rgon = Rgoff = 82 Ω tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz Rthjh per IGBT Diode 2) - Inverter & Chopper VF = VEC IF = 15 A Tj = 25 (125) °C VTO Tj = 125 °C rT Tj = 125 °C IF = 15 A, VR = – 600 V IRRM diF/dt = – 400 A/µs Qrr Eoff VGE = 0 V, Tj = 125 °C per diode Rthjh Diode - Rectifier VF IF = 35 A, Tj = 25 °C Rthjh per diode Temperature Sensor T = 25 / 100 °C RTS Shunts (SKiiP 22 NAB 12 I) Rcs(dc) 5 % 4) Rcs(ac) 1% Mechanical Data case to heatsink, SI Units M1 mechanical outline see page Case B 16 – 8 2 min. – – – – – – – – – – – – – – – – – typ. max. Units 2,5(3,1) 3,0(3,7) V 55 110 ns 45 90 ns 400 600 ns 70 100 ns 4,0 – mJ 1,0 – nF – 1,4 K/W V 2,0(1,8) 2,5(2,3) V 1,2 1,0 mΩ 73 53 – A 16 – µC 2,7 – mJ 0,6 1,7 K/W – 1,2 – 1000 / 1670 16,5 10 – M2 2,5 – 1,6 V K/W Ω mΩ mΩ Nm UL recognized file no. E63532 • • specification of shunts and temperature sensor see part A common characteristics see page B 16 – 4 Theatsink = 25 °C, unless otherwise specified CAL = Controlled Axial Lifetime Technology (soft and fast recovery) With integrated DC and/or AC shunts accuracy of pure shunt, please note that for DC shunt no separate sensing contact is used. 1) 2) 3) 4) © by SEMIKRON 000131 B 16 – 53 Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C 22NA1203.xls 22NA1204.xls 5 mWs Eon 4 Tj = 125 °C VCE = 600 V VGE = ± 15 V RG = 5 2 Ω 5 mWs 4 Tj = 125 °C VCE = 600 V VGE = ± 15 V IC = 1 5 A Eon 3 Eoff 3 2 2 Eoff 1 E 0 0 IC 10 20 A 30 1 E 0 0 RG 50 100 Ω 150 Fig. 3 Turn-on /-off energy = f (IC) ICpuls = 15 A Fig. 4 Turn-on /-off energy = f (RG) VGE = 0 V f = 1 MHz Fig. 5 Typ. gate charge characteristic B 16 – 54 Fig. 6 Typ. capacitances vs. VCE 000131 © by SEMIKRON MiniSKiiP 1200 V ICop / IC 1.2 Mini1207 Tj = 150 °C VGE = ≥ 15 V 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 Th [°C] Fig. 7 Rated current of the IGBT ICop / IC = f (Th) ICpuls/IC 2,5 Mini1209 Tj = ≤ 150 °C VGE = ± 15 V ICsc/ICN 12 Mini1210 2 10 Tj = ≤ 150 °C VGE = ± 15 V tsc = ≤ 10 µs Lext < 25 nH 8 1,5 6 1 4 Note: *Allowed numbers of short ci cuit:1s 0,5 2 0 0 500 1000 1500 VCE [V] 0 0 500 1000 1500 VCE [V] Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT Fig. 10 Safe operating area at short circuit of the IGBT Fig. 11 Typ. freewheeling diode forward characteristic B 16 – 4 Fig. 12 Forward characteristic of the input bridge diode 0698 © by SEMIKRON MiniSKiiP 2 +rect +B +DC I+ SKiiP 20 NAB 06 ... SKiiP 21 NAB 06 ... SKiiP 20 NAB 12 ... SKiiP 22 NAB 12 ... Circuit Case M2 Layout and connections for the customer’s printed circuit board Note: The shunts are available only by option I g1 L1 L2 L3 B gB +T -T g2 g3 g5 U V W g4 Isu 0u g6 Isv 0v Isw 0w Hauptanschluß power connector control pin Steueranschluß -rect -B -DC -DC/A