AH115

AH115 / ECP050G ½ Watt, High Linearity InGaP HBT Amplifier The Communications Edge TM Product Information Product Features x 1800 – 2300 MHz x +28.5 dBm P1dB x +44 dBm Output IP3 Product Description The AH115 / ECP050 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrow-band tuned application circuits with up to +44 dBm OIP3 and +28.5 dBm of compressed 1-dB power. All devices are 100% RF and DC tested. The AH115 / ECP050 is available in lead-free/green/RoHS-compliant SOIC-8 package. The product is targeted for use as driver amplifiers for wireless infrastructure where high linearity and medium power is required. The internal active bias allows the AH115 / ECP050 to maintain high linearity over temperature and operate directly off a +5 V supply. This combination makes the device an excellent fit for transceiver line cards and power amplifiers in current and next generation multi-carrier 3G base stations. Functional Diagram 1 8 7 6 5 2 3 4 x 14 dB Gain @ 1960 MHz x MTTF > 100 Years x +5V Single Positive Supply x Lead-free/green/RoHS-compliant SOIC-8 SMT Pkg. Applications x Mobile Infrastructure x Final Stage Amplifier for Repeaters Function Vref Input / Base Output / Collector Vbias GND N/C or GND Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5 Specifications (1) Parameters Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) IS-95A Channel Power @ -45 dBc ACPR, 1960 MHz Typical Performance (1) Min 1800 12.5 2140 14.4 23 8 +28.5 +42 +22.5 +20 200 5.3 250 +5 300 Units MHz MHz dB dB dB dBm dBm dBm dBm dB mA V Typ Max 2300 Parameters Frequency Gain S11 S22 Output P1dB Output IP3 (2) IS-95A Channel Power @ -45 dBc ACPR, @ -45 dBc ACLR Units MHz dB dB dB dBm dBm dBm dBm dB Typical 1960 14.3 -12 -8 +28.3 +44 +22.5 +20 5 5.3 +5 V @ 250 mA 2140 14.4 -23 -8 +28.5 +42 +26.5 +41 W-CDMA Channel Power Noise Figure Supply Bias W-CDMA Channel Power @ -45 dBc ACLR, 2140 MHz Noise Figure Operating Current Range (3) Device Voltage 1. Test conditions unless otherwise noted. 25ºC, Vsupply = +5 V in tuned application circuit. 2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions. It is expected that the current can increase up to 300mA at P1dB. Absolute Maximum Rating Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature Ordering Information Part No. AH115-S8 ECP050G AH115-S8G AH115-S8PCB1960 AH115-S8PCB2140 Parameter -40 to +85 qC -65 to +150 qC +22 dBm +8 V 400 mA 2W +250 qC Rating Description (lead-tin SOIC-8 Pkg) (lead-tin SOIC-8 Pkg) ½ Watt, High Linearity InGaP HBT Amplifier ½ Watt, High Linearity InGaP HBT Amplifier 1960 MHz Evaluation Board 2140 MHz Evaluation Board (lead-free/green/RoHS-compliant SOIC-8 Pkg) ½ Watt, High Linearity InGaP HBT Amplifier Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice         WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 1 of 7 May 2005 AH115 / ECP050G ½ Watt, High Linearity InGaP HBT Amplifier The Communications Edge TM Product Information S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25 C, unmatched 50 ohm system) 35 30 25 G ain (dB) 20 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 0.2 Typical Device Data S11 6 0. 0. 8 6 0. Gain and Maximum Stable Gain 0. 4 Swp Max 5.05GHz 2. 0 1.0 0.8 1.0 0 3. 0 4. 