BUZ900DP

MAGNA TEC 20.0 5.0 BUZ900DP BUZ901DP MECHANICAL DATA Dimensions in mm 3.3 Dia. N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2.0 2 3 2.0 1.0 • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING 1.2 0.6 2.8 3.4 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE AS BUZ905DP & BUZ906DP • DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE 5.45 5.45 TO–3PBL Pin 1 – Gate Pin 2 – Source Case is Source Pin 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate – Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction – Case @ Tcase = 25°C BUZ900DP 160V 16A 16A 250W –55 to 150°C 150°C 0.5°C/W BUZ901DP 200V ±14V Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 2/95 MAGNA TEC Characteristic BVDSX BVGSS VGS(OFF) VDS(SAT)* Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Gate – Source Cut–Off Voltage Drain – Source Saturation Voltage BUZ900DP BUZ901DP STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Test Conditions VGS = –10V ID = 10mA VDS = 0 VDS = 10V VGD = 0 BUZ900DP BUZ901DP IG = ±100µA ID = 100mA ID = 16A VDS = 160V IDSX Drain – Source Cut–Off Current VGS = –10V BUZ900DP VDS = 200V BUZ901DP yfs* Forward Transfer Admittance VDS = 10V ID = 3A 1.4 Min. 160 200 ±14 0.1 Typ. Max. Unit V V 1.5 12 10 V V mA 10 4 S DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Characteristic Ciss Coss Crss ton toff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–on Time Turn-off Time Test Conditions VDS = 10V f = 1MHz VDS = 20V ID = 7A Min. Typ. 950 550 18 160 80 Max. Unit pF ns * Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2%. 300 Derating Chart 250 CH AN NE L D ISS IP ATION (W ) 200 150 100 50 0 0 25 50 75 100 125 150 TC — CASE TEMPERATURE (˚C) Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 2/95 MAGNA TEC 22 20 18 I D — D R AIN C U RR EN T (A) 7V BUZ900DP BUZ901DP Typical Output Characteristics TC = 25˚C 22 20 18 I D — D R AIN C U RR EN T (A) Typical Output Characteristics TC = 75˚C 16 6V 16 14 12 7V 6V 14 5V 12 PC 5V PC 10 8 6 H = 25 10 8 6 4 H = 4V 0W 25 4V 0W 3V 3V 4 2 0 0 10 20 30 40 50 2V 2V 1V 2 0 60 70 0 10 20 30 40 50 1V 60 70 V DS — DRAIN – SOURCE VOLTAGE (V) V DS — DRAIN – SOURCE VOLTAGE (V) 100 Forward Bias Safe Operating Area TC = 25˚C G FS — TRA NSC ON D UC TAN CE (S) 100 V DS = 20V Transconductance I D — D R AIN C U RR EN T (A) 10 DC 10 TC = 25˚C TC = 75˚C OP ER AT IO N 1 BUZ900D BUZ901D 1 160V 0.1 1 10 100 200V 0.1 1000 0 2 4 6 8 10 12 14 16 V DS — DRAIN – SOURCE VOLTAGE (V) I D — DRAIN CURRENT (A) Drain – Source Voltage vs 16 14 V DS — DR AIN – S OU RC E V OLTAGE (V ) Gate – Source Voltage TC = 25˚C 22 20 18 Typical Transfer Characteristics V DS = 10V TC = 25˚C 12 I D — D RA IN C UR R EN T (A) 16 14 12 10 8 6 4 2 0 TC = 75˚C TC = 100˚C 10 8 6 I D = 9A I D = 14A 4 I D = 5A 2 I D = 3A 0 1 2 3 4 5 6 7 8 9 V GS — GATE – SOURCE VOLTAGE (V) 0 1 2 3 4 5 6 7 8 9 10 11 V GS — GATE – SOURCE VOLTAGE (V) Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 2/95