AP9936M
Advanced Power Electronics Corp.
▼ DC-DC Application ▼ Dual N-channel Device ▼ Surface Mount Package
G2 S2 D1 D1 D2 D2
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 50mΩ 5A
SO-8
S1
G1
Description
D1
D2
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G1 S1
G2 S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 ± 20 5 4 40 2 0.016 -55 to 150 -55 to 150
Units V V A A A W W/℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit ℃/W
Data and specifications subject to change without notice
20102202
AP9936M
Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. 30 1 -
Typ. 0.037
Max. Units 50 80 3 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Static Drain-Source On-Resistance
VGS=10V, ID=5A VGS=4.5V, ID=3.9A VDS=VGS, ID=250uA VDS=15V, ID=5A
6 6.1 1.4 3.3 6.7 6.4 22.1 2.1 240 145 55
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C)
o o
VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= ± 20V ID=5A VDS=15V VGS=5V VDS=15V ID=1.5A RG=3.3Ω,VGS=10V RD=10Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol IS VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.2V Tj=25℃, IS=1.7A, VGS=0V
Min. -
Typ. -
Max. Units 1.67 1.2 A V
Forward On Voltage
2
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width
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