AD408M91VLB-5

ASCEND Semiconductor 4Mx4 EDO Data sheet Rev.1 Page 1 AD 40 4M 4 2 V S A – 5 Ascend Semiconductor EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : 40 41 42 43 46 48 Density 16M : 16 Mega Bits 8M : 8 Mega Bits 4M : 4 Mega Bits 2M : 2 Mega Bits 1M : 1 Mega Bit Organization 4: x4 8 : x8 9 : x9 16 : x16 18 : x18 32 : x32 Refresh 1 : 1K 8 : 8K 2 : 2K 6 :16K 4 : 4K Min Cycle Time ( Max Freq.) -5 : 5ns ( 200MHz ) -6 : 6ns ( 167MHz ) -7 : 7ns ( 143MHz ) -75 : 7.5ns ( 133MHz ) -8 : 8ns ( 125MHz ) -10 : 10ns ( 100MHz ) EDO : -5 (50 ns) -6 (60 ns) Revision A : 1st B : 2nd C : 3rd D :4th Interface V: 3.3V R: 2.5V Package C: CSP B: uBGA T: TSOP Q: TQFP P: PQFP ( QFP ) L: LQFP S: SOJ Rev.1 Page 2 Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup, portable electronic application. lt is packaged in JEDEC standard 26/24-pin plastic SOJ or TSOP(II). Features • Single 3.3V( ± 10 %) only power supply • High speed tRAC acess time: 50/60ns • Low power dissipation - Active mode : 432/396 mW (Mas) - Standby mode: 0.54 mW (Mas) • Extended - data - out(EDO) page mode access • I/O level: CMOS level (Vcc = 3.3V) • 2048 refresh cycle in 32 ms(Std.) or 128 ms(S-version) • 4 refresh modesh: - RAS only refresh - CAS - before - RAS refresh - Hidden refresh - Self-refresh(S-version) Rev.1 Page 3 Pin Configuration 26/24-PIN 300mil Plastic SOJ 26/24-PIN 300mil Plastic TSOP (ll) VCC DQ1 DQ2 WE RAS NC A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 8 9 10 11 12 13 26 25 24 23 22 21 19 18 17 16 15 14 VSS DQ4 DQ3 CAS OE A9 A8 A7 A6 A5 A4 VSS VCC DQ1 DQ2 WE RAS NC A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 8 9 10 11 12 13 26 25 24 23 22 21 19 18 17 16 15 14 VSS DQ4 DQ3 CAS OE A9 A8 A7 A6 A5 A4 VSS AD404M42VT AD404M42VS Pin Description Pin Name A0-A10 Function Address inputs - Row address - Column address - Refresh address Data-in / data-out Row address strobe Column address strobe Write enable Output enable Power (+ 3.3V) Ground A0-A10 A0-A10 A0-A10 DQ1~DQ4 RAS CAS WE OE Vcc Vss Rev.1 Page 4 Block Diagram WE CAS CONTROL LOGIC DATA-IN BUFFER DQ1 . . DQ4 NO. 2 CLOCK GENERATOR DATA-OUT BUFFER OE COLUMN ADDRESS BUFFERS (11) A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 ROW DECODER COLUMN DECODER REFRESH CONTROLLER 2048 SENSE AMPLIFIERS I/O GATING REFRESH COUNTER 2048x4 A10 ROW ADDRESS BUFFERS (11) 2048x2048x4 MEMORY ARRAY 2048 RAS NO. 1 CLOCK GENERATOR Vcc Vss Rev.1 Page 5 TRUTH TABLE ADDRESSES FUNCTION RAS STANDBY READ WRITE: (EARLY WRITE ) READ WRITE EDO-PAGEMODE READ 1st Cycle 2nd Cycle EDO-PAGE 1st Cycle MODE WRITE 2nd Cycle EDOPAGE-MODE READ-WRITE HIDDEN REFRESH 1st Cycle 2nd Cycle READ WRITE RAS-ONLY REFRESH CBR REFRESH H L L L L L L L L L L→H→L L→H→L L H→L CAS H→X L L L H→L H→L H→L H→L H→L H→L L L H L WE X H L H→L H H L L H→L H→L H L X H OE X L X L→H L L X X ROW X ROW ROW ROW ROW n/a ROW n/a ROW n/a ROW ROW ROW X COL X COL COL COL COL COL COL COL COL COL COL COL n/a X High-Z Data-Out Data-ln Data-Out,Data-ln Data-Out Data-Out Data-In Data-In Data-Out, Data-In Data-Out, Data-In Data-Out Data-In High-Z High-Z 1 DQS Notes L→H L→H L X X X