BSS66R

SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 1995 7 PARTMARKING DETAILS — BSS66 BSS67 BSS66R BSS67R M6 M7 M8 M9 SYMBOL VCBO VCEO VEBO ICM IC IB PTOT t j:tstg MIN. 40 60 6 50 0.20 0.30 0.65 20 35 50 30 15 40 70 100 60 30 250 300 4 8 Typ. 6 35 200 50 0.85 0.95 BSS66 BSS67 C B VALUE 60 40 6 200 100 50 330 -55 to +150 UNIT V V V mA mA mA mW °C E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO V(BR)EBO ICES VCE(sat) VBE(sat) hFE ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). Collector-Emitter Breakdown Voltage V(BR)CEO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector- Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio BSS66 MAX. UNIT V V V nA V V V V CONDITIONS. IC=1mA IC=10µA IE=10µA VCES=30V IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, 150 Static Forward Current Transfer Ratio BSS67 hFE 300 Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Noise Figure BSS66 BSS67 fT Cobo Cibo N td; tf ts tf MHz MHz pF pF dB ns ns ns IC=10mA, VCE=20V f=100MHz VCB=5V, f=100kHz VEB=0.5V, f=100kHz IC=100µA, VCE=5V RS=1kΩ, f=10Hz to15.7 kHz VCC=3V, IC=10mA IB1= IB2 =1mA Switching times: Delay; Rise Storage Time Fall Time * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PAGE NUMBER