2SA1020

Transys Electronics LIMITED TO-92MOD Plastic-Encapsulated Transistors 2SA1020 FEATURES Power dissipation PCM : 900 mW (Tamb=25℃) TRANSISTOR (PNP) TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -50 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE(sat) 123 unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-100µA, IE=0 Ic=-1mA, IB=0 IE=-100 µA, IC=0 VCB=-50 V, IE=0 VEB=-5 V, IC=0 VCE=-2 V, IC=-500 A IC=-1A, IB=-50 mA IC=-1 A, IB=-50 mA VCE=-2 V, IC=-500 mA -50 -50 -5 -1 -1 70 240 -0.5 -1.2 100 µA µA V V MHz fT CLASSIFICATION OF hFE(1) Rank Range O 70-140 Y 120-240