HAL573

ADVANCE INFORMATION MICRONAS HAL571, 573...575, HAL581, 584 Two-Wire Hall Effect Sensor Family Edition Oct. 11, 2000 6251-538-1AI MICRONAS HAL57x, HAL58x Contents Page 3 3 3 4 4 4 4 5 6 6 6 6 7 7 8 9 12 12 13 14 15 16 17 18 18 18 18 19 19 20 Section 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 2. 3. 3.1. 3.2. 3.3. 3.4. 3.5. 3.6. 3.7. 4. 4.1. 4.2. 4.3. 4.4. 4.5. 4.6. 5. 5.1. 5.2. 5.3. 5.4. 5.5. 6. Title Introduction Features Family Overview Marking Code Operating Junction Temperature Range Hall Sensor Package Codes Solderability Functional Description Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Recommended Operating Conditions Electrical Characteristics Magnetic Characteristics Overview Type Descriptions HAL571 HAL573 HAL574 HAL575 HAL581 HAL584 Application Notes Application Circuit Extended Operating Conditions Start-up Behavior Ambient Temperature EMC and ESD Data Sheet History ADVANCE INFORMATION 2 Micronas ADVANCE INFORMATION HAL57x, HAL58x 1.2. Family Overview Type 571 573 574 575 581 584 Switching Behavior unipolar unipolar unipolar latching unipolar inverted unipolar inverted Sensitivity medium low medium medium medium medium see Page 12 13 14 15 16 17 Two-Wire Hall Effect Sensor Family in CMOS technology 1. Introduction This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the magnetic switching behavior and switching points. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and a current source. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the current source is switched on (high current consumption) or off (low current consumption). The active offset compensation leads to constant magnetic characteristics in the full supply voltage and temperature range. In addition, the magnetic parameters are robust against mechanical stress effects. The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.75 V to 24 V in the junction temperature range from –40 °C up to 140 °C. All sensors are available in the SMD-package SOT-89B and in the leaded version TO-92UA. 1.1. Features: – current output for two-wire applications – low current consumption: 5 mA ... 6.9 mA – high current consumption: 12 mA ... 17 mA – junction temperature range from –40 °C up to 140 °C. – operates from 3.75 V to 24 V supply voltage – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz – switching offset compensation at typically 145 kHz – overvoltage and reverse-voltage protection – magnetic characteristics are robust against mechanical stress effects – constant magnetic switching points over a wide supply voltage range – the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics – ideal sensor for applications in extreme automotive and industrial environments – EMC corresponding to DIN 40839 Unipolar Switching Sensors: The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Current consumption IDDhigh BHYS IDDlow 0 BOFF BON B Fig. 1–1: Unipolar Switching Sensor Unipolar Inverted Switching Sensors: The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Current consumption IDDhigh BHYS IDDlow 0 BON BOFF B Fig. 1–2: Unipolar Inverted Switching Sensor Micronas 3 HAL57x, HAL58x Latching Sensors: The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption with the magnetic north pole on the branded side. The current consumption does not change if the magnetic field is removed. For changing the current consumption, the opposite magnetic field polarity must be applied. Current consumption IDDhigh ADVANCE INFORMATION 1.4. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). K: TJ = –40 °C to +140 °C E: TJ = –40 °C to +100 °C Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. Please refer section 5.4. on page 19 for details. 1.5. Hall Sensor Package Codes BHYS IDDlow BOFF Fig. 1–3: Latching Sensor 0 BON B HALXXXPA-T Temperature Range: K or E Package: SF for SOT-89B UA for TO-92UA Type: 57x or 58x Example: HAL581UA-E 1.3. Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type Temperature Range K HAL571 HAL573 HAL574 HAL575 HAL581 HAL584 571K 573K 574K 575K 581K 584K 571E 573E 574E 575E 581E 584E Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 °C and 90% relative humidity. VDD 1 → Type: 581 → Package: TO-92UA → Temperature Range: TJ = –40 °C to +100 °C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Ordering Codes for Hall Sensors”. 1.6. Solderability all packages: according to IEC68-2-58 During soldering reflow processing and manual reworking, a component body temperature of 260 °C should not be exceeded. E 2 GND 3 Fig. 1–4: Pin configuration 4 Micronas ADVANCE INFORMATION HAL57x, HAL58x HAL57x, HAL58x VDD 1 Reverse Voltage & Overvoltage Protection Temperature Dependent Bias 2. Functional Description The HAL 57x, HAL 58x two-wire sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the current source switches to the corresponding state. In the low current consumption state, the current source is switched off and the current consumption is caused only by the current through the Hall sensor. In the high current consumption state, the current source is switched on and the current consumption is caused by the current through the Hall sensor and the current source. The built-in hysteresis eliminates oscillation and provides switching behavior of the output signal without bouncing. Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. An internal oscillator provides a twophase clock. In each phase, the current is forced through the Hall plate in a different direction, and the Hall voltage is measured. At the end of the two phases, the Hall voltages are averaged and thereby the offset voltages are eliminated. The average value is compared with the fixed switching points. Subsequently, the current consumption switches to the corresponding state. The amount of time elapsed from crossing the magnetic switching level to switching of the current level can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to –15 V. No external protection diode is needed for reverse voltages ranging from 0 V to –15 V. Hysteresis Control Hall Plate Switch Comparator Current Source Clock GND 2, 3 Fig. 2–1: HAL57x, HAL 58x block diagram fosc t B BOFF BON t IDD IDDhigh IDDlow t IDD 1/fosc = 6.9 µs t Fig. 2–2: Timing diagram (example: HAL 581) Micronas 5 HAL57x, HAL58x 3. Specifications 3.1. Outline Dimensions 4.55 0.15 0.3 1.7 2 y sensitive area ∅ 0.2 1.5 0.3 4.06 ±0.1 ADVANCE INFORMATION sensitive area ∅ 0.4 y 3.05 ±0.1 4 ±0.2 min. 0.25 1 0.4 0.4 1.5 3.0 2 3 2.55 top view 0.48 0.55 1.15 0.4 0.36 1 2 3 0.75 ±0.2 0.42 1.27 1.27 branded side 2.54 branded side 45° SPGS7002-9-A/2E 3.1 ±0.2 14.0 min. 0.8 0.06 ±0.04 SPGS0022-5-A3/2E Fig. 3–1: Plastic Small Outline Transistor Package (SOT-89B) Weight approximately 0.035 g Dimensions in mm Fig. 3–2: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm 3.2. Dimensions of Sensitive Area 0.25 mm x 0.12 mm 3.3. Positions of Sensitive Areas SOT-89B x y center of the package 0.85 mm nominal TO-92UA center of the package 0.9 mm nominal Note: For all package diagrams, a mechanical tolerance of ±0.05 mm applies to all dimensions where no tolerance is explicitly given. The improvement of the TO-92UA package with the reduced tolerances will be introduced end of 2001. 6 Micronas ADVANCE INFORMATION HAL57x, HAL58x 3.4. Absolute Maximum Ratings Symbol VDD IDDZ TS TJ Parameter Supply Voltage Supply Current through Protection Device Storage Temperature Range Junction Temperature Range Pin No. 1 1 Min. –151) 2) –502) –2003) –65 –40 Max. 282) 502) 2003) 150 150 Unit V mA mA °C °C 1) –18 V with a 100 Ω series resistor at 2) as long as T max is not exceeded J 2) with a 220 Ω series resistance at pin 3) t < 2 ms pin 1 (–16 V with a 30 Ω series resistor) 1 corresponding to test circuit 1 (see Fig. 5–3) Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the “Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. 