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ESAB33CS

ESAB33CS

  • 厂商:

    ETC

  • 封装:

  • 描述:

    ESAB33CS - FAST RECOVERY DIODE - List of Unclassifed Manufacturers

  • 数据手册
  • 价格&库存
ESAB33CS 数据手册
ESAB33(CS) (5A) FAST RECOVERY DIODE (200V / 5A) Outline drawings, mm 10+0.5 0 2.7±0.1 Ø3.6±0.2 4.5±0.2 1.32 6.4±0.2 0 14 -0.5 1 2 3 1.2 3.7±0.2 0.4 0.8 2.54 5.08 2.7 Features Soft recovery, low noise High reliability JEDEC EIAJ TO-220AB SC-46 Connection diagram Applications High speed power switching 1 2 3 Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-Repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM IO IFSM Tj Tstg Square wave duty=1/2, Tc=110°C Sine wave 10ms Conditions Rating -02 200 200 5* 30 -40 to +150 -40 to +150 15±0.2 Unit V V A A °C °C *Average forward current of centertap full wave connection Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Reverse recovery time Thermal resistance Symbol VFM IRRM trr Rth(j-c) Conditions IFM=2.5A VR=VRRM IF=0.1A, IR=0.1A IF=0.1A, IR=0.2A, Irec=0.05A junction to case Max. 1.4 100 100 45 5.0 Unit V µA ns °C/W (200V / 5A ) Characteristics Forward characteristics 100 10 5 10 ESAB33(CS)(5A) Reverse characteristics IF [A] 3 IR [µA] 1.0 1 0.5 0.1 0.05 0.1 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 100 200 300 VF [V] VR [V] Forward power dissipation 7 6 5 160 140 Output current-case temperature WF [W] 3 2 1 0 0 1 2 3 4 5 6 7 4 Tc 120 [°C] 100 80 60 40 0 1 2 3 4 5 6 7 Io [A] Io [A] Junction capacitance characteristics 100 30 50 30 10 Surge capability Cj [pF] 10 IFSM [A] 5 3 5 3 5 10 30 50 100 200 1 1 3 5 10 30 VR [V] [time] (at 50Hz) (200V / 5A ) Transient thermal impedance ESAB33(CS)(5A) 101 [°C/W] 1 00 10-1 10-3 10-2 10-1 10 0 101 102 t [sec.]
ESAB33CS 价格&库存

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