BMT1720B20

BIPOLARICS, INC Part Number BMT1720B20 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base, Class C Package Configuration • High Output Power 20 W @ 1.7 to 2.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 3200 mA t • High Gain GPE = 7.0 dB to 8.2 dB • High Reliability Gold Metallization Nitride Passivation • Diffused Ballast Resistors • BeO Package • Built-In Matching Network Absolute Maximum Ratings: SYMBOL PARAMETERS RATING UNITS VCBO VCEO VEBO IC T J Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (instantaneous) Junction Temperature Storage Temperature Thermal Resistance 50 28 3.5 3200 200 -65 to 200 6.5 V V V mA o o for Broadband Operation PERFORMANCE DATA: • Electrical Characteristics (TA = 25oC) SYMBOL PARAMETERS & CONDITIONS VCE =28V, I C = 3200 mA, Class C C TSTG C θJC C/W UNIT MIN. TYP. MAX. P1dB Power output at 1 dB compression: f = 1.7 GHz W 20 η hFE Collector Efficiency Class C % 50 Forward Current Transfer Ratio: VCB = 5V, IC = 100 mA 10 60 100 COB Output Capacitance: f = 1 MHz, I E = 0 pF 4.5 PT Total Power Dissipation W 40 PAGE 2 BIPOLARICS, INC. Part Number BMT1720B20 SILICON MICROWAVE POWER TRANSISTOR PAGE 3 BIPOLARICS, INC. Part Number BMT1720B20 SILICON MICROWAVE POWER TRANSISTOR PAGE 4 BIPOLARICS, INC. Part Number BMT1720B20 SILICON MICROWAVE POWER TRANSISTOR PAGE 5 BIPOLARICS, INC. Part Number BMT1720B20 SILICON MICROWAVE POWER TRANSISTOR 25 Package: 0.250" 2 Lead Flange NOTES: (unless otherwise specified) in 1. Dimensions are (mm) 2. Tolerances: in .xxx = ± .005 mm .xx = ± .13 3. All dimensions nominal; subject to change without notice LEAD 25 Package 1 Emitter 2 Base 3 Collector 4 Base BIPOLARICS, INC. 602 Charcot Ave. San Jose, CA 94538 Phone: (408) 456-0430 FAX: (408) 456-0431