3.5. Recommended Operating Conditions Symbol VDD TA ton 1) when Parameter Supply Voltage Ambient Temperature for Continuous Operation Supply Time for Pulsed Mode Pin No. 1 Min. 3.75 –40 30 Max. 24 851) – Unit V °C µs using the the “K” type and VDD ≤ 16 V Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. The power dissipation can be reduced by repeatedly switching the supply voltage on and off (pulse mode). Please refer to section 5.4. on page 19 for details. Micronas 7 HAL57x, HAL58x ADVANCE INFORMATION 3.6. Electrical Characteristics at TJ = –40 °C to +140 °C , VDD = 3.75 V to 24 V, as not otherwise specified in Conditions Typical Characteristics for TJ = 25 °C and VDD = 12 V Symbol IDDlow IDDhigh VDDZ fosc fosc ten(O) tr tf RthJSB case SOT-89B RthJA case TO-92UA 1) Parameter Low Current Consumption over Temperature Range High Current Consumption over Temperature Range Overvoltage Protection at Supply Internal Oscillator Chopper Frequency Internal Oscillator Chopper Frequency over Temperature Range Enable Time of Output after Setting of VDD Output Rise Time Output Fall Time Thermal Resistance Junction to Substrate Backside Pin No. 1 Min. 5 Typ. 6 Max. 6.9 Unit mA Conditions 1 12 14.3 17 mA IDD = 25 mA, TJ = 25 °C, t = 20 ms TJ = 25 °C 1 – 28.5 32 V – 90 145 – kHz – 75 145 – kHz µs µs µs K/W 1) 1 20 30 1 1 – – 0.4 0.4 150 1.6 1.6 200 VDD = 12 V, Rs = 30 Ω VDD = 12 V, Rs = 30 Ω Fiberglass Substrate 30 mm x 10 mm x 1.5mm, pad size see Fig. 3–3 Thermal Resistance Junction to Soldering Point – – 150 200 K/W B > BON + 2 mT or B < BOFF – 2 mT for HAL 57x, B > BOFF + 2 mT or B < BON – 2 mT for HAL 58x 5.0 2.0 2.0 1.0 Fig. 3–3: Recommended pad size SOT-89B Dimensions in mm 8 Micronas ADVANCE INFORMATION HAL57x, HAL58x 3.7. Magnetic Characteristics Overview at TJ = –40 °C to +140 °C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Switching Type HAL 571 unipolar Parameter TJ –40 °C 25 °C 100 °C 140 °C HAL 573 unipolar –40 °C 25 °C 100 °C 140 °C HAL 574 unipolar –40 °C 25 °C 100 °C 140 °C HAL 575 latching –40 °C 25 °C 100 °C 140 °C HAL 581 unipolar inverted –40 °C 25 °C 100 °C 140 °C HAL 584 unipolar inverted –40 °C 25 °C 100 °C 140 °C Min. 8 8 8 tbd 40.2 38 34 tbd 5.5 5.5 5.5 tbd 0.5 0.5 0.5 tbd 6.5 6.5 6.5 tbd 5 5 5 tbd On point BON Typ. 12 12 12 – 45.7 43.5 40 – 9.2 9.2 9.2 – 4 4 4 – 10 10 10 – 7.2 7.2 7.2 – Max. 15.5 15.5 15.5 tbd 51.2 49 46 tbd 12 12 12 tbd 8 8 8 tbd 13.8 13.8 13.8 tbd 11.5 11.5 11.5 tbd Min. 6.5 6.5 6.5 tbd 38.2 36 32 tbd 5 5 5 tbd –8 –8 –8 tbd 8 8 8 tbd 5.5 5.5 5.5 tbd Off point BOFF Typ. 10 10 10 – 43.7 41.5 38 – 7.2 7.2 7.2 – –4 –4 –4 – 12 12 12 – 9.2 9.2 9.2 – Max. 13.8 13.8 13.8 tbd 49.2 47 44 tbd 11.5 11.5 11.5 tbd –0.5 –0.5 –0.5 tbd 15.5 15.5 15.5 tbd 12 12 12 tbd Hysteresis BHYS Min. 0.5 0.5 0.5 tbd 0.5 0.5 0.5 tbd 0.5 0.5 0.5 tbd 5 5 5 tbd 0.5 0.5 0.5 tbd 0.5 0.5 0.5 tbd Typ. 2 2 2 – 2 2 2 – 2 2 2 – 8 8 8 – 2 2 2 – 2 2 2 – Max. 3 3 3 tbd 4 4 4 tbd 3 3 3 tbd 11 11 11 tbd 3 3 3 tbd 3 3 3 tbd mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT Unit Note: For detailed descriptions of the individual types, see pages 12 and following. Micronas 9 HAL57x, HAL58x ADVANCE INFORMATION mA 25 20 IDD 15 10 5 0 –5 IDDlow IDDhigh HAL 5xx mA 20 18 IDD 16 IDDhigh 14 12 HAL 5xx VDD = 4 V 10 8 TA = –40 °C 6 4 2 0 –50 200 °C IDDlow VDD = 12 V VDD = 24 V –10 –15 –20 –15–10 –5 0 TA = 25 °C TA = 100 °C TA = 170 °C 5 10 15 20 25 30 35 V VDD 0 50 100 150 TA Fig. 3–4: Typical current consumption versus supply voltage Fig. 3–6: Typical current consumption versus ambient temperature mA 20 18 IDD 16 14 12 HAL 5xx kHz 200 180 HAL 5xx IDDhigh fosc 160 140 120 TA = –40 °C 10 8 6 4 2 0 IDDlow TA = 25 °C TA = 100 °C TA = 170 °C 60 40 20 0 –50 200 °C 100 VDD = 4 V 80 VDD = 12 V VDD = 24 V 0 1 2 3 4 VDD 5 6V 0 50 100 150 TA Fig. 3–5: Typical current consumption versus supply voltage Fig. 3–7: Typ. internal chopper frequency versus ambient temperature 10 Micronas ADVANCE INFORMATION HAL57x, HAL58x kHz 200 180 fosc 160 140 120 100 HAL 5xx kHz 200 180 fosc 160 140 120 100 HAL 5xx TA = –40 °C 80 60 40 20 0 TA = 25 °C TA = 100 °C TA = 170 °C 40 20 0 80 60 TA = –40 °C TA = 25 °C TA = 100 °C TA = 170 °C 0 5 10 15 20 25 VDD 30 V 3 4 5 6 7 VDD 8V Fig. 3–8: Typ. internal chopper frequency versus supply voltage Fig. 3–9: Typ. internal chopper frequency versus supply voltage Micronas 11 HAL571 4. Type Description 4.1. HAL 571 The HAL 