CMT04N60N220FP

CMT04N60 POWER MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURES ! ! ! ! ! ! Higher Current Rating Lower Rds(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PIN CONFIGURATION TO-220/TO-220FP SYMBOL D Top View G ATE SOU RCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current － Continuous － Pulsed Gate-to-Source Voltage － Continue － Non-repetitive Total Power Dissipation TO-220 TO-220FP Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ (VDD = 100V, VGS = 10V, IL = 4A, L = 10mH, RG = 25Ω) Thermal Resistance － Junction to Case － Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds θJC θJA TL 1.30 100 260 ℃ ℃/W TJ, TSTG EAS Symbol ID IDM VGS VGSM PD 96 38 -55 to 150 80 ℃ mJ Value 4.0 14 ±20 ±40 V V W Unit A 2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 1 CMT04N60 POWER MOSFET ORDERING INFORMATION Part Number CMT04N60N220 CMT04N60N220FP Package TO-220 TO-220 Full Package ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT04N60 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) Drain-Source Leakage Current (VDS =600 V, VGS = 0 V) Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 μA) Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.0A) * Forward Transconductance (VDS = 50 V, ID = 2.0 A) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 300 V, ID = 4.0 A, VGS = 10 V, RG = 9.1Ω) * (VDS = 480 V, ID = 4.0 A, VGS = 10 V)* Symbol V(BR)DSS IDSS 0.1 IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS 2.5 540 125 8.0 12 7.0 19 10 5.0 2.7 2.0 4.5 7.5 760 180 20 20 10 40 20 10 2.0 100 100 4.0 2.4 nA nA V Ω mhos pF pF pF ns ns ns ns nC nC nC nH nH Min 600 Typ Max Units V mA Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 4.0 A, dIS/dt = 100A/µs) VSD ton trr ** 655 1.5 V ns ns * Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance 2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 2 CMT04N60 POWER MOSFET TYPICAL CHARACTERISTICS 2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 3 CMT04N60 POWER MOSFET 2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 4 CMT04N60 POWER MOSFET TO-220 TO-220FP 2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 5 CMT04N60 POWER MOSFET PACKAGE DIMENSION TO-220 D A c1 φ F E PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 A A1 L1 b b1 c c1 D L E E1 e e1 F L b1 e1 e b A1 c Side View L1 φ Front View TO-220FP C J D Q H R1 .5 0 R1 .5 0 B .1 ±0 .18 R3 0 I A B A C D E E P K O G H I J K M N O P Q 0 .6 R1 G b R b b1 b2 e b1 e Front View b2 R N M Side View Back View 2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 6 CMT04N60 POWER MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for Use of CMC products in such applications is In order to minimize risks associated with the customer’s applications, the use in life-support applications, devices or systems or other critical applications. understood to be fully at the risk of the customer. customer should provide adequate design and operating safeguards. HsinChu Headquarter 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 Sales & Marketing 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 7