M2006C-SO20-300

M2006C-SO20-300

  • 厂商:

    ETC

  • 封装:

  • 描述:

    M2006C-SO20-300 - PIR Motion Detector - List of Unclassifed Manufacturers

  • 数据手册
  • 价格&库存
M2006C-SO20-300 数据手册
MOS (PTY) LTD. M2006C PIR Motion Detector Microsystems On Silicon Member of ELMOS Semiconductor AG General Description___________ The M2006C integrated circuit combines all required functions for a single chip Passive Infra Red (PIR) motion detector. A relay and a LED output are provided for interfacing to an occupancy detect or alarm system. One or two PIR sensors connect directly to the PIR inputs. The pull-down resistors and DC decoupling circuitry are integrated on chip. The PIR signal is converted to a 15 bit digital value. The parameters for sensitivity, pulse count and timing are set by means of connecting the corresponding inputs to VDD, VSS or leaving them open. The voltage level on the temperature compensation input is converted to a digital value with 4 bit resolution. All signal processing is performed digitally. Applications_________________ ♦ ♦ ♦ ♦ PIR motion detection Intruder detection Occupancy detection Motion sensor lights Features_____________________ ♦ Digital signal processing ♦ On chip supply regulator with wide operating voltage range ♦ Low power consumption ♦ Temperature compensation input ♦ Differential PIR sensor input ♦ Selectable relay output polarity ♦ Selectable pulse count and timing algorithm for motion detection Single Sensor Application Circuit________________________________ VSS U1 14 VSSA VB 10 C1 D1 Supply C2 11 12 VDDA PIRIN LED 20 L1 Alarm R2 RE1 IRA1 RELAY 13 NPIRIN VDD 19 Alarm 2 1 T hre shold /Sensitivity PT0 5 PT1 4 OSC PT0 SENS PT1 RPOL R1 N ear Far VDD 3 S2 8 9 18 VSS P ulse C ount DP0 DP1 17 16 DP0 DP1 TEST VSS C3 0V T ime Window DT0 DT1 7 6 DT0 DT1 M2006C TCOMP 15 VDD R3 N1 NTC R4 R5 www.mos.co.za Rev. 1.1 MOS (PTY) LTD. Microsystems On Silicon Member of ELMOS Semiconductor AG M2006C PIR Motion Detector Electrical Characteristics_______________________________________ Absolute Maximum Ratings Parameter Voltage on pins VB, RELAY, LED Current into any pin Storage Temperature Symbol VDD Tst Min -0.3 -100 -45 Max 19 100 125 Unit V mA °C Remarks One pin at a time Table 1: Electrical Characteristics (Stresses beyond those listed above may cause permanent damage to the device. Exposure to absolute maximum ratings may affect the device reliability. ESD protection: all pins will be able to withstand a discharge of a 100pF capacitor charged to 1.6kV through a 1500Ω series resistor. Test method: MIL-STD-883D method 3015). Operating Conditions (T=25°C, VDD=5V, unless stated otherwise) Parameter Temperature Operating temperature range Regulator Supply voltage Supply current Regulator output voltage VB IDD VDD 3.6 Symbol Min -25 4.8 Typ Max 70 18 200 4.4 Unit °C V µA V VB=12V Outputs unloaded Remarks Digital Inputs, Schmitt Triggers (DP0/1, PT0/1, DT0/1, SENS, TEST, RPOL) Input low voltage VIL 20 %VDD Input high voltage Pull down current on TEST Digital Outputs RELAY sink capability (open drain) LED sink capability (open drain) TCOMP Input Input voltage range Input leakage current PIRIN / NPIRIN Inputs PIRIN /NPIRIN input resistance to VSS PIRIN input DC voltage range PIRIN input AC voltage Oscillator and Filter LPF cutoff frequency HPF cutoff frequency Oscillator frequency Table 2: Operating Conditions VIH 80 50 %VDD µA mA mA VDD 1 60 µA kΩ 1.5 5 7 0.44 V mV Hz Hz kHz R1 as per table 7 Peak-to-peak input to VDD VOL
M2006C-SO20-300 价格&库存

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