571 is a medium sensitive unipolar switching sensor (see Fig. 4–1). The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In this two-wire sensor family, the HAL 581 is a sensor with the same magnetic characteristics but with an inverted output characteristic. Magnetic Features: – switching type: unipolar – medium sensitivity – typical BON: 12 mT at room temperature – typical BOFF: 10 mT at room temperature – typical temperature coefficient of magnetic switching points is 0 ppm/K – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 IDDlow BOFF Applications ADVANCE INFORMATION The HAL 571 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position such as: – applications with large airgap or weak magnets, – solid state switches, – contactless solutions to replace micro switches, – position and end point detection, and – rotating speed measurement. Current consumption IDDhigh BHYS BON B Fig. 4–1: Definition of magnetic switching points for the HAL 571 Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ –40 °C 25 °C 100 °C 140 °C Min. 8 8 8 tbd On point BON Typ. 12 12 12 – Max. 15.5 15.5 15.5 tbd Off point BOFF Min. 6.5 6.5 6.5 tbd Typ. 10 10 10 – Max. 13.8 13.8 13.8 tbd Hysteresis BHYS Min. 0.5 0.5 0.5 tbd Typ. 2 2 2 – Max. 3 3 3 tbd Magnetic Offset Min. Typ. 11 11 11 tbd Max. mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON – BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 12 Micronas ADVANCE INFORMATION HAL573 Applications The HAL 573 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position such as: – applications with large airgap or weak magnets, – solid state switches, – contactless solutions to replace micro switches, – position and end point detection, and – rotating speed measurement. 4.2. HAL 573 The HAL 573 is a low sensitive unipolar switching sensor (see Fig. 4–2). The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: – switching type: unipolar – low sensitivity – typical BON: 43.5 mT at room temperature – typical BOFF: 41.5 mT at room temperature – typical temperature coefficient of magnetic switching points is –1100 ppm/K – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Current consumption IDDhigh BHYS IDDlow 0 BOFF BON B Fig. 4–2: Definition of magnetic switching points for the HAL 573 Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ –40 °C 25 °C 100 °C 140 °C Min. 40.2 38 34 tbd On point BON Typ. 45.7 43.5 40 – Max. 51.2 49 46 tbd Off point BOFF Min. 38.2 36 32 tbd Typ. 43.7 41.5 38 – Max. 49.2 47 44 tbd Hysteresis BHYS Min. 0.5 0.5 0.5 tbd Typ. 2 2 2 – Max. 4 4 4 tbd Magnetic Offset Min. Typ. 44.7 42.5 39 tbd Max. mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON – BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas 13 HAL574 4.3. HAL 574 The HAL 574 is a medium sensitive unipolar switching sensor (see Fig. 4–3). The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In this two-wire sensor family, the HAL 584 is a sensor with the same magnetic characteristics but with an inverted output characteristic. Magnetic Features: – switching type: unipolar – medium sensitivity – typical BON: 9.2 mT at room temperature – typical BOFF: 7.2 mT at room temperature – typical temperature coefficient of magnetic switching points is 0 ppm/K – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BOFF IDDlow Applications ADVANCE INFORMATION The HAL 574 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position such as: – applications with large airgap or weak magnets, – solid state switches, – contactless solutions to replace micro switches, – position and end point detection, and – rotating speed measurement. Current consumption IDDhigh BHYS BON B Fig. 4–3: Definition of magnetic switching points for the HAL 574 Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ –40 °C 25 °C 100 °C 140 °C Min. 5.5 5.5 5.5 tbd On point BON Typ. 9.2 9.2 9.2 – Max. 12 12 12 tbd Off point BOFF Min. 5 5 5 tbd Typ. 7.2 7.2 7.2 – Max. 11.5 11.5 11.5 tbd Hysteresis BHYS Min. 0.5 0.5 0.5 tbd Typ. 2 2 2 – Max. 3 3 3 tbd Magnetic Offset Min. Typ. 8.2 8.2 8.2 tbd