BDX64C

BDX 64, A, B, C PNP SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol VCEO Collector-Emitter Voltage Ratings BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C Value -60 -80 -100 -120 -60 -80 -100 -120 -5.0 Unit V VCEV Collector-EmitterVoltage VBE=-1.5 V V VEBO Emitter-Base Voltage V IC(RMS) IC Collector Current -12 A -16 ICM COMSET SEMICONDUCTORS 1/5 BDX 64, A, B, C Symbol IB Base Current Ratings BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C Value 0.2 Unit A PT Power Dissipation @ TC = 25° 117 Watts W/°C TJ TS Junction Temperature Storage Temperature -55 to +200 °C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case BDX64 BDX64A BDX64B BDX64C Value 1.5 Unit °C/W COMSET SEMICONDUCTORS 2/5 BDX 64, A, B, C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit BDX64 -60 - - BDX64A -80 - V VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=-0.1 A, IB=0, L=25mH BDX64B -100 - - BDX64C -120 - - VCE=-30 V BDX64 - - VCE=-40 V BDX64A - -1.0 mA ICEO Collector Cutoff Current VCE=-50 V BDX64B - - VCE=-60 V BDX64C BDX64 BDX64A BDX64B BDX64C - - IEBO Emitter Cutoff Current VBE=-5 V - - -5.0 mA COMSET SEMICONDUCTORS 3/5 BDX 64, A, B, C Symbol Ratings Test Condition(s) Min Typ Mx Unit VCBO=-60 V BDX64 - 0.2 VCBO=-60 V TCASE=150°C - - 2 VCBO=-80 V BDX64A - 0.2 - ICBO Collector-Base Cutoff Current VCBO=-80 V TCASE=150°C - - 2 VCBO=-100 V BDX64B - 0.2 VCBO=-100 V TCASE=150°C - - 2 VCBO=-120 V BDX64C - 0.2 VCBO=-120 V TCASE=150° BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C 2 VCE(SAT) Collector-Emitter saturation Voltage (*) IC=-5.0 A, IB=-20 mA - - -2 V VF Forward Voltage (pulse method) IF=5 A - 1.8 - V VBE Base-Emitter Voltage (*) IC=-5.0 A, VCE=-3V - - -2.5 V Fh21e Forward current transfer ratio Cutoff frequency VCE=3 V, IC=5 A - 60 - KHz COMSET SEMICONDUCTORS 4/5 BDX 64, A, B, C Symbol Ratings Test Condition(s) BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C Min Typ Mx Unit fT Transition Frequency VCE=-3 V, IC=-5 A, f=1 MHz - 7 - MHz VCE=-3 V, IC=-1 A - 1500 - h21E Static forward current transfer ratio (*) VCE=-3 V, IC=-5 A 1000 - - - VCE=-3 V, IC=-12 A - 750 - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Collector Emitter COMSET SEMICONDUCTORS 5/5