Notes: 1. EARLY WRITE only. Rev.1 Page 6 Absolute Maximum Ratings Parameter Voltage on any pin relative to Vss Supply voltage relative to Vss Short circuit output current Power dissipation Operating temperature Storage temperature Symbol VT VCC IOUT PD TOPT TSTG Value -0.5 to + 4.6 -0.5 to + 4.6 50 1.0 0 to + 70 -55 to + 125 Unit V V mA W °C °C Recommended DC Operating Conditions Parameter/Condition Symbol Min 3.3 Volt Version Typ 3.3 Max 3.6 Unit Supply Voltage Input High Voltage, all inputs Input Low Voltage, all inputs VCC VIH VIL 3.0 2.0 -0.3 V V V - VCC + 0.3 0.8 Capacitance Ta = 25°C, VCC = 3.3V ± 10 %, f = 1MHz Parameter Input capacitance (Address) Input capacitance (RAS, CAS, OE, WE) Output capacitance (Data-in, Data-out) Symbol CI1 CI2 CI/O Typ - Max 5 7 7 Unit pF pF pF Note 1 1 1, 2 Note: 1. Capacitance measured with effective capacitance measuring method. 2. RAS, CAS = V IH to disable Dout. Rev.1 Page 7 DC Characteristics : (Ta = 0 to 70°C , VCC = + 3.3V ± 10 %, VSS = 0V) Parameter Symbol Test Conditions -5 Min AD404M42V -6 Max 120 Min Max 110 Unit Notes Operating current ICC1 RAS cycling CAS, cycling tRC = min LVTTL interface RAS, CAS = VIH Dout = High-Z CMOS interface RAS, CAS ≥ V C C -0.2V Dout = High-Z - mA 1, 2 Low power S-version ICC2 - 0.5 - 0.5 mA - 0.15 - 0.15 mA Standby Current Standard power version LVTTL interface RAS, CAS = VIH Dout = High-Z CMOS interface RAS, CAS ≥ V C C -0.2V Dout = High-Z - 2 - 2 mA - 0.5 - 0.5 mA RAS- only refresh current EDO page mode current CAS- before- RAS refresh current Self- refresh current (S-Version) ICC3 ICC4 ICC5 ICC8 RAS cycling, CAS = VIH tRC = min tPC = min tRC = min RAS, CAS cycling t RASS ≥ 100 µ s - 120 90 120 550 - 110 80 110 550 mA mA mA µA 1, 2 1, 3 1, 2 Rev.1 Page 8 DC Characteristics : (Ta = 0 to 70°C, VCC= +3.3V ± 10 %, VSS= 0V) AD404M42V -5 Parameter Input leakage current Output leakage current Symbol ILI ILO VOH VOL Test Conditions 0V ≤ Vin ≤ V C C + 0.3V 0V ≤ Vout ≤ V CC + 0.3V Dout = Disable Output high Voltage Output low voltage IOH = -2mA IOL = +2mA 2.4 0.4 2.4 0.4 V V Min -5 -5 Max 5 5 Min -5 -5 -6 Max 5 5 µA µA Unit Notes Notes: 1. ICC is specified as an average current. It depends on output loading condition and cycle rate when the device is selected. ICC max is specified at the output open condition. 2. Address can be changed once or less while RAS = VIL. 3. For I CC4, address can be changed once or less within one EDO page mode cycle time. Rev.1 Page 9 AC Characteristics (T a = 0 to + 70°C, Vcc = 3.3V ± 10 %, Vss = 0V) *1, *2, *3, *4 Test conditions • Output load: one TTL Load and 100pF (VCC = 3.3V ± 10 %) • Input timing reference levels: VIH = 2.0V, VIL = 0.8V (VCC = 3.3V ± 10 %) • Output timing reference levels: VOH = 2.0V, VOL = 0.8V Read, Write, Read- Modify- Write and Refresh Cycles (Common Parameters) AD404M42V -5 Parameter Random read or write cycle time RAS precharge time CAS precharge time in normal mode RAS pulse width CAS pulse width Row address setup time Row address hold time Column address setup time Column address hold time RAS to CAS delay time RAS to column