65C256

IS65C256 32K x 8 LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 20 ns • Low active power: 200 mW (typical) • Low standby power: 250 µW (typical) CMOS standby • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V power supply • Temperature Offerings: Option A1: –40oC to +85oC Option A2: –40oC to +105oC Option A3: –40oC to +125oC ISSI MARCH 2004 ® DESCRIPTION The ISSI IS65C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSI's highperformance, low power CMOS technology. When CS is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CMOS input levels. Easy memory expansion is provided by using an active LOW Chip Select (CS) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS65C256 is Packaged in the JEDEC Standard 28-Pin SOP and 28-Pin TSOP (Type I). FUNCTIONAL BLOCK DIAGRAM A0-A14 DECODER 32K X 8 MEMORY ARRAY VDD GND I/O DATA CIRCUIT I/O0-I/O7 COLUMN I/O CS OE WE CONTROL CIRCUIT Copyright © 2004 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 03/24/04 1 IS65C256 PIN CONFIGURATION 32-Pin SOP ISSI PIN CONFIGURATION 32-Pin TSOP (Type 1) 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VDD WE A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3 ® A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 OE A11 A9 A8 A13 WE VDD A14 A12 A7 A6 A5 A4 A3 22 23 24 25 26 27 28 1 2 3 4 5 6 7 21 20 19 18 17 16 15 14 13 12 11 10 9 8 A10 CS I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 PIN DESCRIPTIONS A0-A14 CS OE WE I/O0-I/O7 VDD GND Address Inputs Chip Select Input Output Enable Input Write Enable Input Input/Output Power Ground TRUTH TABLE Mode Not Selected (Power-down) Output Disabled Read Write WE X H H L CS H L L L OE I/O Operation X H L X High-Z High-Z DOUT DIN VDD Current ISB1, ISB2 ICC1, ICC2 ICC1, ICC2 ICC1, ICC2 ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM TBIAS TSTG PT IOUT Parameter Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Power Dissipation DC Output Current (LOW) Value –0.5 to +7.0 –55 to +125 –65 to +150 Unit V °C °C W mA 0.5 20 Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 03/24/04 IS65C256 OPERATING RANGE Range A1 A2 A3 Ambient Temperature –40°C to +85°C –40°C to +105°C –40°C to +125°C VDD 5V ± 10% 5V ± 10% 5V ± 10% ISSI ® DC ELECTRICAL CHARACTERISTICS Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage Test Conditions VDD = Min., IOH = –1.0 mA VDD = Min., IOL = 2.1 mA Min. 2.4 — 2.2 –0.3 –10 –10 Max. — 0.4 VDD + 0.5 0.8 10 10 Unit V V V V µA µA GND ≤ VIN ≤ VDD GND ≤ VOUT ≤ VDD, Outputs Disabled Note: 1. VIL = –3.0V for pulse width less than 10 ns. POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol ICC1 Parameter VDD Operating Supply Current VDD Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) Test Conditions VDD = Max., CS = VIL IOUT = 0 mA, f = 0 VDD = Max., CS = VIL IOUT = 0 mA, f = fMAX VDD = Max., VIN = VIH or VIL CS = VIH, f = 0 VDD = Max., CS ≥ VDD – 0.2V, VIN ≥ VDD – 0.2V, or VIN ≤ 0.2V, f = 0 Min. — — — — — — — — — — — — -20 ns typ(2) Max. 40 50 60 25 95 25 105 25 115 5 10 10 0.5 1.0 1.5 Unit mA ICC2 ISB1 ISB2 A1 A2 A3 A1 A2 A3 A1 A2 A3 A1 A2 A3 mA mA mA Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical values are measured at VDD = 5V, TA = 25oC, tAA = 70 ns, and not 100% tested. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 03/24/04 3 IS65C256 CAPACITANCE(1,2) Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 8 10 Unit pF pF ISSI ® Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V. DATA RETENTION CHARACTERISTICS Symbol VDR IDR1 IDR2 IDR3 Parameter VDD for retention of data Data retention current Data retention current Data retention current Test Conditions VDR = 3.0V VDR = 3.0V VDR = 3.0V Options A1 A2 A3 Min. 2.0 — — — typ (1) 50 50 50 Max. — 150 300 500 Units V µA µA µA Note: 2. Typical values are measured at VDD = 3V, TA = 25oC, and not 100% tested. READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) -20 ns Symbol Parameter Read Cycle Time Address Access Time Output Hold Time CS Access Time OE Access Time (2) (2) Min. 20 — 3 — — 0 0 3 0 0 — Max. — 20 — 20 8 — 9 — 9 — 18 Unit ns ns ns ns ns ns ns ns ns ns ns tRC tAA tOHA tACS tDOE tLZOE tHZOE OE to Low-Z Output OE to High-Z Output CS to Low-Z Output CS to High-Z Output CS to Power-Up CS to Power-Down tLZCS(2) tHZCS(2) tPU tPD (3) (3) Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. Not 100% tested. 