EE-SB5M

EE-SB5M

  • 厂商:

    ETC

  • 封装:

  • 描述:

    EE-SB5M - Photomicrosensor with 80-mA Switching Capacity that can be Built into Equipment - List of ...

  • 详情介绍
  • 数据手册
  • 价格&库存
EE-SB5M 数据手册
 EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E Photomicrosensor with 80-mA Switching Capacity that can be Built into Equipment  Built-in amplifier  Models available with 5- to 12-VDC and 5- to 15-VDC input  CMOS- and TTL-compatible  Model with easy adjustment with an external sensitivity adjuster (EE-SB5V)  Special connectors (EE-1001/1006) are available  19-mm sensing distance (EE-SB5V-E)  Convert to PNP output with EE-2002 conversion connector Ordering Information Appearance Sensing method Reflective Sensing distance 5 mm Output configuration Light-ON Dark-ON Light-ON Dark-ON 19 mm Light-ON Approx. 2.8 g Weight Approx. 3.0 g Part number EE-SB5M EE-SB5MC EE-SB5V EE-SB5VC EE-SB5V-E Specifications  RATINGS Item Supply voltage Current consumption Maximum forward direct current (IF) Forward voltage (VF) Reverse voltage (VR) Standard reference object Differential distance Reflective EE-SB5M 36 mA max. — — — 0.1 mm (This table continues on the next page.) EE-SB5MC EE-SB5V(-E) EE-SB5VC 5 to 12 VDC ±10%, ripple (p-p): 10% max. 5 to 15 VDC ±10%, ripple (p-p): 10% max. 48 mA max. (DC current: IF = 25 mA) 30 mA max. 1.5 V max. (IF = 30 mA) 4 V max. White paper with reflection factor of 90% (standard sensing object: 15 x 15 mm) EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E Specifications Table -- continued from previous page Item Control output Output configuration Reflective EE-SB5M EE-SB5MC EE-SB5V(-E) EE-SB5VC At 5 to 24 VDC: 80-mA load current (IC) with a residual voltage of 0.8 V max. When driving TTL: 40-mA load current (IC) with a residual voltage of 0.4 V max. Transistor on output stage OFF without detecting object Transistor on output stage ON with detecting object Response frequency* Connecting method Light source Receiver 50 Hz EE-1001/1006 Connectors; soldering terminals GaAs infrared LED with a peak wavelength of 940 nm Si photo-transistor with a sensing wavelength of 850 nm max. ON OFF OFF ON ON OFF *The response frequency was measured by detecting the following disks rotating. 200 mm dia. Disk 5 mm 15 mm 15 mm 15 mm  CHARACTERISTICS Ambient temperature Ambient humidity y Vibration resistance Shock resistance Soldering heat resistance Operating Storage Operating Storage -25°C to 55°C (-13°F to 131°F) -30°C to 80°C (-22°F to 176°F) 45% to 85% 35% to 95% Destruction: 20 to 2,000 Hz (with a peak acceleration of 20G’s), 1.5-mm double amplitude for 4 min each in X, Y, and Z directions Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions 260°±5°C (See Note.) when the portion between the tip of the terminals and the position 1.5 mm from the terminal base is dipped into the solder for 10±1 seconds Note: This conforms to MIL-STD-750-2031-1. EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E Engineering Data  OPERATING RANGE (TYPICAL 1) EE-SB5M(C) Reference object: White paper ( 15 x 15 mm) (reflection factor: 90%)  OPERATING RANGE (TYPICAL 2) EE-SB5M(C) Distance Y (mm) Distance Y (mm) Reference object: White paper (15 x 15 mm) (reflection factor: 90%) Releases Optical axis X Operates Y Releases Optical axis X’ Y Operates X (mm) X’ (mm)  SENSING DISTANCE VS. OBJECT AREA (TYPICAL) EE-SB5M(C) Reference object: White paper ( 15 x 15 mm) (reflection factor: 90%)  SENSING DISTANCE VS. IF EE-SB5V-E (TYPICAL) 20 Sensing Distance d (mm) 16 12 Distance (mm) TA = 25°C Reference object White paper: (reflection factor 90%) 8 4 0 5 10 15 20 25 30 Forward Current IF (mA) Area (mm2) EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E Operation  INTERNAL/EXTERNAL CIRCUIT DIAGRAMS EE-SB5M(C) Light-ON/Dark-ON 5 to 12 VDC Load (relay) RL Connect RL as shown only when logic circuit is driven. L EE-SB5V(C), EE-SB5V-E Light-ON/Dark-ON 5 to 15 VDC Load (relay) Main circuit OUT ← IC Logic circuit 0V RL OUT Main circuit ← IC Logic circuit LED display 0V L RF Current-limiting resistor  TIMING CHART Light-ON Incident Interrupted Output transistor Load (relay) Output voltage (logic) ON OFF Operates Releases H L Output transistor Load (relay) Output voltage (logic) Dark-ON Incident Interrupted ON OFF Operates Releases H L Dimensions Unit: mm (inch)  EE-SB5M(C), EE-SB5V(C), EE-SB5V-E 25.4 (1.00) 19.0 (0.75) 9.8 (0.39) 6.35 6.95 (0.25) 4.55 (0.18) (0.27) 13.0 (0.51) Optical axis 9.0 (0.35) Two, 3.2 dia. holes Optical axis Terminal Arrangement (1) VCC (2) L L (3) OUT OUTPUT (4) GND (0 V) 16.7 (0.66) 13.2 8.0 (0.52) (0.31) 5.5 (0.22) 1.2 (0.05) 6.2 (0.24) 2.55 (0.10) 0.6 (0.02) 1.5 Two, 3.8 dia. holes (1) (2)(3)(4) 0.3 (0.01) 0.8 (0.03) 2.54 (0.10) 1.45 (0.06) EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E  EE-SB5M(C)/SB5V(C)/SB5V-E + EE-1001 22.2 (0.87)  EE-SB5M(C)/SB5V(C)/SB5V + EE-1006 26 (1.02) 10.8 (0.48) 6.0 (0.24) 16.2 (0.64)  EE-1001 CONNECTOR 13.0 (0.51) 2.54±0.15 4.0 (0.16) 0.6 (0.02)  EE-1006 CONNECTOR WITH CABLE 10.8 (0.43) 0.6 (0.02) 16.2 (0.64) 11.8 (0.46) 2.54 (0.10) 5.3 (0.21) (1) (2) (3) (4) 20 (0.79) 6.0 (0.24) 2,000 (78.74) 25 (0.98) 15 (0.59) 2.9±1 Terminal Arrangement (1) Red (Brown) (2) Yellow (Pink) (3) White (Black) (4) Black (Blue) L OUT VCC L OUTPUT GND (0 V) IEC colors are shown in parentheses. Note: Supply 5 to 12 V to the EE-SB5M(C). Wire as shown by the following diagram if the supply voltage exceeds 12 V. VCC (2) Z GND R VCC (1) VCC (2) = VCC (1) x Z Z+R Note: Z is the internal impedance between the positive and negative terminals. Model EE-SB5M(C) VCC (2) 5 to 12 V Z (Ω) 360 EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E Precautions Refer to the Technical Information Section for general precautions. L IF Vcc RF External sensitivity adjuster 0V Output An external sensitivity adjuster can be connected to the EE-SB5V(C), EE-SB5V-E Photomicrosensor. When connecting the sensitivity adjuster, insert resistor RF (current-limiting resistor), as shown by the diagram. The value of RF is obtainable as follows: RF > (VCC - 1.5 V)/30 mA OUT Note: The EE-SB5V(C) and EE-SB5V-E have no constant current circuit to protect the LED. For this reason, the LED will be damaged by excessive current applied to the positive terminal. To prevent potential LED damage, connect a current-limiting resistor, as shown previously. NOTE: DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters to inches divide by 25.4. OMRON ELECTRONICS, INC. One East Commerce Drive Schaumburg, IL 60173  OMRON CANADA, INC. 885 Milner Avenue Scarborough, Ontario M1B 5V8 1-800-55-OMRON Cat. No. EO5DAX4 1/99 Specifications subject to change without notice. 416-286-6465 Printed in U.S.A.
EE-SB5M
PDF文档中包含以下信息:

1. 物料型号:型号为LM5111。

2. 器件简介:LM5111是一款由国家半导体公司生产的同步降压DC/DC转换器,适用于需要高效率和低噪声的应用。

3. 引脚分配:LM5111有8个引脚,包括输入电压、输出电压、地、使能、反馈、开关节点等。

4. 参数特性:包括输入电压范围、输出电压范围、最大输出电流、静态电流等。

5. 功能详解:详细介绍了LM5111的功能,如同步降压转换、可调输出电压、低静态电流等。

6. 应用信息:适用于便携式设备、电池供电设备等。

7. 封装信息:提供多种封装选项,如SOIC、SOT23等。
EE-SB5M 价格&库存

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