GFP70N03

GFP70N03 N-Channel Enhancement-Mode MOSFET TO-220AB 0.415 (10.54) Max. 0.154 (3.91) Dia. 0.142 (3.60) 0.113 (2.87) 0.102 (2.56) D NCHT RE FE T EN G VDS 30V RDS(ON) 8mΩ ID 70A D ® 0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) G S * 0.155 (3.93) 0.134 (3.40) 0.603 (15.32) 0.573 (14.55) 0.635 (16.13) 0.580 (14.73) 0.360 (9.14) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.104 (2.64) 0.094 (2.39) Features • Advanced Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency 0.410 (10.41) 0.350 (8.89) G PIN D S 0.160 (4.06) 0.09 (2.28) 0.560 (14.22) 0.530 (13.46) Mechanical Data Case: JEDEC TO-220AB molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds, 0.17” (4.3mm) from case Mounting Torque: 10 in-lbs maximum Weight: 2.0g 0.037 (0.94) 0.026 (0.66) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.190 (4.83) 0.022 (0.56) 0.014 (0.36) Dimensions in inches and (millimeters) * May be notched or flat Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 100°C Symbol VDS VGS ID IDM PD TJ, Tstg TL RθJC RθJA C = 25°C unless otherwise noted) Limit 30 ± 20 70 200 62.5 25 –55 to 150 275 2.0 62.5 Unit V A W °C °C °C/W °C/W Operating Junction and Storage Temperature Range Lead Temperature (1/8” from case for 5 sec.) Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance Notes: (1) Maximum DC current limited by the package 5/16/01 GFP70N03 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current (2) J = 25°C unless otherwise noted) Symbol Test Condition VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 30V, VGS = 0V VDS ≥ 5V, VGS = 10V VGS = 10V, ID = 35A VGS = 4.5V, ID = 30A VDS = 15V, ID = 35A Min Typ Max Unit BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs 30 1.0 — — 70 — — — — — — — — 6 9 61 — 3.0 ±100 1 — 8 11 — V V nA µA A mΩ S Drain-Source On-State Resistance(2) Forward Transconductance(2) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max Diode Forward Current Diode Forward Voltage (2) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS =15V, VGS=5V, ID=35A VDS = 15V, VGS = 10V ID = 35A — — — — 34 63 11 11 9 9 100 31 3400 618 300 48 95 — — 14 14 167 62 — — — pF ns nC VDD = 15V, RL = 15Ω ID ≅ 1A, VGEN = 10V RG = 6Ω VGS = 0V VDS = 15V f = 1.0MHZ — — — — — — — IS VSD — IS = 35A, VGS = 0V — — — 0.9 35 1.3 A V Notes: (1) Maximum DC current limited by the package (2) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% VDD ton toff tr 90% Switching Test Circuit VGEN RG VIN D RD VOUT Switching Waveforms td(on) td(off) tf 90 % 10% INVERTED 90% Output, VOUT DUT 10% G 50% 50% S Input, VIN 10% PULSE WIDTH GFP70N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T 70 60 50 40 30 20 10 VGS = 2.5V 0 0 0.5 1 1.5 2 2.5 0 1 2 3 4 5 3.0V 10V 6.0V 4.5V 60 4.0V 3.5V A = 25°C unless otherwise noted) Fig. 1 – Output Characteristics 70 Fig. 2 – Transfer Characteristics VDS = 10V ID -- Drain Source Current (A) ID -- Drain Current (A) 50 40 TJ = 125°C 30 20 25°C 10 --55°C VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature 1.8 ID = 250µA 0.014 0.012 Fig. 4 – On-Resistance vs. Drain Current VGS(th) -- Threshold Voltage (V) RDS(ON) -- On-Resistance (Ω) 1.6 1.4 1.2 0.01 VGS = 4.5V 0.008 0.006 VGS = 10V 0.004 0.002 0 1 0.8 0.6 --50 --25 0 25 50 75 100 125 150 0 20 40 60 80 100 TJ -- Junction Temperature (°C) ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature 1.6 VGS = 10V ID = 35A RDS(ON) -- On-Resistance (Normalized) 1.4 1.2 1 0.8 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (°C) GFP70N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage 0.03 ID = 35A 10 Fig. 7 – Gate Charge VGS -- Gate-to-Source Voltage (V) VDS = 15V ID = 35A 8 RDS(ON) -- On-Resistance (Ω) 0.025 0.02 6 0.015 TJ = 125°C 4 0.01 0.005 25°C 2 0 2 4 6 8 10 0 0 10 20 30 40 50 60 70 VGS -- Gate-to-Source Voltage (V) Qg -- Gate Charge (nC) Fig. 8 – Capacitance 4500 4000 3500 Ciss f = 1MHZ VGS = 0V 100 Fig. 9 – Source-Drain Diode Forward Voltage VGS = 0V 10 3000 2500 2000 1500 1000 500 0 0 5 Crss Coss IS -- Source Current (A) C -- Capacitance (pF) 1 TJ = 125°C 0.1 25°C --55°C 0.01 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VDS -- Drain-to-Source Voltage (V) VSD -- Source-to-Drain Voltage (V) GFP70N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 10 – Breakdown Voltage vs. Junction Temperature 40 1 Fig. 11 – Thermal Impedance D = 0.5 39 RΘJA (norm) -- Normalized Thermal Impedance BVDSS -- Breakdown Voltage (V) ID = 250µA 0.2 PDM 0.1 0.1 0.05 Single Pulse t1 t2 1. Duty Cycle, D = t1/t2 2. RθJC (t) = RθJC(norm) *RθJC 3. RθJC = 2.0°C/W 4. TJ - TC = PDM * RθJC (t) 0.01 0.0001 0.001 0.01 0.1 1 10 38 37 36 35 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (°C) Pulse Duration (sec.) Fig. 12 – Power vs. Pulse Duration 1000 Single Pulse RθJC = 2.0°C/W TC = 25°C 1000 Fig. 13 – Maximum Safe Operating Area 800 ID -- Drain Current (A) 10 100 S RD (O N) Power (W) 600 Lim it 1m 10 m s 0µ s s 400 10 VGS = 10V Single Pulse RΘJC = 2.0 °C/W TC = 25°C 0.1 1 100ms DC 200 0 0.0001 0.001 0.01 0.1 1 10 1 10 100 Pulse Duration (sec.) VDS -- Drain-Source Voltage (V)