Max. mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON – BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 14 Micronas ADVANCE INFORMATION HAL575 Applications The HAL 575 is designed for applications with both magnetic polaritys and weak magnetic amplitudes at the sensor position such as: – applications with large airgap or weak magnets, – multipole magnet applications, – contactless solutions to replace micro switches, – rotating speed measurement. Current consumption 4.4. HAL 575 The HAL 575 is a medium sensitive latching switching sensor (see Fig. 4–4). The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption with the magnetic north pole on the branded side. The current consumption does not change if the magnetic field is removed. For changing the current consumption, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polaritys on the branded side of the package. Magnetic Features: – switching type: latching – medium sensitivity – typical BON: 4 mT at room temperature – typical BOFF: –4 mT at room temperature – typical temperature coefficient of magnetic switching points is 0 ppm/K – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz IDDhigh BHYS IDDlow BOFF 0 BON B Fig. 4–4: Definition of magnetic switching points for the HAL 575 Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ –40 °C 25 °C 100 °C 140 °C Min. 0.5 0.5 0.5 tbd On point BON Typ. 4 4 4 – Max. 8 8 8 tbd Off point BOFF Min. –8 –8 –8 tbd Typ. –4 –4 –4 – Max. –0.5 –0.5 –0.5 tbd Hysteresis BHYS Min. 5 5 5 tbd Typ. 8 8 8 – Max. 11 11 11 tbd Magnetic Offset Min. Typ. 0 0 0 tbd Max. mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BON – BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas 15 HAL581 4.5. HAL 581 The HAL 581 is a medium sensitive unipolar switching sensor with an inverted output (see Fig. 4–5). The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In this two-wire sensor family, the HAL 571 is a sensor with the same magnetic characteristics but with a normal output characteristic. Magnetic Features: – switching type: unipolar inverted – medium sensitivity – typical BON: 10 mT at room temperature – typical BOFF: 12 mT at room temperature – typical temperature coefficient of magnetic switching points is 0 ppm/K – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BON Applications ADVANCE INFORMATION The HAL 581 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position where an inverted output signal is required such as: – applications with large airgap or weak magnets, – solid state switches, – contactless solutions to replace micro switches, – position and end point detection, and – rotating speed measurement. Current consumption IDDhigh BHYS IDDlow BOFF B Fig. 4–5: Definition of magnetic switching points for the HAL 581 Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ –40 °C 25 °C 100 °C 140 °C Min. 6.5 6.5 6.5 tbd On point BON Typ. 10 10 10 – Max. 13.8 13.8 13.8 tbd Off point BOFF Min. 8 8 8 tbd Typ. 12 12 12 – Max. 15.5 15.5 15.5 tbd Hysteresis BHYS Min. 0.5 0.5 0.5 tbd Typ. 2 2 2 – Max. 3 3 3 tbd Magnetic Offset Min. Typ. 11 11 11 tbd Max. mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BOFF – BON The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 16 Micronas ADVANCE INFORMATION HAL584 Applications The HAL 584 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position where an inverted output signal is required such as: – applications with large airgap or weak magnets, – solid state switches, – contactless solutions to replace micro switches, – position and end point detection, and – rotating speed measurement. 