AS29LV400

Preliminary Information March 2001 ® AS29LV400 3V 512K x 8/256K × 16 CMOS Flash EEPROM Features • Organization: 512Kx8/256Kx16 • Sector architecture - One 16K; two 8K; one 32K; and seven 64K byte sectors - One 8K; two 4K; one 16K; and seven 32K word sectors - Boot code sector architecture—T (top) or B (bottom) - Erase any combination of sectors or full chip • Single 2.7-3.6V power supply for read/write operations • Sector protection • High speed 70/80/90/120 ns address access time • Automated on-chip programming algorithm - Automatically programs/verifies data at specified address • Automated on-chip erase algorithm - Automatically preprograms/erases chip or specified sectors • Hardware R ES ET pin - Resets internal state machine to read mode • Low power consumption - 200 nA typical automatic sleep mode current - 200 nA typical standby current - 10 mA typical read current • JEDEC standard software, packages and pinouts - 48-pin TSOP - 44-pin SO; availabillity TBD • Detection of program/erase cycle completion - DQ7 D ATA polling - DQ6 toggle bit - DQ2 toggle bit - RY/B Y output • Erase suspend/resume - Supports reading data from or programming data to a sector not being erased • Low VCC write lock-out below 1.5V • 10 year data retention at 150C • 100,000 write/erase cycle endurance Logic block diagram RY/ VCC VSS Pin arrangement 48-pin TSOP RE SE T 44-pin SO RY/BY NC A17 A7 A6 A5 A4 A3 A2 A1 A0 CE VSS OE DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 RESET WE A8 A9 A10 A11 A12 A13 A14 A15 A16 BY Sector protect/ erase voltage switches Erase voltage generator NC RY/BY NC A17 A7 A6 A5 A4 A3 A2 A1 DQ0–DQ15 A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE NC R ESE T WE B Y TE CE OE A-1 Program/erase control Command register Input/output buffers 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 AS29LV40 Chip enable Output enable Logic STB Data latch AS29LV40 Program voltage generator BY TE VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC VCC detector Timer Address latch STB Y decoder Y gating 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 X decoder Cell matrix A0–A17 VSS A0 CE DQ0 OE DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ15/A-1 VSS BYTE A16 Selection guide 29LV400-70 Maximum access time Maximum chip enable access time Maximum output enable access time tAA tCE tOE 70 70 30 29LV400-80 80 80 30 29LV400-90 90 90 35 29LV400-120 120 120 50 Unit ns ns ns 3/20/01; V.0.9.3 Alliance Semiconductor P. 1 of 25 Copyright © Alliance Semiconductor. All rights reserved. March 2001 ® AS29LV400 Functional description The AS29LV400 is an 4 megabit, 3.0 volt Flash memory organized as 512Kbyte of 8 bits/256Kbytes of 16 bits each. For flexible Erase and Program capability, the 4 megabits of data is divided into eleven sectors: one 16K, two 8K, one 32K, and seven 64k byte sectors; or one 8K, two 4K, one 16K, and seven 32K word sectors. The ×8 data appears on DQ0–DQ7; the ×16 data appears on DQ0–DQ15. The AS29LV400 is offered in JEDEC standard 48-pin TSOP. A 44-pin SOP package may be offered in the future. This device is designed to be programmed and erased with a single 3.0V VCC supply. The device can also be reprogrammed in standard EPROM programmers. The AS29LV400 offers access times of 70/80/90/120 ns, allowing 0-wait state operation of high speed microprocessors. To eliminate bus contention the device has separate chip enable (CE ), write enable (W E ), and output enable (OE ) controls. Word mode (×16 output) is selected by B Y T E = high. Byte mode (×8 output) is selected by B Y T E = low. The AS29LV400 is fully compatible with the JEDEC single power supply Flash standard. The device uses standard microprocessor write timings to send Write commands to the register. An internal state-machine uses register contents to control the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the Programming and Erase operations. Data is read in the same manner as other Flash or EPROM devices. Use the Program command sequence to invoke the on-chip programming algorithm that automatically times the program pulse widths, and verifies proper cell margin. Use the Erase command sequence to invoke the automated on-chip erase algorithm that preprograms the sector when it is not already programmed before executing the erase operation. The Erase