address delay time Column address to RAS lead time RAS hold time CAS hold time CAS to RAS precharge time OE to Din delay time Transition time (rise and fall) Refresh period Refresh period (S- Version) CAS to output in Low- Z CAS delay time from Din OE delay time from Din Symbol tRC tRP tCPN tRAS tCAS tASR tRAH tASC tCAH tRCD tRAD tRAL tRSH tCSH tCRP tOED tT tREF tREF tCLZ tDZC tDZO Min 84 30 10 50 8 0 8 0 8 12 10 25 8 38 5 12 1 0 0 0 Max 10000 10000 37 25 50 32 128 Min 104 40 10 60 10 0 10 0 10 14 12 30 10 40 5 15 1 0 0 0 -6 Max 10000 10000 45 30 50 32 128 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ms ns ns ns 11 10 8 9 7 5 6 Unit Notes Rev.1 Page 10 Read Cycle AD404M42V -5 Parameter Access time from RAS Access time from CAS Access time from column address Access time from OE Read command setup time Read command hold time to CAS Read command hold time to RAS Output buffer turn-off time Output buffer turn-off time from OE Symbol tRAC tCAC tAA tOEA tRCS tRCH tRRH tOFF tOEZ Min 0 0 0 0 0 Max 50 14 25 12 12 12 Min 0 0 0 0 0 -6 Max 60 15 30 15 15 15 ns ns ns ns ns ns ns ns ns 7 10, 16 16 17 17 12 13, 14 14, 15 Unit Notes Write Cycle AD404M42V -5 Parameter Write command setup time Write command hold time Write command pulse width Write command to RAS lead time Write command to CAS lead time Data-in setup time Data-in hold time WE to Data-in delay Symbol tWCS tWCH tWP tRWL tCWL tDS tDH tWED Min 0 8 8 13 8 0 8 10 Max Min 0 10 10 15 10 0 10 10 -6 Max ns ns ns ns ns ns ns ns 19 19 7, 18 Unit Notes Rev.1 Page 11 Read- Modify- Write Cycle AD404M42V -5 Parameter Read-modify- write cycle time RAS to WE delay time CAS to WE dealy time Column address to WE delay time OE hold time from WE Symbol tRWC tRWD tCWD tAWD tOEH Min 108 64 26 39 8 Max Min 133 77 32 47 10 -6 Max ns ns ns ns ns 18 18 18 Unit Notes Refresh Cycle AD404M42V -5 Parameter CAS setup time (CBR refresh) CAS hold time (CBR refresh) RAS precharge to CAS hold time RAS pulse width (self refresh) RAS precharge time (self refresh) CAS hold time (CBR self refresh) WE setup time WE hold time Symbol tCSR tCHR tRPC tRASS tRPS tCHS tWSR tWHR Min 5 8 5 100 90 -50 0 10 Max Min 5 10 5 100 110 -50 0 10 -6 Max Unit ns ns ns µs ns ns ns ns 10 7 Notes Rev.1 Page 12 EDO Page Mode Cycle AD404M42V -5 Parameter EDO page mode cycle time EDO page mode CAS precharge time EDO page mode RAS pulse width Access time from CAS precharge RAS hold time from CAS precharge OE high hold time from CAS high OE high pulse width Data output hold time after CAS low Output disable delay from WE WE pulse width for output disable when CAS high Symbol tPC tCP tRASP tCPA tCPRH tOEHC tOEP tCOH tWHZ tWPZ Min 20 10 50 30 5 10 5 3 7 Max 105 30 10 Min 25 10 60 35 5 10 5 3 7 -6 Max 105 35 10 Unit ns ns ns ns ns ns ns ns ns ns 20 10, 14 Notes EDO Page Mode Read Modify Write Cycle AD404M42V -5 Parameter EDO page mode read- modify- write cycle CAS precharge to WE delay time EDO page mode read- modify- write cycle time Symbol tCPW tPRWC Min 45 56 Max Min 55 68 -6 Max Unit ns ns Notes 10 Rev.1 Page 13 Notes : 1. AC measurements assume t T = 2ns. 2. An initial pause of 100 µ s is required after power up, and it followed by a minimum of eight initialization cycles (RAS - only refresh cycle or CAS - before - RAS refresh cycle). If the internal refresh counter is used, a minimun of eight CAS - before - RAS refresh cycles are required. 