4.6. HAL 584 The HAL 584 is a medium sensitive unipolar switching sensor with an inverted output (see Fig. 4–6). The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In this two-wire sensor family, the HAL 574 is a sensor with the same magnetic characteristics but with a normal output characteristic. Magnetic Features: – switching type: unipolar inverted – medium sensitivity – typical BON: 7.2 mT at room temperature – typical BOFF: 9.2 mT at room temperature – typical temperature coefficient of magnetic switching points is 0 ppm/K – operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Current consumption IDDhigh BHYS IDDlow 0 BON BOFF B Fig. 4–6: Definition of magnetic switching points for the HAL 584 Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ –40 °C 25 °C 100 °C 140 °C Min. 5 5 5 tbd On point BON Typ. 7.2 7.2 7.2 – Max. 11.5 11.5 11.5 tbd Off point BOFF Min. 5.5 5.5 5.5 tbd Typ. 9.2 9.2 9.2 – Max. 12 12 12 tbd Hysteresis BHYS Min. 0.5 0.5 0.5 tbd Typ. 2 2 2 – Max. 3 3 3 tbd Magnetic Offset Min. Typ. 8.2 8.2 8.2 tbd Max. mT mT mT mT Unit The hysteresis is the difference between the switching points BHYS = BOFF – BON The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 Micronas 17 HAL57x, HAL 58x 5. Application Notes 5.1. Application Circuit Figure 5–1 shows a simple application with a two-wire sensor. The current consumption can be detected by measuring the voltage over RL. For correct functioning of the sensor, the voltage between pin 1 and 2 (VDD) must be a minimum of 3.75 V. With the maximum current consumption of 17 mA, the maximum RL can be calculated as: V * 3.75 V R Lmax + SUPmin 17 mA 1 VDD ADVANCE INFORMATION 5.2. Extended Operating Conditions All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 7). Typically, the sensors operate with supply voltages above 3 V. However, below 3.75 V, the current consumption and the magnetic characteristics may be outside the specification. Note: The functionality of the sensor below 3.75 V is not tested on a regular base. For special test conditions, please contact Micronas. 5.3. Start-up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 8). During the initialization time, the current consumption is not defined and can toggle between low and high. HAL57x: After ten(O), the current consumption will be high if the applied magnetic field B is above BON. The current consumption will be low if B is below BOFF. HAL58x In case of sensors with an inverted switching behavior, the current consumption will be low if B > BOFF and high if B < BON. 1 VDD RV VSUP VSIG RL 2 or 3 GND Fig. 5–1: Application Circuit 1 For applications with disturbances on the supply line or radiated disturbances, a series resistor RV (ranging from 10 Ω to 30 Ω) and a capacitor both placed close to the sensor are recommended (see figure 5–2). In this case, the maximum RL can be calculated as: R Lmax + V SUPmin * 3.75 V * RV 17 mA VSUP VSIG 4.7 nF RL 2 or 3 GND Note: For magnetic fields between BOFF and BON, the current consumption of the HAL sensor will be either low or high after applying VDD. In order to achieve a defined current consumption, the applied magnetic field must be above BON, respectively, below BOFF. Fig. 5–2: Application Circuit 2 18 Micronas ADVANCE INFORMATION HAL57x, HAL58x 5.5. EMC and ESD For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5–2). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. Please contact Micronas for detailed information and first EMC and ESD results. 5.4. Ambient Temperature Due to internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + ∆T At static conditions and continuous operation, the following equation is valid: ∆T = IDD * VDD * Rth For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax – ∆T For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. Due to the range of IDDhigh, self-heating can be critical. The junction temperature can be reduced with pulsed supply voltage. For supply times (ton) ranging from 30 µs to 1 ms, the following equation can be used: DT + I DD * V DD * R th * t on t off ) t on RV1 100 Ω RV2 30 Ω 1 VDD VEMC 4.7 nF 2, 3 GND Fig. 5–3: Recommended EMC test circuit Micronas 19 HAL57x, HAL58x 6. Data Sheet History 1. Advanced Information: “HAL 571, 573... 575, 581, 584 Two-Wire Hall Effect Sensor Family”, Oct. 11, 2000, 6251-538-1AI. First release of the advance information. ADVANCE INFORMATION Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany Order No. 6251-538-1AI All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. 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