FS04D

FS04...D SURFACE MOUNT SCR DPAK (Plastic) On-State Current 4 Amp Gate Trigger Current < 200 µA Off-State Voltage A 200 V ÷ 600 V K A G These series of S ilicon C ontrolled Rectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER On-state Current Average On-State Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature CONDITIONS 180º Conduction Angle, TC = 115 ºC Half Cycle, Θ=180º, TC = 115 ºC Half Cycle, 60 Hz Half Cycle, 50 Hz t = 10 ms, Half Cycle IGR = 10µA 20 µs max. 20 µs max. 20 ms max. Min. 4 2.5 33 30 4.5 8 1.2 3 0.2 +125 +150 260 Max. Unit A A A A A 2s V A W W ºC ºC ºC IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld -40 -40 10s max SYMBOL PARAMETER Repetitive Peak Off State Voltage CONDITIONS RGK = 1 KΩ B 200 VOLTAGE D 400 M 600 Unit V VDRM VRRM Jun - 02 FS04...D SURFACE MOUNT SCR Electrical Characteristics SYMBOL PARAMETER Gate Trigger Current Off-State Leakage Current On-state Voltage Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise CONDITIONS MIN MAX VD = VDRM , RGK = 220Ω, Tj = 125 ºC MAX VR = VRRM , Tj = 25 ºC MAX MAX at IT = 8 Amp, tp = 380 µs, Tj = 25 ºC VD = 12 VDC , RL = 33Ω, Tj = 25 ºC MAX VD =VDRM, RL = 3.3 KΩ, RGK = 220Ω MIN Tj = 125 ºC MAX IT = 50 mA , RGK = 1KΩ, Tj = 25 ºC IG = 1 mA , RGK = 1KΩ, Tj = 25 ºC MAX VD = 0.67 x VDRM , RGK = 220Ω, MIN Tj = 125 ºC MIN VD = 12 VDC , RL = 33Ω. Tj = 25 ºC 01 1 20 SENSITIVITY 04 15 50 02 200 1 5 1.6 0.8 0.1 5 6 10 10 50 5 10 03 20 200 Unit µA mA µA V V V mA mA V/µs A/µs ºC/W ºC/W IGT IDRM / IRRM VTM VGT VGD IH IL dv / dt di / dt Rth(j-c) Rth(j-a) Critical Rate of Current Rise IG = 2 x IGT Tr ≤ 100 ns, F = 60 Hz, Tj = 125 ºC Thermal Resistance Junction-Case for DC Thermal Resistance Junction-Amb (S=0.5 cm2) 3 70 PART NUMBER INFORMATION F FAGOR SCR CURRENT S 04 01 B D 00 TR PACKAGING FORMING CASE VOLTAGE SENSITIVITY Jun - 02 FS04...D SURFACE MOUNT SCR Fig. 1: Maximum average power dissipation versus average on-state current P (W) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 IT(AV)(A) α = 80 º α 360 º Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink+contact. P (W) 4.0 3.5 Rth= 37C/W Rth= 15C/W Rth= 5C/W Rth= 10C/W T case (ºC) Rth= 0C/W 115 3.0 2.5 2.0 120 1.5 1.0 0.5 0 0 25 50 75 100 125 Tamb (ºC) 125 α=180º Fig. 3: Average and DC on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout) I T(AV) (A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 Tamb (ºC) α = 180 º DC Fig. 4-1: Relative variation of thermal impedance junction to case versus pulse duration. K=[Zth(j-c) / Rth(j-c)] 1.0 0.5 0.2 0.1 1E-3 1E-2 1E-1 1E+0 tp (s) Fig. 4-2: Relative variation of thermal impedance junction to ambient versus pulse duration. (recommended pad layout) K=[Zth(j-a) / Rth(j-a)] 1.00 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Igt (Tj) Igt (Tj = 25 ºC) 2.0 1.8 1.6 1.4 1.2 Igt Ih (Tj) Ih (Tj = 25 ºC) 0.10 1.0 0.8 0.6 0.4 0.2 Ih 0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 tp (s) 0 -40 -20 0 20 40 60 80 100 120 140 Tj (ºC) Jun- 02 FS04...D SURFACE MOUNT SCR Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) 35 Tj initial = 25 ºC F= 50Hz Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp