5STP33L2800

VDSM ITAVM ITRMS ITSM VT0 rT • • • • • = = = = = = 2800 V 3740 A 5880 A 60000 A 0.95 V 0.100 mΩ Phase Control Thyristor 5STP 33L2800 Doc. No. 5SYA1011-03 Sep. 01 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Blocking Part Number VDRM VRSM1 IDRM IRRM dV/dtcrit VRRM 5STP 33L2800 5STP 33L2600 5STP 33L2200 Conditions 2800 V 3000 V 2600 V 2800 V ≤ 400 mA ≤ 400 mA 1000 V/µs 2200 V 2400 V f = 50 Hz, tp = 10ms tp = 5ms, single pulse VDRM VRRM Tj = 125°C Exp. to 0.67 x VDRM, Tj = 125°C Mechanical data FM Mounting force nom. min. max. a Acceleration Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 100 m/s2 1.45 kg 36 mm 15 mm 70 kN 63 kN 84 kN ABB Semiconductors AG reserves the right to change specifications without notice. 5STP 33L2800 On-state ITAVM ITRMS ITSM It 2 Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral 3740 A 5880 A 60000 A 65000 A 2 2 Half sine wave, TC = 70°C tp = tp = 10 ms 8.3 ms 10 ms 8.3 ms 3000 A Tj = 125°C Tj = 125°C After surge: VD = VR = 0V 18000 kA s tp = 17500 kA s tp = VT VT0 rT IH IL On-state voltage Threshold voltage Slope resistance Holding current 1.23 V 0.95 V 0.100 mΩ 30-100 mA 15-60 mA IT = IT = 2000 - 6000 A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Latching current 100- mA 500 100- mA 300 250 A/µs 500 A/µs Switching di/dtcrit Critical rate of rise of on-state current Cont. f = 50 Hz VD ≤ 0.67⋅VDRM , Tj = 125°C 60 sec. f = 50Hz VD = 0.4⋅VDRM ITRM = 4500 A IFG = 2 A, tr = 0.5 µs IFG = 2 A, tr = 0.5 µs td tq Qrr Delay time Turn-off time ≤ ≤ min max 3.0 µs 400 µs VD ≤ 0.67⋅VDRM ITRM = 4500 A, Tj = 125°C dvD/dt = 20V/µs VR > 200 V, diT/dt = -5 A/µs Recovery charge 2000 µAs 4000 µAs Triggering VGT IGT VGD IGD VFGM IFGM VRGM PG Gate trigger voltage Gate trigger current Gate non-trigger voltage Gate non-trigger current Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Gate power loss 2.6 V 400 mA 0.3 V 10 mA 12 V 10 A 10 V 3W Tj = 25° Tj = 25° VD =0.4 x VDRM VD = 0.4 x VDRM ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1011-03 Sep. 01 page 2 of 6 5STP 33L2800 Thermal Tjmax Tstg RthJC Max. operating junction temperature range Storage temperature range Thermal resistance junction to case 125 °C -40…140 °C 14 K/kW 14 K/kW 7 K/kW RthCH Thermal resistance case to heat sink Analytical function for transient thermal impedance: Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled 3 K/kW 1.5 K/kW ZthJC [K/kW] 8 7 ZthJC(t) = å Ri(1 - e i =1 i Ri(K/kW) τi(s) 1 4.7 0.4787 2 0.853 0.0824 3 1.07 0.0104 n 6 180° sine: add 0.8 K/kW 180° rectangular: add 0.8 K/kW 120° rectangular: add 1 K/kW 60° rectangular: add 2 K/kW - t/τ i ) 4 5 4 3 2 1 0 0.001 0.010 0.100 Fm = 63..84 kN Double-side cooling TL1 0.49 0.0041 1.000 10.000 t [s] Fig. 1 Transient thermal impedance junction to case. On-state characteristic model: VT = A + B ⋅ iT + C ⋅ ln(iT +1) + D ⋅ IT Valid for iT = 400 – 11000 A A 0.731174 B 0.000079 C 0.017903 D 0.002314 Fig. 2 On-state characteristics. Tj=125°C, 10ms half sine Fig. 3 On-state characteristics. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1011-03 Sep. 01 page 3 of 6 5STP 33L2800 Fig. 4 On-state power dissipation vs. mean onstate current. Turn - on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. Fig. 6 Surge on-state current vs. pulse length. Half-sine wave. Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1011-03 Sep. 01 page 4 of 6 5STP 33L2800 Fig. 8 Gate trigger characteristics. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of onstate current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. Turn - off time, typical parameter relationship. Fig. 12 tq/tq1 = f1(Tj) Fig. 13 tq/tq1 = f2(-diT/dt) Fig. 14 tq/tq1 = f3(dv/dt) tq = tq1 • f1(Tj) • f2(-diT/dt) • f3(dv/dt) tq1 :at normalized values (see page 2) tq : at varying conditions ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1011-03 Sep. 01 page 5 of 6 5STP 33L2800 Turn-on and Turn-off losses Fig. 15 Won = f(IT, tP), Tj = 125°C. Half sinusoidal waves. Fig. 16 Won = f(IT, di/dt), Tj = 125°C. Rectangular waves. Fig. 17 Woff = f(V0,IT), Tj = 125°C. Half sinusoidal waves. tP = 10 ms. Fig. 18 Woff = f(V0,di/dt), Tj = 125°C. Rectangular waves. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 abbsem@ch.abb.com www.abbsem.com Doc. No. 5SYA1011-03 Sep. 01