BDY28

BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol VCEO Collector-Emitter Voltage Ratings BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 Value 180 200 250 300 400 500 10 6 Unit V VCBO VEBO IC IB PTOT TJ TStg Collector-Base Voltage V V A A Watts Emitter-Base Voltage Collector Current Base Current 3 Power Dissipation Junction Temperature Storage Temperature @ TC = 25° 87.5 200 -65 to +200 °C COMSET SEMICONDUCTORS 1/4 BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 Value 2 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) BDY26, 183T2 BDY27, 184T2 BDY28A, 185T2A BDY28B, 185T2B BDY28C, 185T2C BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26 BDY27 BDY28 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 Min Typ Mx Unit 180 200 250 250 220 300 400 500 - VCEO(BR) IC=50 mA, IB=0 1.0 V V(BR)CBO Collector-Base Breakdown Voltage (*) Collector-Emitter Cutoff Current IC=3 mA VCE=180 V VCE=200 V VCE=250 V V ICEO - mA IEBO Emitter-Base Cutoff Current VEB=10 V 1.0 mA VCE=250 V VBE=0 V - - ICES Collector-Emitter Cutoff Current VCE=300 V VBE=0 V VCE=400 V VBE=0 V BDY27, 184T2 - - 1.0 mA BDY28, 185T2 - - COMSET SEMICONDUCTORS 2/4 BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 Symbol VCE(SAT) Ratings Collector-Emitter saturation Voltage (*) Test Condition(s) IC=2.0 A, IB=0.25 A Min Typ Mx Unit - VBE(SAT) Base-Emitter Voltage (*) IC=2.0 A, IB=0.25 A BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 A B C A B C BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 55 65 90 20 45 82 - 0.6 V 1.2 45 90 100 - V VCE=4 V, IC=1 A h21E Static Forward Current transfer ratio (*) VCE=4 V, IC=2 A 15 30 75 10 - fT Transition Frequency VCE=15 V, IC=0.5 A, f=10 MHz MHz td + tr Turn-on time IC=5 A, IB=1 A IC=5 A, IB1=1 A, IB2=-0.5 A - 0.3 0.5 µs ts + tf Turn-off time - 1.5 2.0 µs (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% COMSET SEMICONDUCTORS 3/4 BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 MECHANICAL DATA CASE TO-3 DIMENSIONS mm A 25,45 B 38,8 C 30,09 D 17,11 E 9,78 G 11,09 H 8,33 L 1,62 M 19,43 N 1 P 4,08 inches 1 1,52 1,18 0,67 0,39 0,45 0,34 0,06 0,79 0,04 0,16 Pin 1 : Pin 2 : Case : Base Collector Emitter COMSET SEMICONDUCTORS 4/4