CMT4410

CMT4410 N-CHANNEL 30V MOSFET STRUCTURE ! FEATURES ! ! ! Silicon N-channel MOSFET Low Qg Low on-resistance Excellent resistance to damage from static electricity PIN CONFIGURATION 8-PIN SOP (S08) SYMBOL D R AIN Top View 1 2 3 4 SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN 8 7 6 5 G AT E * SOURCE N-Channel MOSFET * Gate Protection Diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltage are exceeded. ORDERING INFORMATION Part Number CMT4410 Package 8-PIN SOP (S08) ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) Rating Drain-to-Source Voltage Drain to Current － Continuous (at 25℃) － Pulsed* Reverse Drain to Current － Continuous (at 25℃) － Pulsed* Source Current (Body Diode) － Continuous (at 25℃) － Pulsed* Gate-to-Source Voltage － Continue Total Power Dissipation (TC = 25℃) Storage Temperature Range Channel Temperature * Pw≦10ms, Duty cycle≦1% Symbol VDS ID IDP IR IDRP IS ISP VGS PD TSTG Tch Value 30 10 40 10 40 1.3 5.2 ±20 2.0 -55 to 150 150 V W ℃ ℃ A A Unit V A 2001/06/18 Draft Champion Microelectronic Corporation Page 1 CMT4410 N-CHANNEL 30V MOSFET THERMAL RESISTANCE (Ta = 25℃) Parameter Channel to Ambient Symbol Rth(ch-A) Limits 62.5 Unit ℃/W ELECTRICAL CHARACTERISTICS Unless otherwise specified, Ta = 25℃. CMT4410 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 1mA) Zero Gate Voltage Drain Current (VDS = 30 V, VGS = 0 V) Gate-Source Leakage Current (Vgs = ±20 V, VDS = 0 V) Gate Threshold Voltage (VDS =10V, ID = 1mA) Static Drain-Source On-Resistance (VGS = 10 V, ID = 10A) (VGS = 4.5 V, ID = 10A) (VGS = 4.0 V, ID = 10A) Forward Transfer Admittance (VDS = 10V, ID = 10A) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time ** Total Gate Charge Gate-Source Charge Gate-Drain Charge * Pulsed (VDS = 10 V, f = 1MHz, VGS = 0 V)* (VDD = 15 V, ID = 5 A, VGS = 10 V, RL = 3Ω, RGS = 10Ω) * IF = 2.3A, di/dt = 100A/µs (VDD = 15 V, ID = 10 A, VGS = 10 V)* Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) 9 13 15 |YFS| Ciss Coss Crss td(on) tr td(off) tf tfr Qg Qgs Qgd 10 1750 950 450 20 55 100 70 50 44.8 5.9 12.2 80 89.6 12 18 20 mhos pF pF pF ns ns ns ns ns nC nC nC 1.0 Min 30 10 ±10 2.5 Typ Max Units V μA μA V mΩ BODY DIODE CHARACTERISTICS (SOURCE-DRAIN) Unless otherwise specified, Ta = 25℃. CMT4410 Characteristic Forward Voltage (VGS = 0 V, IS = 5.2A)* Reverse Recovery Time Reverse Recovery Charge (VGS = 0V, IDR = 5.2 A, di/dt = 100A/µs)* Symbol VSD trr Qrr 240 310 Min Typ Max 1.5 Units V ns nC 2001/06/18 Draft Champion Microelectronic Corporation Page 2 CMT4410 N-CHANNEL 30V MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 2001/06/18 Draft Champion Microelectronic Corporation Page 3 CMT4410 N-CHANNEL 30V MOSFET TYPICAL ELECTRICAL CHARACTERISTICS (Conti.) 2001/06/18 Draft Champion Microelectronic Corporation Page 4 CMT4410 N-CHANNEL 30V MOSFET PACKAGE DIMENSION 8-PIN SOP (S08) PIN 1 ID θ θ 2001/06/18 Draft Champion Microelectronic Corporation Page 5 CMT4410 N-CHANNEL 30V MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for Use of CMC products in such applications is In order to minimize risks associated with the customer’s applications, the use in life-support applications, devices or systems or other critical applications. understood to be fully at the risk of the customer. customer should provide adequate design and operating safeguards. HsinChu Headquarter 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 Sales & Marketing 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 2001/06/18 Draft Champion Microelectronic Corporation Page 6