.
BDY53 – BDY54 NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification High Current Fast Switching
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO VCBO VEBO IC IB PTOT TJ TStg
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature
Ratings
BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 @ TC = 25° BDY53 BDY54 BDY53 BDY54 BDY53 BDY54
Value
60 120 100 180 7
12 5
Unit
V V V A A Watts °C °C
60 200 -65 to +200
COMSET SEMICONDUCTORS
1/3
BDY53 – BDY54
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS) IEBO
Ratings
Collector-Emitter Breakdown Voltage (*)
Test Condition(s)
IC=100 mA, IB=0
Min Typ Mx Unit
60 120 3.0 V
BDY53 BDY54 BDY53 BDY54
Emitter-Base Cutoff Current VEB=7 V
VCE=100 V VBE=-1.5 V TCASE=150°C VCE=150 V VBE=-1.5 V TCASE=150°C IC=4.0 A, IB=0.4 A IC=7.0 A, IB=1.4 A IC=4.0 A, IB=0.4 A
mA
ICEX
Collector-Emitter Cutoff Current
BDY53
-
15 mA
BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54 BDY53 BDY54
20
1.1 V 2.2 2 V 2.5 60 V
VCE(SAT)
Collector-Emitter saturation Voltage (*)
VBE(SAT)
Base-Emitter Voltage (*)
IC=7.0 A, IB=1.4 A
h21E
Static Forward Current transfer ratio (*)
VCE=1.5 V, IC=2 A
fT
Transition Frequency
VCE=4.0 V, IC=0.5 A, f=10 MHz
20
-
-
MHz
td + tr
Turn-on time
IC=5 A, IB=1 A
-
0.3
-
µs
ts + tf
Turn-off time
IC=5 A, IB1=1 A, IB2=-0.5 A
-
1.8
-
µs
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
COMSET SEMICONDUCTORS
2/3
BDY53 – BDY54
MECHANICAL DATA CASE TO-3
DIMENSIONS
A B C D E G H L M N P mm inches 25,45 1 38,8 1,52 30,09 1,184 17,11 0,67 9,78 0,38 11,09 0,43 8,33 0,32 1,62 0,06 19,43 0,76 1 0,04 4,08 0,16
Pin 1 : Pin 2 : Case :
Base Collector Emitter
COMSET SEMICONDUCTORS
3/3
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