FS0802BD00TR

FS0802.D SURFACE MOUNT SCR DPAK (Plastic) On-State Current 8 Amp Off-State Voltage Gate Trigger Current < 200 µA A 200 V ÷ 600 V K A G These series of Silicon Controlled R ectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER On-state Current Average On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature CONDITIONS 180º Conduction Angle, Tc = 110 ºC Half Cycle, Θ = 180 º, TC = 110 ºC Half Cycle, 60 Hz Half Cycle, 50 Hz tp = 10ms, Half Cycle IGR = 10 µA 20 µs max. 20 µs max. 20ms max. -40 -40 10s max. Min. Max. 8 5 73 70 24 8 4 5 1 +125 +150 260 Unit A A A A A 2s V A W W ºC ºC ºC IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld SYMBOL PARAMETER Repetitive Peak Off State Voltage CONDITIONS RGK = 1 KΩ B 200 VOLTAGE D 400 M 600 Unit V VDRM VRRM Feb - 03 FS0802.D SURFACE MOUNT SCR Electrical Characteristics SYMBOL PARAMETER Gate Trigger Current Off-State Leakage Current On-state Voltage Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise CONDITIONS VD = 12 VDC , RL = 140Ω. Tj = 25 ºC MIN MAX MAX MAX MAX MAX MIN SENSITIVITY 02 Unit µA 200 1 5 1.6 0.8 0.1 5 6 5 50 20 70 Tj = 125 ºC Tj = 125 ºC MAX MAX 0.85 46 mA µA V V V mA mA V/µs IGT IDRM / IRRM VTM VGT VGD IH IL dv / dt di / dt Rth(j-c) Rth(j-a) Vt0 Rd V D = VDRM , RGK = 220Ω Tj = 125 ºC VR = VRRM , Tj = 25 ºC at IT = 16 Amp, tp = 380 µs, Tj = 25 ºC VD = 12 VDC , RL = 140Ω, Tj = 25 ºC VD = VDRM , RL = 3.3KΩ, RGK = 220Ω Tj = 125 ºC IT = 50 mA, RGK = 1KΩ Tj = 25 ºC MAX IG = 1 mA, RGK = 1 KΩ MAX MIN VD = 0.67 x VDRM , RGK = 220Ω, Tj = 125 ºC Tr ≤ 100 ns, F = 60 Hz, Tj = 125 ºC MIN Critical Rate of Current Rise IG = 2 x IGT Thermal Resistance Junction-Case for DC Thermal Resistance Junction-Amb for DC Threshold Voltage Dynamic resistance A/µs ºC/W ºC/W V mΩ F FAGOR SCR CURRENT S 08 02 B D 00 TR PACKAGING FORMING CASE VOLTAGE SENSITIVITY Feb - 03 FS08...D SURFACE MOUNT SCR Fig. 1: Maximum average power dissipation versus average on-state current. P (W) 10 10 D.C. Fig. 2: Average and D.C. on-state current versus case temperature. I T(av) (A) 8 8 6 6 α = 180 º 4 4 2 360 º α 2 IT(av)(A) 0 0 1 2 3 4 5 6 7 0 0 25 50 75 100 125 T case (ºC) Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. K = [Zth(j-c) / Rth (j-c)] 1.0 Fig. 4: Relative variation of gate trigger current, holding and latching current versus junction temperature. IGT, IH (Tj) / IGT, IH (Tj = 25 ºC) 2.0 1.8 1.6 IGT 0.5 1.4 1.2 1.0 0.8 IH & IL 0.2 0.6 0.4 0.2 tp (s) 1E-2 1E-1 1E+0 Tj (ºC) -40 -20 0 20 40 60 80 100 120 140 0.1 1E-3 0.0 Fig. 5: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) 80 70 60 Tj initial = 25 ºC F = 50 Hz Fig. 6: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp < 10 ms, and corresponding value of I2t. ITSM(A). I2t (A2s) 300 Tj initial = 25 ºC ITSM 100 50 40 30 20 10 0 1 10 100 Number of cycles 1000 10 1 2 5 10 tp(ms) 20 50 I2 t Feb - 03 FS08...D SURFACE MOUNT SCR FOOT PRINT Fig. 8: On-state characteristics (maximum values). ITM(A) 100.0 Tj = Tj max. 6.7 10.0 6.7 Tj = 25 ºC 1.0 Tj max Vto = 0.85 V Rt = 46 mΩ 3 3 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VTM(V) 1.6 2.3 2.3 1.6 PACKAGE MECHANICAL DATA DPAK TO 252-AA REF. 8º±2º A ø1x0.15 E L3 8º±2º D H 1.6 L4 8º±2º L e 4.57 Typ. b L2 A1 1.067±0.013 8º±2º 8º±2º D1 c2 E1 A A1 b c c1 c2 D D1 E E1 e H L L1 L2 L3 L4 Min. 2.18 0 0.64 0.46 0.46 5.97 5.21 6.35 5.20 9.40 1.40 2.55 0.46 0.89 0.64 DIMENSIONS Milimeters Nominal 2.3±0.18 0.12 0.75±0.1 0.8±0.013 6.1±0.1 6.58±0.14 5.36±0.1 2.28BSC 9.90±0.15 2.6±0.05 0.5±0.013 1.20±0.05 0.83±0.1 Max. 2.39 0.127 0.89 0.61 0.56 6.22 5.52 6.73 5.46 10.41 1.78 2.74 0.58 1.27 1.02 Marking: type number Weight: 0.2 g Feb - 03