ASG101

ASG101 DC-3000 MHz SiGe HBT Amplifier Features ·SiGe Technology ·22 dB Gain at 900 MHz ·+18 dBm P1dB ·+31 dBm Output IP3 ·3.0 dB Noise Figure ·Single +4.5 V Supply ·SOT-89 Surface Mount Package Description The ASG101 is designed for high linearity, high gain, and low noise over a wide range of frequency, being suitable for use in both receiver and transmitter of wireless and wireline telecommunication systems. The product is manufactured using a state-of-the-art SiGe HBT process of the company's own, making it cost-effective and highly reliable. The amplifiers are available in a low cost SOT-89 package completing stringent DC and RF tests. Package Style: SOT-89 Specifications 1) Parameters Frequency Range Gain Input VSWR Output VSWR Output IP3 2) Units MHz dB dBm dB dBm mA V 4) Min. Typ. 250 - 2500 22 1.5 1.5 Max. Applications ·CDMA, GSM, W-CDMA, PCS ·PA Driver Amplifier ·Gain Block 28 31 3.0 18 33 ·CATV Amplifier ·IF Amplifier Noise Figure Output P1dB Supply Current Supply Voltage Thermal Resistance, Rth 40 55 4.5 99.6 75 °C/W 1) Measurement conditions are as follows: T = 25°C, Vs = 4.5 V, Freq. = 900 MHz, 50 ohm system. 2) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) along an input transmission line. 3) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. 4) The thermal resistance was determined at a DC power of 0.243 W (VCC=4.5 V, IC=54 mA) with RF signal and a lead temperature of 90.3 °C. Absolute Maximum Ratings Parameters Operating Case Temperature Storage Temperature Supply Voltage Input RF Power (continuous) Rating -40 to + 85°C -40 to + 150°C 6V +6 dB above Input P1dB Remarks More Information Website: www.asb.co.kr E-mail: sales@asb.co.kr Tel: (82) 42-528-7220 Fax: (82) 42-528-7222 ASB Inc., 4th Fl. Venture Town Bldg., 367-17 Goijeong-Dong, Seo-Gu, Daejon 302-716, Korea Application Note Application circuit for 900 MHz Application circuit for 2 GHz Ordering Information Part Number ASG101 EB-ASG101-900 EB-ASG101-2000 Description High linearity medium power amplifier (Available in tape and reel) Fully assembled evaluation kit (900 MHz) Fully assembled evaluation kit (2000 MHz) 1/6 www.ASB.co.kr March. 2004 ASG101 Outline Drawing (Unit: mm) 3 a 2 2 1 Pin Description Function Input Ground Output Pin No. 1 2 3 Land Pattern Mounting Configuration (Unit: mm) Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of lead pin 2 for better RF and thermal performance, as shown in the drawing at the left side. 2/6 www.ASB.co.kr March. 2004 ASG101 Application Circuit: 900 MHz Typical Performance Frequency Magnitude S21 Magnitude S11 Magnitude S22 Output P1dB Output IP3 2) 1) 1) Schematic Vs=4.5V C4= C5= C6= 100 pF 1000 pF 1 µF 900 MHz 22 dB -16 dB -19 dB 18 dBm 31 dBm 3.0 dB 4.5 V 55 mA R1=10 kΩ RF IN C1=6 pF L1=22 nH RF OUT 50 Ω 5.5 mm L2=10nH C2=5.6 pF ASG101 50 Ω 4.5 mm C3=100pF Noise Figure Supply Voltage Current 1) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) along an input transmission line. 2) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Gain vs. Temperature 28 Board Layout (FR4, 40x40 mm2, 0.8T) Frequency = 900MHz 26 24 22 20 18 16 -60 -40 -20 0 20 40 60 80 100 S-parameters 0 -5 -10 -15 -20 -25 -30 -35 600 700 800 900 1000 1100 1200 0 + 85 Β C + 25 Β C - 40 Β C S12 (dB) -5 -10 -15 -20 -25 -30 -35 600 700 800 900 1000 1100 1200 +85 Β C +25 Β C -40 Β C S11 (dB) Frequency (MHz) Frequency (MHz) 3/6 www.ASB.co.kr March. 2004 ASG101 35 0 -5 -10 -15 -20 20 -25 -30 -35 10 600 700 800 900 1000 1100 1200 600 700 800 900 1000 1100 1200 30 + 85 Β C + 25 Β C - 40 Β C + 85 Β C + 25 Β C - 40 Β C 25 15 Output P1 vs. Frequency 26 24 Output P1dB (dBm) 22 20 18 16 14 12 10 800 + 85Β C + 25Β C - 40Β C 850 900 950 1000 Frequency (MHz) Output IP3 vs. Frequency (Pout per tone = 5 dBm) 50 Output IP3 vs. Tone Power 50 45 + 85Β C + 25Β C - 40Β C 45 Frequency = 900 MHz + 8 5Β C + 2 5Β C - 4 0Β C 40 40 35 35 30 30 25 25 800 820 840 860 880 900 920 940 2 3 4 5 6 7 8 9 4/6 www.ASB.co.kr March. 2004 ASG101 Application Circuit: 2000 MHz Typical Performance Frequency Magnitude S21 Magnitude S11 Magnitude S22 Output P1dB Output IP3 2) 1) 1) Schematic 2000 MHz 15 dB -20 dB -17 dB 18 dBm 31 dBm 4.0 dB 4.5 V 55 mA L2=22nH RF IN C1=2 pF R1=10 kΩ RF OUT L1=22 nH Vs=4.5V C4= C5= C6= 100 pF 1000 pF 1 µF Noise Figure Supply Voltage Current 50 Ω 5.5 mm C2=1.5 pF ASG101 50 Ω 4.5 mm C3=100pF 1) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) along an input transmission line. 2) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Gain vs. Temperature 20 Board Layout (FR4, 40x40 mm2, 0.8T) 18 Frequency = 2GHz 16 14 12 10 -60 -40 -20 0 20 40 60 80 100 S-parameters 0 -5 -10 -15 0 -5 -10 -15 + 85 Β C + 25 Β C - 40 Β C S11 (dB) -20 -25 -30 -35 -40 -45 1600 S12 (dB) 2400 -20 -25 -30 -35 -40 -45 1600 + 85 Β C + 25 Β C - 40 Β C 1700 1800 1900 2000 2100 2200 2300 1700 1800 1900 2000 2100 2200 2300 2400 Frequency (MHz) Frequency (MHz) 5/6 www.ASB.co.kr March. 2004 ASG101 26 24 22 20 18 16 14 12 10 8 1600 0 -5 + 85 Β C + 25 Β C - 40 Β C -10 -15 -20 -25 -30 -35 -40 -45 1600 + 85 Β C + 25 Β C - 40 Β C 1700 1800 1900 2000 2100 2200 2300 2400 1700 1800 1900 2000 2100 2200 2300 2400 Output P1 vs. Frequency 26 24 22 20 18 16 14 + 85Β C + 25Β C - 4 0Β C 1800 1850 1900 1950 2000 2050 2100 Output IP3 vs. Frequency (Pout per tone = 5 dBm) 50 50 Output IP3 vs. Tone Power 45 + 8 5Β C + 2 5Β C - 40 Β C 45 + 85 Β C + 25 Β C - 40Β C 40 40 35 35 30 30 25 1800 25 1850 1900 1950 2000 2050 2100 0 1 2 3 4 5 6 7 8 6/6 www.ASB.co.kr March. 2004