4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 03/24/04 IS65C256 AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Levels Output Load Unit 0V to 3.0V 3 ns 1.5V See Figures 1 and 2 ISSI ® AC TEST LOADS 480 Ω 5V 5V 480 Ω OUTPUT 100 pF Including jig and scope Figure 1. OUTPUT 255 Ω 5 pF Including jig and scope 255 Ω Figure 2. AC WAVEFORMS READ CYCLE NO. 1(1,2) t RC ADDRESS t AA t OHA DOUT PREVIOUS DATA VALID t OHA DATA VALID READ1.eps Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 03/24/04 5 IS65C256 READ CYCLE NO. 2(1,3) ISSI t RC ® ADDRESS t AA OE t OHA t DOE CS t HZOE t LZOE t ACS t LZCS t HZCS DATA VALID CS_RD2.eps DOUT HIGH-Z Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CS = VIL. 3. Address is valid prior to or coincident with CS LOW transitions. WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range) Symbol Parameter Write Cycle Time CS to Write End Address Setup Time to Write End Address Hold from Write End Address Setup Time (4) -20 ns Min. Max. 20 13 15 1 0 13 10 0 — — — — — — — — Unit ns ns ns ns ns ns ns ns tWC tSCS tAW tHA tSA tPWE tSD tHD WE Pulse Width Data Setup to Write End Data Hold from Write End Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CS LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write. 4. Tested with OE HIGH. 6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 03/24/04 IS65C256 AC WAVEFORMS WRITE CYCLE NO. 1 (CS Controlled, OE is HIGH or LOW) (1 ) t WC ADDRESS VALID ADDRESS ISSI ® t SA CS t SCS t HA WE t AW t PWE1 t PWE2 t HZWE t LZWE HIGH-Z DOUT DATA UNDEFINED t SD DIN t HD DATAIN VALID CS_WR1.eps WRITE CYCLE NO. 2 (OE is HIGH During Write Cycle) (1,2) t WC ADDRESS VALID ADDRESS t HA OE CS LOW t AW t PWE1 WE t SA DOUT DATA UNDEFINED t HZWE HIGH-Z t LZWE t SD DIN t HD DATAIN VALID CS_WR2.eps Notes: 1. The internal write time is defined by the overlap of CS LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 2. I/O will assume the High-Z state if OE = VIH. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 03/24/04 7 IS65C256 WRITE CYCLE NO. 3 (OE is LOW During Write Cycle) (1) t WC ADDRESS VALID ADDRESS ISSI t HA ® OE CS LOW LOW t AW t PWE2 WE t SA DOUT DATA UNDEFINED t HZWE HIGH-Z t LZWE t SD DIN t HD DATAIN VALID CS_WR3.eps Notes: 1. The internal write time is defined by the overlap of CS LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write. 2. I/O will assume the High-Z state if OE = VIH. 8 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 03/24/04 IS65C256 ORDERING INFORMATION Temperature Range (A1): –40°C to +85°C Speed (ns) 20 Order Part No. IS65C256-20TA1 Package TSOP ISSI ® Temperature Range (A2): –40°C to +105°C Speed (ns) 20 Order Part No. IS65C256-20TA2 IS65C256-20UA2 Package TSOP Plastic SOP Temperature Range (A3): –40°C to +125°C Speed (ns) 20 Order Part No. IS65C256-20TA3 IS65C256-20UA3 Package TSOP Plastic SOP Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 03/24/04 9 PACKAGING INFORMATION Plastic TSOP - 28-pins Package Code: T (Type I) ISSI ® 1 E H N D SEATING PLANE S A e B L A1 α C Symbol Ref. Std. No. Leads A A1 B C D E H e L α Plastic TSOP (T—Type I) Millimeters Inches Min Max Min Max 28 1.00 1.20 0.05 0.20 0.16 0.27 0.10 0.20 7.90 8.10 11.70 11.90 13.20 13.60 0.55 BSC 0.30 0.70 0° 5° 0.037 0.047 0.002 0.008 0.006 0.011 0.004 0.008 0.308 0.316 0.456 0.465 0.515 0.531 0.022 BSC 0.011 0.027 0° 5° Notes: 1. Controlling dimension: millimeters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane. Integrated Silicon Solution, Inc. PK13197T28 Rev. B 01/31/97 1 PACKAGING INFORMATION 330-mil Plastic SOP Package Code: U (28-pin) N ISSI ® E1 E 1 D SEATING PLANE S A h x 45o e B L A1 α C MILLIMETERS Sym. A A1 B C D E E1 e h L α S Min. 28 2.84 — 0.51 — 18.24 12.12 8.53 0.51 1.14 8 o INCHES Min. 28 — 0.004 0.014 0.010 0.708 0.453 0.326 0.012 0.028 0 o Max. Max. 0.112 — 0.020 — 0.718 0.477 0.336 0.020 0.045 8o 0.047 No. Leads — 0.10 0.36 0.25 Notes: 1. Controlling dimension: inches, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane. 17.98 11.51 8.28 0.30 0.71 0 o 1.27 BSC 0.050 BSC 0.58 1.19 0.023 Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. C 02/26/03