FLL800IQ-2C

FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W (Typ.) High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in W-CDMA and IMT 2000 base station amplifiers as it offers high gain, long term reliability and ease of use. APPLICATIONS • Solid State Base-Station Power Amplifier. • W-CDMA and IMT 2000 Communication Systems. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 136 -65 to +175 +175 Unit V V W °C °C Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 176 and -51.8 mA respectively with gate resistance of 10Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Drain Current Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power Linear Gain Drain Current Power-Added Efficiency Thermal Resistance CASE STYLE: IU Symbol IDSS Vp VGSO Pout GL IDSR ηadd Rth Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 220mA IGS = -2.2mA VDS = 12V f = 2.17 GHz IDS = 2.0A Pin = 40.0dBm Channel to Case Min. -0.1 -5 48.0 10.0 Limits Typ. Max. 8 -0.3 49.0 11.0 11.5 50 0.8 -0.5 15 1.1 Unit A V V dBm dB A % °C/W Edition 1.1 October 2004 1 FLL800IQ-2C L-Band High Power GaAs FET ACPR vs. OUTPUT POWER -30 -25 -30 -35 -40 -45 -50 -60 -55 -60 -65 -65 IMD vs. OUTPUT POWER VDS = 12V IDS = 2.0A fo = 2.14GHz W-CDMA Single Signal +5MHz -5MHz +10MHz -10MHz IMD (dBc) -35 -40 -45 ACPR (dB) -50 -55 -70 VDS = 12V IDS = 2.0A f = 2.14GHz ∆f = 1MHz Wide Band Tuned IM3 IM5 33 34 35 36 37 38 39 40 41 42 43 44 45 36 37 38 39 40 41 42 43 44 -75 Output Power (dBm) Output Power (dBm) OUTPUT POWER vs. FREQUENCY 50 OUTPUT POWER vs. INPUT POWER VDS =12V 50 48 46 Output Power (dBm) VDS = 12V IDS = 2.0A Wide Band Tuned 42dBm 40dBm 38dBm 36dBm 48 IDS = 2.0A 46 44 42 40 38 36 34 24 26 28 30 32 34 36 38 40 42 ηadd 50 f = 2.17GHz Wide Band Tuned Pout Output Power (dBm) 44 34dBm 30 20 10 42 40 38 36 34 1.99 2.05 2.11 2.17 2.23 2.29 32dBm 30dBm 28dBm Input Power (dBm) 26dBm 24dBm Frequency (GHz) 2 ηadd (%) 40 FLL800IQ-2C L-Band High Power GaAs FET S-PARAMETERS VDS = 12V, IDS = 1000mA FREQUENCY (MHZ) 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3100 3200 3300 3400 3500 3600 3700 3800 3900 4000 4100 4300 4400 4500 S11 MAG ANG .933 .925 .907 .885 .852 .814 .764 .705 .650 .616 .601 .599 .617 .630 .669 .723 .793 .842 .852 .832 .769 .670 .509 .272 .346 .444 .651 .745 .794 .818 .843 .856 .860 .840 .746 168.4 166.9 164.8 163.1 161.0 159.2 157.6 157.4 159.0 162.5 165.8 169.9 172.1 174.1 175.7 175.5 170.9 162.6 151.8 138.5 120.4 94.8 53.4 -1.0 -37.6 -59.4 -86.0 -106.1 -119.8 -129.7 -137.8 -145.1 -158.2 -166.0 -179.8 S21 MAG .636 .662 .715 .772 .851 .957 1.085 1.211 1.324 1.422 1.492 1.579 1.635 1.744 1.873 2.012 2.002 1.892 1.685 1.503 1.373 1.312 1.197 .890 .777 .772 .644 .498 .391 .344 .302 .281 .261 .260 .318 S12 ANG MAG .010 .012 .014 .017 .019 .023 .025 .030 .032 .033 .033 .030 .029 .026 .022 .017 .012 .014 .018 .025 .033 .036 .044 .037 .026 .027 .026 .027 .025 .027 .023 .026 .046 .076 .157 S22 ANG MAG .879 .864 .855 .840 .823 .812 .809 .821 .840 .870 .891 .893 .869 .831 .752 .651 .554 .544 .604 .679 .739 .794 .837 .867 .871 .878 .889 .890 .893 .891 .891 .892 .890 .887 .874 ANG 173.1 172.5 172.1 172.0 172.1 172.8 173.7 174.9 175.3 174.4 172.2 168.7 165.4 160.6 157.3 157.7 164.9 176.7 -176.3 -174.2 -175.0 -176.6 -178.9 177.8 174.8 172.8 170.2 167.9 165.6 163.2 160.9 158.0 151.8 147.7 141.9 61.5 56.8 50.9 43.8 35.7 25.8 14.0 0.4 -13.9 -30.5 -46.2 -62.8 -79.4 -95.0 -113.0 -132.3 -156.1 -179.5 158.7 139.9 121.8 103.6 79.9 58.7 49.6 36.0 11.8 -3.6 -13.3 -19.5 -26.2 -31.0 -43.6 -47.9 -48.1 58.6 54.2 55.9 50.8 47.4 37.4 32.8 17.9 8.1 -9.4 -23.9 -38.8 -50.9 -77.7 -98.0 -127.2 -179.3 120.4 83.4 53.4 38.1 14.4 -13.0 -41.7 -37.4 -34.1 -42.2 -48.4 -41.2 -50.0 -41.8 -35.5 -24.0 -18.7 -33.6 Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier designs. 3 FLL800IQ-2C L-Band High Power GaAs FET Case Style "IQ" 24.0 20.4 –0.2 –0.2 2 1 4-0.1 45¡ 2.5 MIN. –0.15 –0.2 –0.2 17.4 8.0 4-2.0 4-R1.3 –0.2 4 6.0 5 2.4 –0.13 14.9 –0.2 15.5 3 4-2.6 –0.2 –0.2 5.5 MAX. 1, 2: 3: 4, 5: 6: Gate Source Drain Source 1.9 Unit: mm (inches) For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4