FLU35ZM

FLU35ZM FEATURES ・High Output Power: P1dB=35.5dBm(typ.) ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available L-Band Medium & High Power GaAs FET DESCRIPTION The FLU35ZM is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Item DC Input Voltage Channel Temperature Forward Gate Current Reverse Gate Current Gate Resistance Symbol VDS VGS PT Tstg Tch Rating 15 -5 20.8 -55 to +150 175 Unit V V W o o C C RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25oC) Symbol VDS Tch Igsf Igsr Rg Condition Unit V o ≤10 ≤ 145 ≤19.4 ≥-2.0 100 C mA mA Ω ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Thermal Resistance Symbol IDSS gm Vp VGSO P1dB G1dB Rth Test Conditions VDS=5V, VGS=0V VDS=5V, IDS=800mA VDS=5V, IDS=60mA IGS=-60uA VDS=10V f=2.0GHz IDS=0.6IDSS(Typ.) Min. -1.0 -5 34.5 10.5 Limit Typ. 1200 600 -2.0 35.5 11.5 5 Max. 1800 -3.5 6 o Unit mA mS V V dBm dB C /W Channel to Case G.C.P.:Gain Compression Point CASE STYLE: ZM Note1: Product supplied to this specification are 100% DC performance tested. Note2: The RF parameters are measured on a lot basis by sample testing 10 pcs/lot. Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested. ESD Class Ⅲ 2000 V～ Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kΩ) Edition 1.2 Jan 2004 1 FLU35ZM L-Band Medium & High Power GaAs FET OUTPUT POWER , POWER ADDED EFFICIENCY vs. INPUT POWER f=2.0GHz VDS=10V IDS=0.6IDSS 40 100 POWER DERATING CURVE 25 Total Pow e r Dis s ipatio [W] 20 38 Output Power [dB m] 36 34 32 30 28 26 24 40 80 Power Added Efficiency [% ] 15 10 5 0 0 50 100 150 200 Pout 60 ηadd 20 22 20 10 12 14 16 18 20 22 24 26 28 0 Case Temperature[℃] dBm） Input Power （ SMALL SIGNAL R.L. vs FREQUENCY Wid e Ban d Tu ning (1.8GHz ～ 2.2GHz ) 15 10 Sm all Sign al R.L. & 5 Is o lation [d B] 0 -5 -10 -15 -20 -25 -30 -35 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 14 10 8 6 4 2 0 -2 -4 -6 Sm all Sig nal Gain [dB] 12 Fr e q. [GHz ] S11 S12 S22 S21 2 FLU35ZM L-Band Medium & High Power GaAs FET ■ S-PARAMETER +90° +50 j +2 5j 10 Ω 25 Ω +100 j +1 0j 3. 0 50 Ω 100 Ω 3. 0 2. 0 1. H z 0G +250 j 1.0GH z 0 2. 0 1. H z 0G ∞ ± 180° 20 10 Scale for |S 21| 2.0 3.0 0° -1 0j -25 0j 0.4 -25 j -50j -10 0j S 11 S 22 0.6 -90° Scale for |S 12| S 12 S 21 VDS=10V, IDS=0.6IDSS(TYP.) Freq [GHz] 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 S11 MAG ANG 0.92 -157.14 0.92 -171.65 0.92 -178.09 0.92 175.59 0.92 168.62 0.89 159.87 0.90 150.98 0.91 143.89 0.93 137.22 0.93 133.89 S21 MAG ANG 4.75 94.86 2.45 81.26 1.69 70.63 1.32 61.24 1.08 50.14 0.90 39.03 0.76 27.30 0.64 