2N2646

2N2646 2N2647 SILICON UNIJONCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as well as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches. The 2N2646 is intended for general purpose industrial applications where circuit economy is of primary importance, and is ideal for use in firing circuits for Silicon Controlled Rectifiers and other applications where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where a low emitter leakage current and a low peak point emitter current (trigger current) are required and also for triggering high power SCR’s. CASE MAXIMUM RATINGS (*) TJ=125°C unless otherwise noted Symbol VB1E VB2E IFRMS IEM PTOT TJ TSTG Ratings Base 1 – Emitter Voltage Base 2 – Emitter Voltage RMS Emitter Current Emitter Peak Current Total Power Dissipation Maximum Junction Storage Temperature Range 2N2646 30 30 50 2 300 2N2647 V V mA A mW 150 -55 to +175 °C ELECTRICAL CHARACTERISTICS TJ=25°C unless otherwise noted, RGK=1000Ω Symbol IEO V(BR)B1E Ratings Emitter Reverse Current Base 1 – Emitter Breakdown Voltage IE =100 µA 2N2646 – 2N2647 Min Max 12 µA V 1/2 30 COMSET SEMICONDUCTORS 2N2646 2N2647 2N2646 – 2N2647 Symbol RBBO Ratings Interbase Resistance VB1B2 = 3 V Intrinsic stand-off ratio VB1B2 = 10 V Emitter Saturation Voltage IE = 50 mA, VB1B2 = 10 V Valley Current VB1B2 = 20 V Peak Current VB1B2 = 25 V 2N2646 2N2647 2N2646 2N2647 2N2646 2N2647 Min 4.7 0.56 0.68 4 8 - Max 9.1 0.75 0.82 2.5 5 2 V mA kΩ η VE(SAT) IV IP µA * VDRM or VRSM can be applied for all types on a continuous dc basis without incurring damage. Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 2/2