command also times the erase pulse widths and verifies the proper cell margins. Boot sector architecture enables the system to boot from either the top (AS29LV400T) or the bottom (AS29LV400B) sector. Sector erase architecture allows specified sectors of memory to be erased and reprogrammed without altering data in other sectors. A sector typically erases and verifies within 1.0 seconds. Hardware sector protection disables both the Program and the Erase operations in all, or any combination of the eleven sectors. The device provides true background erase with Erase Suspend, which puts erase operations on hold to either read data from, or program data to, a sector that is not being erased. The Chip Erase command will automatically erase all unprotected sectors. When shipped from the factory, AS29LV400 is fully erased (all bits = 1). The programming operation sets bits to 0. Data is programmed into the array one byte at a time in any sequence and across sector boundaries. A sector must be erased to change bits from 0 to 1. Erase returns all bytes in a sector to the erased state (all bits = 1). Each sector is erased individually with no effect on other sectors. The device features a single 3.0V power supply operation for Read, Write, and Erase functions. Internally generated and regulated voltages are provided for the Program and Erase operations. A low V C C detector automatically inhibits write operations during power transtitions. The RY/B Y pin, DATA polling of DQ7, or toggle bit (DQ6) may be used to detect the end of the program or to erase operations. The device automatically resets to the Read mode after the Program or Erase operations are completed. DQ2 indicates which sectors are being erased. The AS29LV400 resists accidental erasure or spurious programming signals resulting from power transitions. The Control register architecture permits alteration of memory contents only when successful completion of specific command sequences has occured. During power up, the device is set to Read mode with all Program/Erase commands disabled if VCC is less than VLKO (lockout voltage). The command registers are not affected by noise pulses of less than 5 ns on OE , C E , or W E . To initiate Write commands, C E and W E must be a logical zero and O E a logical 1. When the device’s hardware RE S ET pin is driven low, any Program/Erase operation in progress is terminated and the internal state machine is reset to Read mode. If the RE S ET pin is tied to the system reset circuitry and a system reset occurs during an automated on-chip Program/Erase algorithm, the operating data in the address locations may become corrupted and require rewriting. Resetting the device enables the system’s microprocessor to read boot-up firmware from the Flash memory. The AS29LV400 uses Fowler-Nordheim tunnelling to electrically erase all bits within a sector simultaneously. Bytes are programmed one at a time using the EPROM programming mechanism of hot electron injection. 3/20/01; V.0.9.3 Alliance Semiconductor P. 2 of 25 March 2001 ® AS29LV400 Operating modes Mode ID read MFR code ID read device code Read Standby Output disable Write Enable sector protect Sector unprotect Temporary sector unprotect Verify sector protect† Hardware Reset CE L L L H L L L L X L X OE L L L X H H VID VID X L L X WE H H H X H L Pulse/L Pulse/L X H H X A0 L H A0 X X A0 L L X L L X A1 L L A1 X X A1 H H X H H X A6 L L A6 X X A6 L H X L H X A9 VID VID A9 X X A9 VID VID X VID VID X RESE T H H H H H H H H VID H H L DQ Code Code DOUT High Z High Z DIN X X X Code Code High Z Verify sector unprotect† L L = Low (VIH) = logic 1; VID = 10.0 ± 1.0V; X = don’t care. In ×16 mode, BYTE = VIH. In ×8 mode, BYTE = VIL with DQ8-DQ14 in high Z and DQ15 = A-1. † Verification of sector protect/unprotect during A9 = VID. Mode definitions Item ID MFR code, device code Read mode Description Selected by A9 = VID(9.5V–10.5V), CE = O E = A1 = A6 = L, enabling outputs. When A0 is low (VIL) the output data = 52h, a unique Mfr. code for Alliance Semiconductor Flash products. When A0 is high (VIH), DOUT represents the device code for the AS29LV400. Selected with CE = O E = L, WE = H. Data is valid in tACC time after addresses are stable, tCE after CE is low and tOE after OE is low. Selected with CE = H. Part is powered down, and ICC reduced to