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L53F3BT

L53F3BT

  • 厂商:

    ETC

  • 封装:

  • 描述:

    L53F3BT - T-1 3/4 (5 MM) INFRA RED EMITTING DIODE - List of Unclassifed Manufacturers

  • 数据手册
  • 价格&库存
L53F3BT 数据手册
Kingbright Features !MECHANICALLY !BLUE ® T-1 3/4 (5mm) INFRA-RED EMITTING DIODE L53F3BT AND SPECTRALLY MATCHED TO THE L51P3C PHOTOTRANSISTOR. TRANSPARENT LENS AVAILABLE HIGH Package Dimensions POWER OUTPUT. Description F3 Made with Gallium Arsenide Infrared Emitting diodes. Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subjected to change without notice. Selection Guide Par t No . Dic e L en s Ty p e Iv (m W/s r ) @20m A Min. L53F 3B T GaAs Blue Transparent 5 Typ. 20 Iv (m W/s r ) @50m A Min. 8 Typ. 30 V i ew i n g An g l e 2θ1/2 30 ° Note: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. L53F3BT-V.1#1 Kingbright It em Forward Voltage Reverse Current Junction Capacitance Peak Spectral Wavelength Spectral Bandwidth ® Electrical / Optical Characteristics at T)=25°C P/N F3 F3 F3 F3 F3 Sy m b o l VF IR Co lR ∆λ Ty p . 1.2 90 9 40 50 Max . 1.5 10 Un it V uA pF nm nm Co n d it io n IF=20mA VR=5V V=0 f=1MHz IF=20mA IF=20mA Absolute Maximum Ratings at T)=25°C It em Power Dissipation Forward Current Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature Sy m b o l Pd IF I P Max im u m Rat in g 100 50 1.2 5 -45~ +80 -45~ +80 Un it s mW mA A V °C °C VR Topr Tstg Notes: 1. 1/10 Duty Cycle, 0.1ms Pulse Width. 2. 4mm below package base. L53F3BT-V.1#2 Kingbright L53F3BT ® L53F3BT-V.1#3
L53F3BT 价格&库存

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