FT1608BH00TU

FT16...H LOGIC LEVEL TRIAC TO220-AB On-State Current 16 Amp Gate Trigger Current < 10 mA Off-State Voltage 200 V ÷ 600 V MT2 MT1 MT2 G This series of TRIACs uses a high performance PNPN technology. These parts are intended for general purpose AC switching applications with highly inductive loads. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER RMS On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Gate Current Average Gate Power Dissipation Critical rate of rise of on-state current Operating Temperature Storage Temperature CONDITIONS All Conduction Angle, TC = 100 ºC Full Cycle, 60 Hz Full Cycle, 50 Hz tp = 10 ms, Half Cycle 20 µs max. Tj =125ºC Tj =125ºC IG = 2x IGT, tr ≤100ns f= 120 Hz, Tj =125ºC Min. 16 168 160 144 4 1 50 -40 -40 +125 +150 Max. Unit A A A A2s A W A/µs ºC ºC IT(RMS) ITSM ITSM I2t IGM PG(AV) di/dt Tj Tstg SYMBOL PARAMETER Repetitive Peak Off State Voltage B 200 VOLTAGE D 400 M 600 Unit V VDRM VRRM Jul - 02 FT16...H LOGIC LEVEL TRIAC Electrical Characteristics SYMBOL PARAMETER CONDITIONS VD = 12 VDC , RL = 30Ω, Tj = 25 ºC VD = VDRM , RGK = 1KΩ, Tj = 125 ºC VR = VRRM , Tj = 25 ºC Tj = 125 ºC Tj = 125 ºC Quadrant SENSITIVITY 08 10 2 5 0.85 25 1.55 1.3 0.2 15 25 30 40 8.5 3.0 1.2 60 Unit mA mA µA V mΩ V V V mA mA V/µs A/ms IGT (1) Gate Trigger Current IDRM /IRRM Off-State Leakage Current Vto (2) Rd(2) VTM (2) VGT VGD IH (2) IL Threshold Voltage Dynamic Resistance On-state Voltage Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current dv / dt (2) Critical Rate of Voltage Rise Q1÷Q3 MAX MAX MAX MAX MAX IT = 22.5 Amp, tp = 380 µs, Tj = 25 ºC MAX VD = 12 VDC , RL = 30Ω, Tj = 25 ºC Q1÷Q3 MAX VD = VDRM , RL = 3.3KΩ, Tj = 125 ºC Q1÷Q3 MIN IT = 100 mA , Gate open, Tj = 25 ºC MAX IG = 1.2 IGT, Tj = 25 ºC Q1,Q3 MAX Q2 MAX MIN VD = 0.67 x VDRM , Gate open Tj = 125 ºC MIN MIN MIN (dI/dt)c (2) Critical Rate of Current Rise (dv/dt)c= 0.1 V/µs Rth(j-c) Rth(j-a) Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Tj = 125 ºC (dv/dt)c= 10 V/µs Tj = 125 ºC without snubber Tj = 125 ºC for AC 360º conduction angle ºC/W ºC/W (1) Minimum IGT is guaranted at 5% of IGT max. (2) For either polarity of electrode MT2 voltage with reference to electrode MT1. PART NUMBER INFORMATION F FAGOR TRIAC CURRENT T 16 08 B H 00 TU PACKAGING FORMING CASE VOLTAGE SENSITIVITY Jul - 02 FT16...H LOGIC LEVEL TRIAC Fig. 1: Maximum power dissipation versus RMS on-state curren (full cycle). P (W) 20 18 16 14 12 10 10 8 6 4 2 0 IT(RMS)(A) 0 2 4 6 8 10 12 14 16 8 6 4 2 0 Tc (ºC) 0 25 50 75 100 125 18 16 14 12 Fig. 2: RMS on-state current versus case temperature (full cycle). IT(RMS)(A) Fig. 3: : Relative variation of thermal impedance versus pulse duration. K=[Zth / Rth] 1E+0 Zth(j-c) Fig. 4: On-state characteristics (maximum values) ITM (A) 200 Tj max 100 1E-1 Zth(j-a) 10 Tj = 25 ºC Tj max Vto = 0.55 V Rt = 25mΩ 1E-2 1E-3 tp (s) 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VTM (V) Fig. 5: Surge peak on-state current versus number of cycles I TSM (A) 180 160 140 120 100 80 60 40 20 0 1 10 100 1000 Number of cycles Repetitive Tc = 85 ºC Non repetitive Tj initial = 25 ºC t=20ms One cycle Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp