BSS70

SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 1995 7 PARTMARKING DETAILS — BSS69 BSS70 BSS69R BSS70R L2 L3 L6 L7 SYMBOL VCBO VCEO VEBO ICM IC IB PTOT t j:tstg MIN. -40 -40 -5 -50 -0.25 -0.40 -0.65 30 40 50 30 15 60 80 100 60 30 200 250 4.5 10 Typ. 5 35 225 70 -0.85 -0.95 BSS69 BSS70 C B VALUE -40 -40 -5 -200 -100 -50 330 -55 to +150 UNIT V V V mA mA mA mW °C E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO V(BR)EBO ICES VCE(sat) VBE(sat) hFE ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). Collector-Emitter Breakdown Voltage V(BR)CEO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector- Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio BSS69 MAX. UNIT V V V nA V V V V CONDITIONS. IC=-1mA IC=-10µA IE=-10µA VCES=-30V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1V IC=-50mA*, IC=-100mA*, IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1V IC=-50mA*, IC=-100mA*, 150 Static Forward Current Transfer Ratio BSS70 hFE 300 Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Noise Figure BSS69 BSS70 fT Cobo Cibo N td; tf ts tf MHz MHz pF pF dB ns ns ns IC=-10mA, VCE=-20V f=100MHz VCB=-5V, f=100kHz VEB=-0.5V, f=100kHz IC=-100µΑ, VCE=-5V RS=1kΩ, f=10Hz to15.7 kHz VCC=-3V, IC=-10mA IB1= IB2 =-1mA Switching times: Delay; Rise Storage Time Fall Time *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% PAGE NUMBER