10.0 15 10 5 0 0 0.5 1 1.5 Frequency (GHz) 2 2.5 5.0 0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 .4 -0 .4 -0 .0 -2 -0 .6 -0 .6 .0 -2 -0.8 Swp Min 0.05GHz -0 .8 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The return loss plots are shown from 50 – 5050 MHz, with markers placed at 0.5 – 5.05 GHz in 0.5 GHz increments. S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) ¢ -1.0 S12 (dB) S12 (ang) S22 (dB) -1.0 S22 (ang) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 -2.11 -1.59 -1.51 -1.45 -1.58 -1.78 -1.96 -2.46 -3.30 -4.70 -8.15 -19.01 -9.59 -4.09 -1.99 -1.12 -0.72 -172.90 -178.94 173.71 163.84 153.68 144.31 134.21 123.44 111.21 92.57 78.58 93.29 177.56 159.30 141.65 127.57 116.11 25.10 21.15 17.75 15.23 13.69 12.77 11.94 11.36 11.17 11.39 11.64 11.51 10.35 7.87 4.95 1.97 -0.88 133.84 126.67 124.19 111.50 98.94 84.57 69.70 55.57 40.93 22.80 1.64 -25.24 -55.97 -83.78 -105.90 -122.86 -136.93 -36.03 -35.22 -34.29 -34.45 -33.58 -32.84 -32.77 -31.79 -31.12 -30.30 -29.47 -29.31 -30.51 -32.59 -33.96 -34.68 -35.64 31.44 15.04 7.30 -2.16 -2.99 -12.80 -18.76 -30.73 -45.14 -61.92 -83.99 -112.79 -150.45 177.62 137.14 109.27 81.83 -2.06 -2.73 -2.80 -2.73 -1.96 -1.68 -1.85 -2.14 -2.30 -2.52 -2.43 -1.84 -1.22 -1.06 -1.07 -1.19 -1.44 -105.55 -138.75 -160.44 -174.00 -179.13 172.00 166.98 164.05 163.07 164.84 164.25 162.38 155.68 147.58 139.74 132.15 125.05 Application Circuit PC Board Layout Circuit Board Material: .014” Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments. Specifications and information are subject to change without notice         WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 2 of 7 -4 .0 -5 . 0 -3 .0 -4 .0 -5. 0 2 -0. 2 -0 . Sw p Min 0.05GHz -10.0 0. 2 0 5. 0. 4 DB(GMax) DB(|S[2,1]|) 2. 0 -1 0.0 -3 .0 ¡ S22 Sw p Max 5.05GHz 0 3. 0 4. 5. 0 10 .0 May 2005 AH115 / ECP050G ½ Watt, High Linearity InGaP HBT Amplifier Typical RF Performance at 25qC Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+11 dBm / tone, 1 MHz spacing) The Communications Edge TM Product Information 1960 MHz Application Circuit (AH115-S8PCB1960) 1960 MHz 14.3 dB -12 dB -8 dB +28.3 dBm +44 dBm +22.5 dBm 5 dB +5 V 250 mA RES ID=R1 R=100 Ohm RES ID=R4 R=0 Ohm Vcc = +5 V D1 = +5.6 V CAP ID=C4 C=10000000 pF CAP ID=C7 C=1000 pF CAP ID=C6 C=10 pF RES ID=R2 R=22 Ohm CAP ID=C5 C=1000 pF TLINP ID=FR-2 Z0=50 Ohm L=25 mil Eeff=3.16 Loss=0 F0=0 MHz PORT P=1 Z=50 Ohm CAP ID=C1 C=22 pF RES ID=R3 R=51 Ohm SUBCKT NET="AH115" 1 2 3 4 5 6 7 8 IND ID=L1 L=18 nH PORT P=2 Z=50 Ohm Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) CAP ID=C2 C=22 pF Noise Figure Device / Supply Voltage Quiescent Current CAP ID=C8 C=.8 pF TLINP ID=FR-1 Z0=50 Ohm L=210 mil Eeff=3.16 Loss=0 F0=0 MHz CAP ID=C9 C=2.0 pF CAP ID=C3 C=100 pF C8 is placed at silkscreen marker ‘A’ or center of component placed at 1.8 deg. @ 1960 MHz away from pin 3. C9 is placed at the silkscreen marker ‘4’ or center of component placed at 20 deg. @1960 MHz away from pin 6. S21 vs. Frequency 16 14 S21 (dB) S11 vs. Freqency 0 -5 S11 (dB) S22 (dB) S22 vs. Frequency 0 -5 -10 -15 -20 +25°C +85°C -40°C 1940 1950 1960 1970 1980 1990 12 10 8 6 1930 +25°C +85°C -40°C 1940 1950 1960 1970 1980 1990 -10 -15 -20 -25 1930 +25°C 85°C -40°C 1940 1950 1960 1970 1980 1990 Frequency (MHz) Frequency (MHz) -25 1930 Frequency (MHz) Noise Figure vs. Frequency 7 6 P1 dB (dBm) P1 dB vs. Frequency 30 29 ACPR (dBc) ACPR vs. Channel Power IS-95, 9 ch,Fwd, ±885 KHz offset, 30 KHz Meas BW, 1960 MHz -40 -45 -50 -55 -60 -65 -70 1940 1950 1960 1970 1980 1990 15 16 17 18 19 20 21 Frequency (MHz) +25°C +85°C -40°C 22 23 24 5 NF (dB) 4 3 2 1 0 1930 +25°C +85°C -40°C 1940 1950 1960 1970 1980 1990 28 27 26 25 24 1930 +25°C +85°C -40°C Frequency (MHz) Output Channel Power (dBm) OIP3 vs. Output Power freq=1960, 1961 MHz,+ 25° C OIP3 vs. Frequency +25°C, +11 dBm / tone OIP3 vs. Temperature freq=1960,1961 MHz, +11 dBm / tone 46 44 OIP3 (dBm) OIP3 (dBm) 46 44 42 40 38 36 1930 OIP3 (dBm) 46 44 42 40 38 36 1940 1950 1960 1970 1980 1990 42 40 38 36 8 10 12 14 16 Output Power (dBm) 18 20 -40 -15 10 35 60 85 Frequency (MHz) Temperature (°C) Specifications and information are subject