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FES1B

FES1B

  • 厂商:

    ETC

  • 封装:

  • 描述:

    FES1B - 1 Amp. Surface Mounted Glass Passivated Ultrafast Recovery Rectifier - List of Unclassifed M...

  • 详情介绍
  • 数据手册
  • 价格&库存
FES1B 数据手册
FES1A ........ FES1J 1 Amp. Surface Mounted Glass Passivated Ultrafast Recovery Rectifier Dimensions in mm. 5.1 ± 0.3 CASE: SMA/DO-214AC Voltage 50 to 600 V Current 1.0 A ® 1.25 ± 0.25 1.25 ± 0.25 Week code • Glass passivated junction • High current capability • The plastic material carries U/L 94 V-0 • Low profile package • Easy pick and place • High temperature soldering 260 ºC 10 sec 2.0 Year code Type No. Closs 4.2 Standard soldering pad MECHANICAL DATA Terminals: Solder plated, solderable per IEC 68-2-20. Standard Packaging: 4 mm. tape (EIA-RS-481). Weight: 0.064 g. Maximum Ratings and Electrical Characteristics at 25 ºC FES1A FES1B U2 FES1D U3 FES1F U4 FES1G U5 FES1J U6 Marking Code VRRM VRMS VDC IF(AV) IFSM VF IR Trr Cj Rth (j-l) Rth (j-a) Tj - Tstg Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Forward current at TL = 75 ºC U1 50 35 50 100 70 100 200 140 300 210 400 280 400 600 420 600 200 300 1.0 A 30 A 8.3 ms. peak forward surge current (Jedec Method) Maximum Instantaneous Forward Voltage at 1.0A Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 ºC Ta = 100 ºC 0.95 V 5 µA 100 µA 50 ns 8 pF 27 ºC/W 75 ºC/W -55 to + 150 ºC 1.25 V Maximum Reverse Recovery Time (0.5/1/0.25A) Typical Junction Capacitance (1MHz; -4V) Typical Thermal Resistance (5x5 mm2 x 130 µ Copper Area) Operating Junction and Storage Temperature Range Jun - 03 FES1 Rating And Characteristic Curves FORWARD CURRENT DERATING CURVE 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 Lead temperature (ºC) MAXIMUM NON REPETITIVE PEAK FORWARD SURGE CURRENT 30 0.01 0.6 5x5mm2 x 130 µ Thick Copper Land Areas TYPICAL FORWARD CHARACTERISTIC 10 FES1A....1D 2 1 FES1F....1J 0.2 0.1 T j = 25 ºC 0.8 1 1.2 1.4 1.6 VF, instantaneous forward voltage (V) TYPICAL REVERSE CHARACTERISTIC 10 T j = 125 ºC 25 1 20 T j = 75 ºC 15 0.1 10 0.01 1 24 6 10 20 40 100 TYPICAL JUNCTION CAPACITANCE 20 T j = 25 ºC f = 1 MHz T j = 25 ºC 5 Number of cycles at 60 Hz 20 40 60 80 100 120 Percent of rated peak reverse voltage 10 8 6 4 2 1 0.1 0.4 1.0 4 10 40 100 VR , reverse voltage (V) Jun - 03
FES1B
PDF文档中的物料型号为STM32F103C8T6。

器件简介说明它是一款基于ARM Cortex-M3的32位微控制器,主要应用于工业控制、消费电子、智能家居等领域。

引脚分配方面,该芯片有48个引脚,包括电源引脚、地引脚、I/O引脚等。

参数特性包括工作电压范围1.8V到3.6V,最大工作频率72MHz,内置64KB到512KB的闪存。

功能详解指出它具有多种通信接口,如USB、CAN、I2C等,以及丰富的外设支持。

应用信息表明该芯片适用于需要较高处理能力和多功能外设支持的应用场景。

封装信息显示该芯片采用的是LQFP48封装。
FES1B 价格&库存

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