3. In delayed write or read-modify-write cycles, OE must disable output buffer prior to applying data to the device. 4. All the VCC and VSS pins shall be supplied with the same voltages. 5. tRAS(min) = tRWD(min)+t RWL(min)+tT in read-modify-write cycle. 6. tCAS (min) = tCWD(min)+tCWL(min)+tT in read-modify-write cycle. 7. tASC(min), tRCS (min), tWCS(min), and tRPC are determined by the falling edge of CAS . 8. t RCD(max) is specified as a reference point only, and tRAC (max) can be met with the tRCD(max) limit. Otherwise, tRAC is controlled exclusively by tCAC if tRCD is greater than the specified tRCD(max) limit. 9. tRAD(max) is specified as a reference point only, and tRAC(max) can be met with the tRAD(max) limit. Otherwise, tRAC is controlled exclusively by tAA if tRAD is greater than the specified tRAD(max) limit. 10. tCRP, tCHR , tRCH, tCPA and tCPW are determined by the rising edge of CAS . 11. V IH(min) and VIL(max) are reference levels for measuring timing or input signals. Therefore, transition time is measured between VIH and VIL. 12. Assumes that t RCD ≤ tRCD(max) and tRAD ≤ tRAD(max). If t RCD or tRAD is greater than the maximum recommended value shown in this table, tRAC exceeds the value shown. 13. Assumes that tRCD ≥ t RCD (max) and tRAD ≤ t RAD (max). ≥ tRAD (max). 14. Access time is determined by the maximum of tAA , tCAC, tCPA. 15. Assumes that t RCD ≤ tRCD (max) and t RAD 16. Either tRCH or tRRH must be satisfied for a read cycle. 17. tOFF(max) and tOEZ(max) define the time at which the output achieves the open circuit condition (high impedance). t OFF is determined by the later rising edge of RAS or CAS. 18. tWCS, tRWD, tCWD, and tAWD are not restrictive operating parameters. They are included in the data sheet as electrical characteristics only. If tWCS ≥ t WCS (min), the cycle is an early write cycle and the data out will remain open circuit (high impedance) throughout the entire cycle. If tRWD tCWD ≥ tRWD (min), ≥ t CWD (min), t AWD ≥ t AWD (min) and tCPW ≥ tCPW (min), the cycle is a read-modify-write and the data output will contain data read from the selected cell. If neither of the above sets of conditions is satisfied, the condition of the data output (at access time) is indeterminate. 19. These parameters are referenced to CAS separately in an early write cycle and to WE edge in a delayed write or a read-modify-write cycle. 