BDY25

BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol VCEO Collector-Emitter Voltage Ratings BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 181T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 Value 60 90 140 60 100 200 10 6 Unit V VCBO VEBO IC IB PTOT TJ TStg Collector-Base Voltage V V A A Watts Emitter-Base Voltage Collector Current Base Current 3 Power Dissipation Junction Temperature Storage Temperature @ TC = 25° 87.5 200 -65 to +200 °C COMSET SEMICONDUCTORS 1/4 BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 Value 2 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) BDY23, 180T2 Min Typ Mx Unit 60 90 140 60 100 200 - 1.0 mA V V VCEO(BR) IC=50 mA, IB=0 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 V(BR)CBO Collector-Base Breakdown Voltage (*) Collector-Emitter Cutoff Current IC=3 mA VCE=60 V VCE=90 V VCE=140 V BDY24, 181T2 BDY25, 182T2 BDY23 BDY24 BDY25 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 ICEO - IEBO Emitter-Base Cutoff Current VEB=10 V 1.0 mA VCE=60 V VBE=0 V - - 0.5 ICES Collector-Emitter Cutoff Current VCE=100 V VBE=0 V VCE=180 V VBE=0 V BDY24, 181T2 - - 1.0 mA BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 - - 1.0 1 0.6 0.6 VCE(SAT) Collector-Emitter saturation Voltage (*) IC=2.0 A, IB=0.25 A V COMSET SEMICONDUCTORS 2/4 BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 Symbol VBE(SAT) Ratings Base-Emitter Voltage (*) Test Condition(s) BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 A B C A B C BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 Min Typ Mx Unit - IC=2.0 A, IB=0.25 A 55 65 90 20 45 82 - 2.0 1.2 1.2 45 90 100 - V VCE=4 V, IC=1 A h21E Static Forward Current transfer ratio (*) VCE=4 V, IC=2 A 15 30 75 10 - fT Transition Frequency VCE=15 V, IC=0.5 A, f=10 MHz MHz td + tr Turn-on time IC=5 A, IB=1 A IC=5 A, IB1=1 A, IB2=-0.5 A - 0.3 0.5 µs ts + tf Turn-off time - 1.5 2.0 µs (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% COMSET SEMICONDUCTORS 3/4 BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm inches 25,45 1 38,8 1,52 30,09 1,184 17,11 0,67 9,78 0,38 11,09 0,43 8,33 0,32 1,62 0,06 19,43 0,76 1 0,04 4,08 0,16 Base Collector Emitter COMSET SEMICONDUCTORS 4/4