L239

Fast Recovery Epitaxial Diode (FRED) DSEI 60 IFAVM = 69 A VRRM = 200 V trr = 35 ns VRSM V 200 VRRM V 200 Type A C TO-247 AD C DSEI 60-02A A C A = Anode, C = Cathode Symbol IFRMS IFAVM ÿÿx IFRM IFSM Test Conditions TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 98 69 800 600 650 540 580 1800 1770 1460 1410 -40...+150 150 -40...+150 A A A A A A A A2s A2s A2s A2s °C °C °C W Nm g Features q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine q q International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25°C Mounting torque Applications q q q q 150 0.8...1.2 6 q q q Symbol Test Conditions TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 60 A; Characteristic Values typ. max. 50 40 11 0.88 1.08 0.70 4.0 0.75 0.25 35 mA mA mA V V V mW K/W K/W K/W ns A q Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders IR VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM TVJ = 150°C TVJ = 25°C Advantages q q VF VT0 rT RthJC RthCK RthJA trr IRM q q q For power-loss calculations only TVJ = TVJM High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25°C VR = 100 V; IF = 60 A; -diF/dt = 200 A/ms L £ 0.05 mH; TVJ = 100°C 35 8 50 10 © 2000 IXYS All rights reserved 1-2 036 x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions DSEI 60, 200V 160 A 140 Qr IF 120 100 80 0.8 µC 0.6 TVJ= 100°C VR = 100V IRM 30 A 25 TVJ= 100°C VR = 100V IF= 35A IF= 70A IF=140A 0.4 20 15 10 TVJ=150°C 60 IF= 35A IF= 70A IF=140A TVJ=100°C 40 20 0.2 5 TVJ=25°C 0 0.0 0.4 0.8 VF 1.2 V 0.0 10 100 A/ms 1000 -diF/dt 0 0 200 400 600 A/ms 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt 70 ns 60 trr 50 40 Fig. 3 Typ. peak reverse current IRM versus -diF/dt 5 V VFR 4 1.6 1.4 Kf 1.2 1.0 0.8 0.6 0.4 0.2 0 40 80 120 °C 160 TVJ TVJ= 100°C VR = 100V TVJ= 100°C IF = 100A 2.5 µs 2.0 tfr tfr 3 VFR 1.5 IRM 30 20 IF=35A IF=70A IF=140A 2 1.0 Qr 1 10 0 0 200 400 0 1000 0 200 400 600 diF/dt 0.5 600 A/ms 800 -diF/dt 0.0 A/ms 800 Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1.0 K/W 0.8 ZthJC 0.6 Fig. 5 Typ. recovery time trr versus -diF/dt Fig. 6 Typ peak forward voltage VFR and tfr versus diF/dt Dimensions Dim. A B C D E F G H J K L M Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 2.2 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.54 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 0.4 0.2 0.0 0.001 DSEI 60-02 N 0.01 0.1 1 t s 10 Fig. 7 Transient thermal impedance junction to case 839 © 2000 IXYS All rights reserved 2-2