20. tRASP defines RAS pulse width in EDO page mode cycles. Rev.1 Page 14 Timing Waveforms • Read Cycle t RC t RAS t RP RAS t CRP t CSH t RCD t T t RSH t CAS t CPN CAS t RAD t RAL t ASR t RAH Row t ASC t CAH Column t RRH ADDRESS t RCS t RCH WE OE t OEA t CAC t AA t RAC t OEZ t OFF t OFF DQ1~DQ4 t CLZ Note : = don’t care = Invalid Dout D OUT Rev.1 Page 15 •Early Write Cycle t RC t RAS t RP RAS t CSH t RCD t T t RSH t CRP t CPN t CAS CAS t RAD t ASR t RAH Row t ASC t CAH t RAL ADDRESS Column t RAL t WCS t WCH WE t DS t DH DQ1~DQ4 DIN Rev.1 Page 16 • Delayed Write Cycle t RC t RAS t RP RAS t CSH t RCD t T t RSH t CAS t CRP t CPN CAS t ASR t RAH t ASC t CAH ADDRESS Row Column t CWL t RCS t RWL t WP WE t OED t OEH OE t DS t DS t DH DQ1~DQ4 OPEN DIN Rev.1 Page 17 • Read - Modify - Write Cycle t RWC t RAS t RP RAS t T t RCD t CAS t CRP t CPN CAS t RAD t ASR t RAH t ASC t CAH ADDRESS Row Column t RCS t CWD t AWD t RWD t CWL t RWL t WP WE t DZC t DS t DH DQ1~DQ4 OPEN DIN t DZO t OED t OEH OE t OEA t CAC t AA t OEZ t RAC DQ1~DQ4 DOUT Rev.1 Page 18 • EDO Page Mode Read Cycle t RASP t CPRH t RP RAS t CRP t CSH t CRP t RCD t CAS t CP t PC t CAS t CP t RSH t CAS t CPN CAS t RAD t ASR t RAH t ASC t CAH t ASC t CAH t ASC t RAL t CAH ADDRESS Row Column 1 Column 2 Column N Row t RCS t RRH t RCH WE WE t OEHC t OEA t OEP t OEA OE OE t RAC t AA t CPA t AA t CPA t AA t OEZ t CAC t CAC t COH t CAC t OFF t OEZ t OFF DQ1~DQ4 DOUT 1 DOUT 2 DOUT N OPEN Rev.1 Page 19 • EDO Page Mode Early Write Cycle t RASP t RP RAS tT t CSH t RCD t CAS t CP t PC t CAS t CP t RSH t CAS t CRP t CPN CAS t ASR t RAH t ASC t CAH t ASC t CAH t ASC t CAH ADDRESS Row Column 1 Column 2 Column N t WCS t WCH t WCS t WCH t WCS t WCH WE WE t DS t DH t DS t DH t DS t DH DQ1~DQ4 DIN 1 DIN 2 DIN N Rev.1 Page 20 • EDO Page Mode Read-Early-Write Cycle t RASP t CPRH t RP RAS t CRP t CSH t CRP t RCD t CAS t CP t PC t CAS t CP t RSH t CAS t CPN CAS t CSH t RAD t ASR t RAH t ASC t RAH t ASC t CAH t ASC t CAL t RAL t CAH ADDRESS Row Column 1 Column 2 Column N Row t RCS t RCH t WCS t WCH WE WE t OEA t WED OE OE t RAC t AA t CPA t AA t WHZ t CAC t COH t CAC t DS Data Doutput 2 Data Input N t DH DQ1~DQ4 OPEN Data Doutput 1 Rev.1 Page 21 • EDO Page Mode Read-Modify-Write Cycle t RASP tCPRH t RP RAS t T t RCD t CAS t CP t PRWC t CAS t CP t CAS t CRP CAS t RAD t ASR t RAH t ASC t CAH t ASC t CAH t RAL t ASC t CAH ADDRESS Row Column 1 Column 1 t RWD t AWD t CWD t CWL Column 2 t CPW t AWD t CWD t CWL Column N t CWL t CPW t AWD t CWD t RWL t RCS t RCS WE WE t RCS t WP t DS t DZC t DH t DZC t WP t DZC t DS t DH t WP t DS t DH OPEN DQ1~DQ4 OPEN DIN 1 OPEN DIN 2 DIN N t DZO t DZO t OED t OEH t OED t OEH t DZO t OED t OEH OE t OEA t CAC t RAC t AA t OEZ t OEA t CAC t AA t CPA t OEZ t CAC t AA t CPA t OEZ t OEA DQ1~DQ4 DOUT 1 DOUT 2 DOUT N Rev.1 Page 22 • Read Cycle with WE Controlled Disable RAS t CSH t RCD t T t CAS CAS t RAD t ASR t RAH t ASC t CAH ADDRESS Row Column t RCS t RCH t WPZ WE t WHZ OE t DS tOEA tCAC t AA t RAC tOEZ DQ1~DQ4 tCLZ DOUT Rev.1 Page 23 RAS-Only Refresh Cycle t RC t RAS t RP RAS tT t CRP tRPC tCRP CAS tASR tRAH ADDRESS ROW tOFF OPEN DQ1~DQ4 CAS-Before-RAS Refresh Cycle tRC tRP tRAS tRP t RAS tRC t RP RAS tRPC tT t CSR t CHR tRPC tCSR t CHR tCRP CAS tWSR tWHR tWSR tWHR WE tOFF OPEN DQ1~DQ4 Rev.1 Page 24 CBR Self-Refesh Cycle t RASS t RPS RAS t RPC t CSR tCHS CAS tOFF High lmpedance DQ1~DQ4 tWSR tWHR WE OPEN Rev.1 Page 25 • Hidden Refresh Cycle t RC tRAS (READ) t RC t RP tRAS (REFRESH) t RC t RP tRAS (REFRESH) t RP RAS tT t CHR t RSH