16.94 0.54 6.74 0.45 -1.01 S12 MAG ANG 0.03 14.31 0.03 9.28 0.03 7.87 0.03 11.56 0.03 10.17 0.03 16.31 0.03 13.26 0.03 14.12 0.03 7.95 0.03 9.18 S22 MAG ANG 0.67 -172.46 0.67 -175.16 0.66 -176.48 0.67 -178.45 0.67 178.10 0.69 173.63 0.71 167.99 0.74 162.05 0.77 156.46 0.78 151.30 3 FLU35ZM L-Band Medium & High Power GaAs FET OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER @ VDS=10V, IDS(DC)=0.6IDSS Pin-Pout @f=1.8GHz 40 35 30 25 20 15 6 8 10 12 14 16 18 20 22 24 26 28 30 Input Pow e r [dBm ] Pout Ids [m A] P.A.E. Pout Pin-Pout @ f=2.0GHz 700 650 600 550 500 450 40 700 650 600 550 500 450 6 8 10 12 14 16 18 20 22 24 26 28 30 Input Pow e r [dBm ] Ids [m A] P.A.E. Outpu t Pow e r [dBm ] Dr ain Cur r e nt [m A] Outp u t Po w e r [d Bm ] 75 Power Added Efficiency[%] Dr ain Cu r r e n t [m A] 35 30 25 20 15 75 Power Added Efficiency[%] 50 50 25 25 0 0 Pin-Pout @f=2.2GHz 40 700 OUTPUT POWER vs. FREQUENCY 40 Outpu t Pow e r [d Bm ] 75 Power Added Efficiency[%] Output Pow e r [dBm ] Drain Curre nt [m A] 35 30 650 600 35 30 25 20 15 1.7 1.9 2.1 2.3 50 25 20 550 500 25 15 6 8 10 12 14 16 18 20 22 24 26 28 30 Input Power [dBm] Pout Ids[mA] P.A.E. 450 0 Fr e que ncy [GHz] Pin=10dBm Pin=25dBm Pin=15dBm Pin=28dBm Pin=20dBm P1dB 4 FLU35ZM L-Band Medium & High Power GaAs FET @ VDS=10V, IDS(DC)=0.6IDSS IMD vs OUTPUT POWER(2-tone) 0 -10 -20 W-CDMA 2-CARRIER IMD(ACLR) *fo=2.1325GHz *f1=2.1475GHz -25 -30 ACL R(IM D) [dBc] -35 -40 -45 -50 -55 IM D [dBc] -30 -40 -50 -60 -70 -80 15 20 25 30 35 -60 17 19 21 23 25 27 29 31 2-tone to tal Pout [dBm ] @ df=+5M Hz IM 3@ 1.8GHz IM 5@ 2.0GHz IM 5@ 1.8GHz IM 3@ 2.2GHz IM 3@ 2.0GHz IM 5@ 2.2GHz 2-ton e total Pou t [dBm ] IM 3-L IM 3-U IM 5-L IM 5-U W-CDMA SINGLE CARRIER ACLR *fo=2.1325GHz -25 -30 -35 W-CDMA SINGLE CARRIER CCDF AND GAIN *fo=2.1325GHz 15 14 13 CCDF,Gain [dB] 12 11 10 9 8 7 6 5 18 23 28 ACL R [dBc] -40 -45 -50 -55 -60 -65 -70 23 24 25 26 27 28 29 30 31 32 Output Pow e r [dBm ] - 5M Hz +5M Hz - 10M Hz +10M Hz Output Pow e r [dBm ] 0.01% Pe ak Gain Note : *All signal are W-CDMA modulation at 3GPP3.4.12-00 BS-1 64ch non clipping. 5 FLU35ZM L-Band Medium & High Power GaAs FET ■ Recommended Bias Circuit and Internal Block Diagram εr=3.5 , t=0.8 * Board was tuned for wide band performance that is presented in page 4 and 5. 6 FLU35ZM L-Band Medium & High Power GaAs FET ■ Package Outline 7 FLU35ZM L-Band Medium & High Power GaAs FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101, Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. TEL +81-45-853-8156 FAX +81-45-853-8170 8