BUZ906P

MAGNA TEC 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) BUZ905P BUZ906P MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) 4.50 (0.177) M ax. 1 2 3 1 .65 (0.065) 2.13 (0.084) 2 .87 (0.113) 3.12 (0.123) FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900P & BUZ901P 0 .40 (0.016) 0.79 (0.031) 19.81 (0.780) 20.32 (0.800) 1.01 (0.040) 1.40 (0.055) 2.21 (0.087) 2.59 (0.102) 5.25 (0.215) BSC TO–247 Pin 1 – Gate Pin 2 – Source Pin 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate – Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction – Case @ Tcase = 25°C BUZ905P -160V ±14V -8A -8A 125W –55 to 150°C 150°C 1.0°C/W BUZ906P -200V Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94 MAGNA TEC Characteristic BVDSX BVGSS VGS(OFF) VDS(SAT)* Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Gate – Source Cut–Off Voltage Drain – Source Saturation Voltage BUZ905P BUZ906P STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Test Conditions VGS = 10V ID = -10mA VDS = 0 VDS = -10V VGD = 0 BUZ905P BUZ906P IG = ±100µA ID = -100mA ID = -8A VDS = -160V IDSX Drain – Source Cut–Off Current VGS = -10V BUZ905P VDS = -200V BUZ906P yfs* Forward Transfer Admittance VDS = -10V ID = -3A 0.7 Min. -160 -200 ±14 -0.15 Typ. Max. Unit V V -1.5 -12 -10 V V mA -10 2 S DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Characteristic Ciss Coss Crss ton toff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–on Time Turn-off Time Test Conditions VDS = 10V f = 1MHz VDS = -20V ID = -5A Min. Typ. 734 300 26 120 60 Max. Unit pF ns * Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2%. 150 Derating Chart 125 CH AN NE L D ISS IP ATION (W ) 100 75 50 25 0 0 25 50 75 100 125 150 TC — CASE TEMPERATURE (˚C) Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94 MAGNA TEC -9 -8 -7 I D — D R AIN C U RR EN T (A) -6V BUZ905P BUZ906P Typical Output Characteristics -7V -9 -8 -7 I D — D R AIN C U RR EN T (A) Typical Output Characteristics TC = 75˚C -7V TC = 25˚C -6 -5V -6 -5 -4 -3 -2 -6V -5 = P CH -5V = P CH -4 -3 -4V 12 5W -3V 12 -4V 5W -2 -2V -3V -1 -1 -2V 0 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 V DS — DRAIN – SOURCE VOLTAGE (V) 0 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 V DS — DRAIN – SOURCE VOLTAGE (V) -10 Forward Bias Safe Operating Area DC TC = 25˚C 100 V DS = -20V G FS — TR AN SC ON DU C TAN CE (S) Transconductance OP ER AT I D — D R AIN C U RR EN T (A) IO N -1 10 TC = 25˚C TC = 75˚C -0.1 BUZ905 BUZ906 1 160V -0.01 -1 -10 -100 200V 0.1 -1000 0 -1 -2 -3 -4 -5 -6 -7 -8 V DS — DRAIN – SOURCE VOLTAGE (V) I D — DRAIN CURRENT (A) Drain – Source Voltage vs -10 Gate – Source Voltage TC = 25˚C -9 -8 -7 I D — D RA IN C UR R EN T (A) Typical Transfer Characteristics V DS = -10V V DS — DR AIN – S OU RC E V OLTA GE (V ) -8 I D = -6A TC = 25˚C -6 -5 -4 -3 -2 TC = 75˚C TC = 100˚C -6 -4 I D = -3A -2 I D = -1A -1 0 0 -2 -4 -6 -8 -10 -12 -14 V GS — GATE – SOURCE VOLTAGE (V) 0 0 -1 -2 -3 -4 -5 -6 -7 -8 V GS — GATE – SOURCE VOLTAGE (V) Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94