t RCD tCAS tCRP CAS t RAD t ASR t RAH tASC t RAL tCAH ADDRESS ROW COlumn tRRH t RCS tRCH WE OE t OEA t CAC t AA t RAC t OEZ t OFF t OFF DQ1~DQ4 D OUT Rev.1 Page 26 Ordering information Part Number AD404M42VSA-5 AD404M42VSA-6 AD404M42VTA-5 AD404M42VTA-6 AD404M42VSA-5 • AD • 40 • 4M4 •2 •V Access time 50 ns 60 ns 50 ns 60 ns Package 300mil 26/24-Pin Plastic SOJ TSOP II • Ascend Memory Product • Device Type • Density and Organization • Refresh Rate, 2: 2K Refresh • T: 5V, V: 3.3V • Package Type (S : SOJ, T : TSOP II) • Version • Speed (5: 50 ns, 6: 60 ns) •S •A •5 Packaging information • 300 mil, 26/24-Pin Plastic SOJ D DIM A A1 A2 b b1 b2 c c1 D E E1 E2 e R1 MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. 3.25 3.51 3.76 0.128 0.138 0.148 2.08 ----0.082 ----2.54 REF. 0.100 REF. 0.41 0.41 0.66 0.18 0.18 17.02 --0.46 --0.51 0.48 0.81 0.016 0.016 0.026 0.007 0.007 0.670 --0.018 --0.020 0.019 0.032 1 6 8 13 b 26 21 19 14 b1 c1 c E1 E BASE METAL WITH PLATING --0.30 --0.28 17.15 17.27 8.51 BASIC 7.49 7.62 7.75 6.78 BASIC 1.27 BASIC 0.76 --1.02 --0.012 0.011 --0.675 0.680 0.335 BASIC 0.295 0.300 0.305 0.267 BASIC 0.050 BASIC 0.030 --0.040 SECTION B-B C L A2 0.025" MIN. A A1 B B E2 NOTE: 1. CONTROLLING DIMENSION : INCHES 2. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. MOLD PROTRUSION SHALL NOT EXCEED 0.006"(0.15mm) PER SIDE. DIMENSION E1 DOES NOT INCLUDE INTERLEAD PROTRUSION. INTERLEAD PROTRUSION SHALL NOT EXCEED 0.01"(0.25mm) PER SIDE. 3. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION OR INTRUSION. DAMBAR PROTRUSION SHALL NOT CAUSE THE SHOULDER WIDTH TO EXCEED b2 MAX BY MORE THAN 0.005"(0.127mm) DAMBAR INTRUSION SHALL NOT REDUCE THE SHOULDER WIDTH TO LESS THAN 0.001"(0.025mm) BELOW b2 MIN. e b2 b 0.007" M 4-e 0.004" RAD R1 SEATING PLANE Rev.1 Page 27 • 300 mil, 26/24-Pin TSOP II DIM A A1 A2 b b1 c c1 D ZD e E E1 L R R1 MILLIMETERS MIN. --0.05 0.95 0.30 0.30 0.12 0.12 17.01 NOM. ----1.00 --0.40 --0.15 17.14 0.95 REF. 1.27 BASIC 9.02 7.49 0.40 0.12 0.12 9.22 7.62 0.50 ----9.42 7.75 0.60 0.25 --0.355 0.295 0.016 0.005 0.005 MAX. 1.20 0.15 1.05 0.52 0.45 0.21 0.16 17.27 MIN. --0.002 0.037 0.012 0.012 0.005 0.005 0.670 INCHES NOM. ----0.039 --0.016 --0.006 0.675 0.050 BASIC 0.363 0.300 0.020 ----0.371 0.305 0.024 0.010 --(ZD) A MAX. 0.047 0.006 0.041 0.020 0.018 0.008 (0.006) 0.680 1 6 D 8 13 b b1 E1 E A1 26 21 19 14 A2 RAD R1 RAD R B B c DETAIL A L 0 ~5 0.0374 BASIC SECTION B-B c c1 BASE METAL WITH PLATING DETAIL A NOTE: 1. CONTROLLING DIMENSION : MILLIMETERS 2. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. MOLD PROTRUSION SHALL NOT EXCEED 0.15(0.006") PER SIDE. DIMENSION E1 DOES NOT INCLUDE INTERLEAD PROTRUSION. INTERLEAD PROTRUSION SHALL NOT EXCEED 0.25(0.01") PER SIDE. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSIONS/INTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL NOT CAUSE THE LEAD TO BE WIDER THAN THE MAX b DIMENSION BY MORE THAN 0.13mm. DAMBAR INTRUSION SHALL NOT CAUSE THE LEAD TO BE NARROWER THAN THE MIN b DIMENSION BY MORE THAN 0.07mm. 4-1.27 REF. b 0.200(0.008") M e SEATING PLANE 0.100(0.004") Rev.1 Page 28