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ASG303

ASG303

  • 厂商:

    ETC

  • 封装:

  • 描述:

    ASG303 - DC-2500 MHz SiGe HBT Amplifier - List of Unclassifed Manufacturers

  • 数据手册
  • 价格&库存
ASG303 数据手册
ASG303 Features ·SiGe Technology ·19 dB Gain at 900 MHz ·+19 dBm P1dB ·+40 dBm Output IP3 ·2.9 dB Noise Figure ·MTTF > 100 Years ·Single +5 V Supply ·SOT-89 Surface Mount Package Description DC-2500 MHz SiGe HBT Amplifier The ASG303 is designed for high linearity, high gain, and low noise over a wide range of frequency, being suitable for use in both receiver and transmitter of wireless and wireline is telecommunication systems. The product 303 Package Style: SOT-89 manufactured using a state-of-the-art SiGe HBT process of the company's own, making it costeffective and highly reliable. The amplifiers are available in a low cost SOT-89 completing stringent DC and RF tests. package Specifications 1) Parameters Frequency Range Gain Input VSWR Output VSWR Output IP3 2) Units MHz dB dBm dB dBm mA V 3) Min. Typ. 250 - 2500 Max. Applications ·CDMA,GSM,W-CDMA,PCS ·Gain Block ·CATV Amplifier ·IF Amplifier ·Bluetooth Amplifier ·Wireless LAN Amplifier 18 19 1.5 1.5 38 40 2.9 19 55 5 78.2 Noise Figure Output P1dB Supply Current Supply Voltage Thermal Resistance, Rth °C/W 1) Measurement conditions are as follows: T = 25°C, VCC = 5 V, Freq. = 900 MHz, 50 ohm system. 2) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz. 3) The thermal resistance was determined at a DC power of 0.270 W (VCC=5 V, IC=54 mA) with RF signal and a lead temperature of 28.8 °C Absolute Maximum Ratings Parameters Operating Case Temperature Storage Temperature Supply Voltage Operating Junction Temperature Input RF Power (continuous) Rating -40 to +85°C -40 to +150°C 8V 150°C +6 dB above Input P1dB Remarks More Information Website: www.asb.co.kr E-mail: sales@asb.co.kr Tel: (82) 42-528-7220 Fax: (82) 42-528-7222 ASB Inc., 4th Fl. Venture Town Bldg., 367-17 Goijeong-Dong, Seo-Gu, Daejon 302-716, Korea Application Note Ordering Information Part Number ASG303 EB-ASG303-900 EB-ASG303-2000 Description High linearity medium power amplifier (Available in tape and reel) Fully assembled evaluation kit (900 MHz) Fully assembled evaluation kit (2000 MHz) 1/6 ww.ASB.co.kr March 2004 ASG303 Outline Drawing (Unit: mm) 3 a 2 2 1 Pin Description Function Input Ground Output Pin No. 1 2 3 Land Pattern Mounting Configuration (Unit: mm) Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of lead pin 2 for better RF and thermal performance, as shown in the drawing at the left side. 2/6 ww.ASB.co.kr March 2004 ASG303 Application Circuit: 900 MHz Typical Performance Frequency Magnitude S21 Magnitude S11 Magnitude S22 Output P1dB Output IP3 1) Schematic 900 MHz 19 dB -16 dB -16 dB 19 dBm 40 dBm 2.8 dB 5V 55 mA L3=33nH RF IN C4=0.1 µF C1=6 pF L1=390 nH L2=22 nH RF OUT R1=11 kΩ Vcc=5V C5= 100 pF C6= 1 µF Noise Figure Supply Voltage Current 50 Ω 7 mm C2=5 pF ASG303 C3=100pF 1) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1MHz Gain vs. Temperature 2 Board Layout (FR4, 40x40 mm , 0.8T) 24 22 20 18 16 14 12 10 Frequency = 900MHz -40 -20 0 20 40 60 80 100 S-parameters 0 -5 -10 -15 -20 -25 0 -5 -10 -15 -20 -25 -30 -35 600 700 800 900 1000 1100 1200 8 5Β C 2 5Β C -40Β C 85 Β C 25 Β C -40Β C -30 -35 600 700 800 900 1000 1100 1200 3/6 ww.ASB.co.kr March 2004 ASG303 30 0 -5 -10 -15 -20 -25 10 -30 5 -35 600 700 800 900 1000 1100 1200 25 85 Β C 25 Β C -40Β C 20 15 85 Β C 25 Β C -40Β C 600 700 800 900 1000 1100 1200 OP1 vs. Frequency 28 26 24 22 20 18 16 14 12 800 850 900 950 1000 85 Β C 25 Β C -40Β C Output IP3 vs. Frequency (Pout per tone = 8dBm) 55 55 Output IP3 vs. Tone Power (Frequency = 900MHz) 50 45 85 Β C 25 Β C -40Β C 50 45 85 Β C 25 Β C -40Β C 40 40 35 35 30 30 800 850 900 950 1000 4 5 6 7 8 9 10 11 12 4/6 ww.ASB.co.kr March 2004 Application Circuit: 2000 MHz Typical Performance Frequency Magnitude S21 Magnitude S11 Magnitude S22 Output P1dB Output IP3 1) Schematic 2000 MHz 12.5 dB -24 dB -23 dB 19 dBm 40 dBm 3.3 dB 5V 55 mA L3=22nH C2=0.75 pF RF IN C5=0.1 µF L1=100 nH L2=10 nH R1=11 kΩ Vcc=5 V C6= 100 pF C7= 1 µF Noise Figure Supply Voltage Current C1=1 pF RF OUT 50 Ω 3 mm ASG303 C3=100pF C4=0.5 pF 1) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz. Gain vs. Temperature 20 Board Layout (FR4, 40x40 mm2, 0.8T) 18 Frequency = 2GHz 16 14 12 10 8 -40 -20 0 20 40 60 80 100 S-parameters 0 0 -10 -10 -20 -20 -30 -40 85 Β C 25 Β C -40Β C -30 -40 85 Β C 25 Β C -40Β C -50 -50 1700 1800 1900 2000 2100 2200 2300 1700 1800 1900 2000 2100 2200 2300 5/6 ww.ASB.co.kr March 2004 ASG303 30 0 25 85 Β C 25 Β C -40Β C -10 20 -20 15 -30 10 -40 8 5Β C 2 5Β C -40Β C 5 -50 1700 1800 1900 2000 2100 2200 2300 1700 1800 1900 2000 2100 2200 2300 OP1 vs. Frequency 26 24 22 20 18 16 14 12 1800 1850 1900 1950 2000 2050 2100 8 5Β C 2 5Β C -40Β C Output IP3 vs. Frequency (Pout per tone = 8dBm) 55 Output IP3 vs. Tone Power (Frequency = 2000MHz) 55 50 45 85 Β C 25 Β C -40Β C 50 85 Β C 25 Β C -40Β C 45 40 40 35 35 30 30 25 25 1800 1850 1900 1950 2000 2050 2100 5 6 7 8 9 10 11 12 13 6/6 ww.ASB.co.kr March 2004
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