CMT60N06

CMT60N06 N-CHANNEL Logic Level Power MOSFET APPLICATION DC motor control UPS Class D Amplifier VDSS 60V RDS(ON) Typ. 15.8mΩ ID 60A FEATURES Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves PIN CONFIGURATION TO-220 SYMBOL D Front View GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Source Voltage (Note 1) Drain to Current － Continuous Tc = 25℃, VGS@10V － Continuous Tc = 100℃, VGS@10V － Pulsed Tc = 25℃, VGS@10V (Note 2) Gate-to-Source Voltage － Continue Total Power Dissipation Derating Factor above 25℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Single Pulse Avalanche Energy L=144µH,ID=40 Amps Maximum Lead Temperature for Soldering Purposes Maximum Package Body for 10 seconds Pulsed Avalanche Rating dv/dt TJ, TSTG EAS TL TPKG IAS Symbol VDSS ID ID IDM VGS PD Value 60 60 43 241 ±20 150 1.0 4.5 -55 to 175 500 300 260 60 V W W/℃ V/ns ℃ mJ ℃ ℃ A Unit V A THERMAL RESISTANCE Symbol RθJC RθJA Parameter Junction-to-case Junction-to-ambient Min Typ Max 1.0 62 Units ℃/W ℃/W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +175℃ 1 cubic foot chamber, free air 2004/05/28 Preliminary rev.0.1 Champion Microelectronic Corporation Page 1 CMT60N06 N-CHANNEL Logic Level Power MOSFET ORDERING INFORMATION Part Number CMT60N06 Package TO-220 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT60N06 Characteristic OFF Characteristics Drain-to-Source Breakdown Voltage (VGS = 0 V, ID = 250 µA) Breakdown Voltage Temperature Coefficient (Reference to 25℃, ID = 250 µA) Drain-to-Source Leakage Current (VDS = 60 V, VGS = 0 V, TJ = 25℃) (VDS = 48 V, VGS = 0 V, TJ = 150℃) Gate-to-Source Forward Leakage (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) ON Characteristics Gate Threshold Voltage (VDS = VGS, ID = 250 µA) Static Drain-to-Source On-Resistance (VGS = 10 V, ID = 60A) Forward Transconductance (VDS = 15 V, ID = 60A) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (VGS = 10 V) Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge (IS = 60 A, VGS = 0 V) (IF = 60A, VGS = 0 V, di/dt = 100A/µs) Integral pn-diode in MOSFET ISM VSD trr Qrr 55 110 241 1.5 A V ns nC (Note 4) Dynamic Characteristics (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDS = 30 V, ID = 60 A, VGS = 10 V) (Note 5) Ciss Coss Crss Qg Qgs Qgd Resistive Switching Characteristics (VDD = 30 V, ID = 60 A, VGS = 10 V, RG = 9.1Ω) (Note 5) td(on) trise td(off) tfall IS 12.1 64 69 39 60 ns ns ns ns A 1430 420 88 37.7 8.4 9.8 pF pF pF nC nC nC gFS (Note 4) RDS(on) 15.8 36 18 S mΩ VGS(th) 1.0 2.0 3.0 V IGSS -100 nA IGSS IDSS 25 250 100 nA µA ΔVDSS/∆TJ 0.069 mV/℃ VDSS 60 V Symbol Min Typ Max Units Source-Drain Diode Characteristics 2004/05/28 Preliminary rev.0.1 Champion Microelectronic Corporation Page 2 CMT60N06 N-CHANNEL Logic Level Power MOSFET Note 1: TJ = +25℃ to +175℃ Note 2: Repetitive rating; pulse width limited by maximum junction temperature. Note 3: ISD = 60A, di/dt