EE-SX1235A

Back Opto–Switch Transmissive Phototransistor output. Snap-in mounting mechanism for easy mounting and dismounting. Compatible with 1.0-, 1.2- and 1.6-mm-thick PCBs. High resolution with a 0.5-mm-wide aperture. 5-mm-wide slot. Connects to Japan AMP’s CT-series connectors. EE–SX1235A–P2 Dimensions Four, R0.5 Post header 175489-3 (Japan AMP) (3) (2) (1) 3 (see note) 0.5 (slit width) Internal Circuit 3A 1C 3.2 (slit width) 2 K, E Optical axis (see note ) Terminal No. A C K, E Name Anode Collector Cathode, Emitter Unless otherwise specified, the tolerances are as shown below. Dimensions 3 mm max. 3 < mm  6 6 < mm  10 10 < mm  18 18 < mm  30 Tolerance ±0.3 ±0.375 ±0.45 ±0.55 ±0.65 Note: The asterisked dimension is specified by datum A only. Recommended Connectors: Japan AMP 173977-3 (insulation displacement-type connector) 175778-3 (crimp-type connector) 179228-3 (crimp-type connector) For recommended mounting holes see EE–SX4235–P2 on page 402 Specifications Absolute Maximum Ratings (Ta = 25°C) Item Emitter Forward current Pulse forward current Reverse voltage Detector Collector–Emitter voltage Emitter–Collector voltage Collector current Collector dissipation Ambient temperature Operating Storage Soldering Note: IF IFP VR VCEO VECO IC PC Topr Tstg Tsol Symbol --4V 30 V 5V 20 mA 100 mW (see note) –25°C to 95°C –40°C to 100°C --Rated value 50 mA (see note) Refer to the temperature rating chart if the ambient temperature exceeds 25°C. Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Forward voltage Reverse current Peak emission wavelength Detector Light current Dark current Leakage current Collector–Emitter saturated voltage Peak spectral sensitivity wavelength Rising time Falling time IR λP IL ID ILEAK VCE (sat) λP tr tf Symbol VF Value 1.2 V typ., 1.5 V max. 0.01 µA typ., 10 µA max. 940 nm typ. 0.6 mA min., 14 mA max. 200 nA max. --0.1 V typ., 0.4 V max. 850 nm typ. 8 µs typ. 8 µs typ. IF = 30 mA VR = 4 V IF = 30 mA IF = 20 mA, VCE = 5 V VCE = 10 V, 0 x --IF = 20 mA, IL = 0.3 mA VCE = 5 V VCC = 5 V, RL = 100 Ω, IL = 1 mA VCC = 5 V, RL = 100 Ω, IL = 1 mA Condition Engineering Data Forward Current vs. Collector Dissipation Temperature Rating IF Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation Pc (mW) Light Current vs. Forward Current Characteristics (Typical) Ta = 25°C VCE = 10 V Forward current I F (mA) Forward current I F (mA) Ta = –30°C Ta = 25°C Ta = 70°C PC Ambient temperature Ta (°C) Forward voltage VF (V) Light current I L (mA) Forward current IF (mA) Light Current vs. Collector–Emitter Voltage Characteristics (Typical) Ta = 25°C Relative Light Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA VCE = 5 V Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0x Relative light current I L (%) Light current I L (mA) IF = 50 mA IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Dark current I D (nA) Collector–Emitter voltage VCE (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resistance Characteristics (Typical) Vcc = 5 V Ta = 25°C Sensing Position Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25°C (Center of optical axis) Response Time Measurement Circuit Input Output 10% 90% Relative light current I L (%) Response time tr, tf ( µ s) Input VCC Output GND Load resistance RL (kΩ) Distance d (mm)