to change without notice £ £ £ £ WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 3 of 7 May 2005 ½ Watt, High Linearity InGaP HBT Amplifier AH115 / ECP050G 2140 MHz 14.4 dB -23 dB -8 dB +28.5 dBm +42 dBm +20 dBm 5.3 dB +5 V 250 mA PORT P=1 Z=50 Ohm The Communications Edge TM Product Information 2140 MHz Application Circuit (AH115-S8PCB2140) Typical RF Performance at 25qC Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+11 dBm / tone, 1 MHz spacing) (@-45 dBc ACLR) RES ID =R1 R=100 Ohm RES ID=R4 R=0 Ohm Vcc = +5 V D1 = +5.6 V CAP ID=C 4 C=10000000 pF CAP ID=C7 C=1000 pF C AP ID=C 6 C =10 pF RES ID=R2 R=22 Ohm CAP ID=C5 C=1000 pF RES ID=R3 R=51 Ohm C AP ID=C1 C=22 pF SUBCKT NET="AH115" 1 2 3 5 6 7 8 IND ID=L1 L=18 nH PORT P=2 Z=50 Ohm W-CDMA Channel Power Noise Figure Device / Supply Voltage Quiescent Current CAP ID =C2 C=22 pF 4 TLINP ID=FR-1 Z0=50 Ohm L=160 mil Eeff=3.16 Loss=0 F0=0 MHz CAP ID =C9 C=1.8 pF CAP ID=C3 C=100 pF C9 is placed at the silkscreen marker ‘3’ or center of component placed at 13 deg. @2140 MHz away from pin 6. S21 vs. Frequency 16 14 S11 (dB) S21 (dB) S11 vs. Frequency 0 -5 -10 -15 -20 -25 2110 +25°C +85°C S22 (dB) S22 vs. Frequency 0 -5 -10 -15 -20 -25 2110 +25°C +85°C -40°C 2120 2130 2140 2150 2160 2170 12 10 8 6 2110 +25°C +85°C -40°C 2120 2130 2140 2150 2160 2170 -40°C 2120 2130 2140 2150 2160 2170 Frequency (MHz) Frequency (MHz) 3GPP W-CDMA Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz Frequency (MHz) Noise Figure vs. Frequency 8 7 6 ACPR (dBc) ACPR vs. Channel Power P1 dB vs. Frequency 30 28 P1 dB (dBm) -35 -40 -45 -50 -55 -60 -65 +25°C +85°C -40°C NF (dB) 5 4 3 2 1 0 2110 2120 + 25°C +85°C -40°C 2130 2140 2150 2160 2170 26 24 22 +25°C +85°C -40°C 2120 2130 2140 2150 2160 2170 15 16 17 18 19 20 21 20 2110 Frequency (MHz) Output Channel Power (dBm) Frequency (MHz) OIP3 vs. Frequency +25°C, +11 dBm / tone freq. = 2140, 2141, +11 dBm / tone OIP3 vs. Temperature OIP3 vs. Output Power 45 43 OIP3 (dBm) 45 43 OIP3 (dBm) OIP3 (dBm) 45 43 41 39 37 35 freq. = 2140, 2141 MHz, 25° C 41 39 37 35 2110 41 39 37 35 2120 2130 2140 2150 Frequency (MHz) 2160 2170 -40 -15 10 35 Temperature ( °C) 60 85 6 8 10 12 14 16 18 20 Output Power (dBm) Specifications and information are subject to change without notice ¤ ¤ ¤ ¤ WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 4 of 7 May 2005 ½ Watt, High Linearity InGaP HBT Amplifier AH115 / ECP050G Outline Drawing The Communications Edge TM Product Information AH115-S8 (SOIC-8 Package) Mechanical Information This package may contain lead-bearing materials. The plating material on the leads is SnPb. Product Marking The component will be marked with an “AH115-S8” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information MSL Rating: Level 3 at +235 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes Land Pattern 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135” ) diameter drill and have a final plated thru diameter of .25 mm (.010” ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Parameter Operating Case Temperature Thermal Resistance (1), Rth Junction Temperature (2), Tjc ¦ Rating MTTF vs. GND Tab Temperature 1000000 MTTF (million hrs) Notes: 1. The thermal resistance is referenced from the junction-tocase at a case temperature of 85 C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 250 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. ¦ ¦ -40 to +85q C 62q C / W 162q C 100000 10000 1000 100 50 60 70 80 90 100 Tab Temperature (° C ) Specifications and information are subject to change without notice ¥ ¥ ¥ ¥ WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 5 of 7 ¦ § ESD Rating: Value: Test: Standard: Class 1B Passes 500V to