FT1011

FT10...H HIGH COMMUTATION TRIAC TO220-AB On-State Current 10 Amp Gate Trigger Current ≤ 25 mA to ≤ 50 mA Off-State Voltage 200 V ÷ 600 V MT2 MT1 MT2 G This series of T RIAC s uses a high performance PNPN technology. These parts are intended for general purpose AC switching applications with highly inductive loads. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER RMS On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Gate Current Average Gate Power Dissipation Critical rate of rise of on-state current Operating Temperature Storage Temperature CONDITIONS All Conduction Angle, TC = 105 ºC Full Cycle, 60 Hz Full Cycle, 50 Hz tp = 10 ms, Half Cycle 20 µs max. Tj =125ºC Tj =125ºC IG = 2x IGT, tr ≤100ns f= 120 Hz, Tj =125ºC Min. 10 105 100 55 4 1 50 -40 -40 +125 +150 Max. Unit A A A A2s A W A/µs ºC ºC IT(RMS) ITSM ITSM I2t IGM PG(AV) di/dt Tj Tstg SYMBOL PARAMETER Repetitive Peak Off State Voltage B 200 VOLTAGE D 400 M 600 Unit V VDRM VRRM Jun - 02 FT10...H HIGH COMMUTATION TRIAC Electrical Characteristics SYMBOL PARAMETER CONDITIONS VD = 12 VDC , RL = 33Ω, Tj = 25 ºC VD = VDRM , Tj = 125 ºC VR = VRRM , Tj = 25 ºC Tj = 125 ºC Tj = 125 ºC Quadrant SENSITIVITY 11 25 14 35 1 5 0.85 40 1.55 1.3 0.2 16 50 Unit mA mA µA V mΩ V V V mA mA IGT (1) Gate Trigger Current IDRM /IRRM Off-State Leakage Current Vto (2) Rd(2) VTM (2) VGT VGD IH (2) IL Threshold Voltage Dynamic Resistance On-state Voltage Gate Trigger Voltage Gate Non Trigger Current Holding Current Latching Current dv / dt (2) Critical Rate of Voltage Rise Q1÷Q3 MAX MAX MAX MAX MAX IT = 14 Amp, tp = 380 µs, Tj = 25 ºC MAX VD = 12 VDC , RL = 33Ω, Tj = 25 ºC Q1÷Q3 MAX VD = VDRM , RL = 3.3KΩ, Tj = 125 ºC Q1÷Q3 MIN IT = 500 mA , Gate open, Tj = 25 ºC MAX 25 IG = 1.2 IGT, Tj = 25 ºC Q1,Q3 MAX 40 Q2 MAX 50 MIN 200 VD = 0.67 x VDRM , Gate open Tj = 125 ºC MIN MIN MIN 5 35 50 50 70 60 80 500 1000 V/µs 5.5 1.5 60 9 A/ms (dI/dt)c (2) Critical Rate of Current Rise (dv/dt)c= 0.1 V/µs Rth(j-c) Rth(j-a) Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Tj = 125 ºC (dv/dt)c= 10 V/µs Tj = 125 ºC without snubber Tj = 125 ºC for AC 360º conduction angle ºC/W ºC/W (1) Minimum IGT is guaranted at 5% of IGT max. (2) For either polarity of electrode MT2 voltage with reference to electrode MT1. PART NUMBER INFORMATION F FAGOR TRIAC CURRENT T 10 11 B H 00 TU PACKAGING FORMING CASE VOLTAGE SENSITIVITY Jun - 02 FT10...H HIGH COMMUTATION TRIAC Fig. 1: Maximum power dissipation versus RMS on-state curren (full cycle). P (W) 16 14 12 10 8 6 4 2 0 IT(RMS)(A) 0 1 2 3 4 5 6 7 8 9 10 11 12 Fig. 2: RMS on-state current versus case temperature (full cycle). IT(RMS)(A) 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 Tc (ºC) 25 50 75 100 125 Fig. 3: : Relative variation of thermal impedance versus pulse duration. K=[Zth / Rth] 1E+0 Zth(j-c) Fig. 4: On-state characteristics (maximum values) ITM (A) 100 Tj max 1E-1 Zth(j-a) 10 Tj = 25 ºC Tj max Vto = 0.85 V Rt = 35mΩ 1E-2 1E-3 tp (s) 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp