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AP1045A

AP1045A

  • 厂商:

    ETC

  • 封装:

  • 描述:

    AP1045A - 2.4~2.5 GHz High Power Amplifier - List of Unclassifed Manufacturers

  • 数据手册
  • 价格&库存
AP1045A 数据手册
AP1045A 2.4~2.5 GHz High Power Amplifier 2004.12.20 AP1045A is a linear, two-stages power amplifier MMIC with high output power in 2.4GHz band utilizing InGaP/GaAs HBT process. With the excellent linearity performance, the device delivers 20dBm output power under 54Mbps OFDM (IEEE802.11g) modulation, with 3% EVM at 3.3V. It can also deliver 22.5dBm 11g linear power at 5V. The PA also includes on-chip power detector, providing a DC voltage proportional to the output power of device. The AP1045A is housed in a 3 x 3(mm), 16 pin, QFN leadless package. • High Power: 20dBm 11g linear power at 3.3V 22.5dBm 11g linear power at 5V • High Gain: 30.5dB Gain at 3.3V, Pout=20dBm • Detector Major Applications • IEEE 802.11b/g • Wireless LAN Systems • 2.4 GHz ISM Band Application • Suitable for high power WLAN applications Pin Details Pin Number 1 2 3 4 Name RF_IN GND Bias_Vcc Dect_Out Vb1 Vb2 GND NC NC RF_OUT RF_OUT RF_OUT Vcc Vcc NC NC GND Description RF input Ground Bias Ckt Voltage Detector Output First stage Bias Second stage Bias Ground No contact No contact RF output RF output RF output Power supply input Power supply input No contact No contact Ground Functional Block Diagram NC NC Vcc Vcc 5 6 16 RF_IN 15 14 13 12 11 10 RF_OUT 7 8 9 10 11 RF_OUT 1 2 3 Bias GND RF_OUT Bias_Vcc 12 13 AP1045A Dect_Out 4 5 Vb1 9 6 Vb2 NC 14 15 16 Pkg Base 7 GND 8 NC QFN-16pin, 3x3 (mm) For more information,please contact us at: Sales Dept. Tel: +886-2-2698-1022 e-mail: sales@rfintc.com © 2003 RF Integrated Corporation. All rights reserved. RF integrated Corp. reserved the right to make any changes to the specifications without notice. 1 of 6 AP1045A 2.4~2.5 GHz High Power Amplifier 2004.12.20 Items Freq. Power Gain P1dB Idle current In put return loss Out put return loss Linear power Current consumption Gain flatness Harmonics PAE @ linear power Max. Input power On chip detector 2f 3f PAE No damage @3.3V, 20dBm 10 1.00 2f 3f Icc @3.3V, 64QAM modulation type @5V, 64QAM modulation type @3.3V, Pout=20dBm @5V, Pout=22.5dBm Icq @3.3V -10 -9 20 22.5 190 280 +/-0.5 -35 -35 15% dBc Symbol f Test Conditions Max. 2.5 Typ. Min. 2.4 Unit GHz dB dBm mA dB dB dBm @3.3V, Pout=20dBm with 64QAM Modulation Signal 30.5 26.5 130 mA % dBm V Absolute Maximum Ratings Parameter DC Power Supply DC Supply Current RF Input Power Operating Ambient Temperature Storage Temperature Rating 5.5 550 10 -40 to +85 -40 to +125 Unit V mA dBm ℃ ℃ Caution RF Integrated Corp. believes the information provided is reliable at present time. However, we assumes no responsibility for inaccuracies and omissions and use of the information shall be entirely at the user’s own risk. RF Integrated Corp. reserves the right to make change to the specifications without notice. AP1045A Notes:1.Exceeding Maximum ratings could cause damage to the device. 2.This device operation condition is biasing at 5V, please refer to the application note. For more information,please contact us at: Sales Dept. Tel: +886-2-2698-1022 e-mail: sales@rfintc.com © 2003 RF Integrated Corporation. All rights reserved. RF integrated Corp. reserved the right to make any changes to the specifications without notice. 2 of 6 AP1045A 2.4~2.5 GHz High Power Amplifier 2004.12.20 Data Charts (AP1045A Evaluation Kit, RF Signal = With IEEE 802.11g Modulation (54Mbps), Vcc=3.3V, Vref=2.8V, TA = 25℃, unless otherwise noted.) Fig.1 EVM, Icc vs. Output Power 8 7 6 5 EVM ( %) 240 210 180 150 120 90 60 30 0 10 11 12 13 14 15 16 17 18 19 20 21 22 Pout (dBm) Icc(mA)@Vc=3.3V EVM(%)@Vc=3.3V 4 3 2 1 0 Fig.2 Gain vs. Output Power 34 32 Fig.3 Detector Output vs. Output Power Detector Output ( V) 1.4 1.2 1 0.8 0.6 Gain (dB) 30 28 26 24 22 20 10 11 12 13 14 15 16 17 18 19 20 21 22 Icc (mA) AP1045A 0.4 0.2 0 10 11 12 13 14 15 16 17 18 19 20 21 22 Pout (dBm) Pout (dBm) Fig. 3 For more information,please contact us at: Sales Dept. Tel: +886-2-2698-1022 e-mail: sales@rfintc.com © 2003 RF Integrated Corporation. All rights reserved. RF integrated Corp. reserved the right to make any changes to the specifications without notice. 3 of 6 AP1045A 2.4~2.5 GHz High Power Amplifier 2004.12.20 Data Charts Small Signal S-Parameter Data Fig.4 S21 DB(|S(2,1)|) 76_07_3 DB(|S(2,1)|) 76_07_12 DB(|S(2,1)|) 76_07_13 DB(|S(2,1)|) 76_07_14 DB(|S(2,1)|) 76_07_15 DB(|S(2,1)|) 76_07_16 DB(|S(2,1)|) 76_07_17 DB(|S(2,1)|) 76_07_2 DB(|S(2,1)|) 76_07_1 DB(|S(2,1)|) 76_07_4 DB(|S(2,1)|) 76_07_8 DB(|S(2,1)|) 76_07_9 35DB(|S(2,1)|) 76_07_11 30 25 20 15 10 5 0 2.2 2.25 Graph 2 2.4 GHz 28.38 dB 2.499 GHz 28.47 dB 2.3 2.35 2.4 2.45 2.5 2.55 Frequency (GHz) 2.6 2.65 2.7 2.75 2.8 Fig.5 S11 DB(|S(1,1)|) 76_07_3 DB(|S(1,1)|) 76_07_11 DB(|S(1,1)|) 76_07_12 DB(|S(1,1)|) 76_07_13 DB(|S(1,1)|) 76_07_14 DB(|S(1,1)|) 76_07_15 Fig.6 S22 DB(|S(1,1)|) 76_07_2 DB(|S(1,1)|) 76_07_1 DB(|S(1,1)|) 76_07_4 DB(|S(1,1)|) 76_07_8 DB(|S(1,1)|) 76_07_9 0 76_07_16 Graph 3 DB(|S(1,1)|) 76_07_17 DB(|S(1,1)|) DB(|S(2,2)|) 76_07_3 DB(|S(2,2)|) 76_07_12 DB(|S(2,2)|) 76_07_13 DB(|S(2,2)|) 76_07_14 DB(|S(2,2)|) 76_07_15 0 DB(|S(2,2)|) 76_07_11 -5 76_07_16 Graph 1 DB(|S(2,2)|) 76_07_17 DB(|S(2,2)|) DB(|S(2,2)|) 76_07_2 DB(|S(2,2)|) 76_07_1 DB(|S(2,2)|) 76_07_4 DB(|S(2,2)|) 76_07_8 DB(|S(2,2)|) 76_07_9 -10 2.3993 GHz -17.11 dB 2.4994 GHz -15.14 dB -20 -10 2.3998 GHz -12.37 dB 2.4982 GHz -11.3 dB -30 -15 -40 -20 AP1045A -50 2.2 2.25 2.3 2.35 2.4 2.45 2.5 2.55 Frequency (GHz) 2.6 2.65 2.7 2.75 2.8 -25 2.2 2.25 2.3 2.35 2.4 2.45 2.5 2.55 Frequency (GHz) 2.6 2.65 2.7 2.75 2.8 For more information,please contact us at: Sales Dept. Tel: +886-2-2698-1022 e-mail: sales@rfintc.com © 2003 RF Integrated Corporation. All rights reserved. RF integrated Corp. reserved the right to make any changes to the specifications without notice. 4 of 6 AP1045A 2.4~2.5 GHz High Power Amplifier 2004.12.20 Package Outline Top View 3.00 + 0.1 0.40 Bottom View 1.50 0.23 TYP. 0.5 TYP. 0.23 TYP. 0.5 TYP. 3.00 + 0.1 MARKING 0.40 Side View Unit: mm 0.0 ~ 0.05 C SEATING PLANE 0.25 0.75 MAX. 0.50 1.50 AP1045A Note: 1. Dimension and tolerance conform to ASME Y14.5M1994. 2. Refer to JEDEC STD. MO-220 WEED-2 ISSUE B For more detailed information, please refer to AP1098 Application Note. For more information,please contact us at: Sales Dept. Tel: +886-2-2698-1022 e-mail: sales@rfintc.com © 2003 RF Integrated Corporation. All rights reserved. RF integrated Corp. reserved the right to make any changes to the specifications without notice. 5 of 6 AP1045A 2.4~2.5 GHz High Power Amplifier 2004.12.20 EVB Circuit Diagram C8 1uF Vcc(3.3V) C7 1uF C6 100nF L2 2.7nH RF_IN 16 1 2 15 14 13 12 C5 10pF 11 10 Bias Ckt. 50ohm MTL 0.5mm 50ohm MTL 2.0mm RF_OUT R1 Vcc_bias 3.3V 120ohm 3 4 C1 47pF C3 0.5pF C4 1.8pF 9 5 6 7 8 R2 27kohm Detector_Out R3 330ohm R4 560ohm C2 10nF AP1045A Vref2,3 (2.8V) For more information,please contact us at: Sales Dept. Tel: +886-2-2698-1022 e-mail: sales@rfintc.com © 2003 RF Integrated Corporation. All rights reserved. RF integrated Corp. reserved the right to make any changes to the specifications without notice. 6 of 6
AP1045A 价格&库存

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