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NE02107

NE02107

  • 厂商:

    ETC

  • 封装:

  • 描述:

    NE02107 - NECs NPN SILICON HIGH FREQUENCY TRANSISTOR - List of Unclassifed Manufacturers

  • 数据手册
  • 价格&库存
NE02107 数据手册
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E NE021 SERIES • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression ers umb E: O T p ar t n r e N SE ng heet a A i PLE follow atas The this d ive: t from romo 00 NE02135 TYPICAL NOISE PARAMETERS onp E021 3 n s N 13 ber E02 39 nu m N t 021 g par t are N E win e o she a NE02139 foll d a t TYPICAL NOISE PARAMETERS e Th this ued : from ontin for 107 c dis NE02 35 fice f 1 so E 0 2 l l s a le N a ec s le a s . P tail de DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The series uses the NEC gold, platinum, titanium, and platinum-silicide metallization system to provide the utmost in reliability. NE02107 is available in both common-base and common-emitter configurations and has been qualified for high-reliability space applications. 33 (SOT 23 STYLE) 35 (MICRO-X) (TA = 25°C) Rn/50 FREQ. (MHz) NFOPT (dB) GA ΓOPT (dB) MAG ANG VCE = 10 V, IC = 5 mA 500 1.2 1000 1500 2000 2500 3000 3500 500 1.5 2.0 2.4 2.6 3.6 3.7 18.60 .36 69 .14 39 (SOT 143 STYLE) 13.82 11.83 9.36 7.82 7.51 6.31 .31 .50 124 165 .12 .05 .44 .52 .68 .71 -175 -161 -141 -139 149 .06 .10 .14 .21 (TA = 25°C) FREQ. (MHz) NFOPT (dB) GA ΓOPT VCE = 10 V, IC = 20 mA 1.8 1000 1500 2000 2500 3000 3500 1.9 2.4 2.9 3.2 3.9 4.3 (dB) MAG ANG Rn/50 21.32 .16 .15 VCE = 10 V, IC = 20 mA 500 1.8 1000 1500 2000 2.1 16.15 13.50 11.02 9.12 8.10 6.48 .33 .46 .53 169 .13 17.5 9.5 7.5 0.11 156 .20 -179 -167 .09 .08 12.5 0.27 168 .16 2.3 2.6 0.36 0.43 -156 -147 .18 .21 .57 .62 .67 -154 -139 -134 .14 .27 .42 California Eastern Laboratories NE021 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT |S21|2 PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = 10 V, IC = 20 mA Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 0.5 GHz f = 1 GHz f = 2 GHz Minimum Noise Figure2 at VCE = 10 V, IC = 3 mA, f = 0.5 GHz VCE = 10 V, IC = 5 mA, f = 2 GHz Collector Cutoff Current at VCB = 15 V, IE = 0 Emitter Cutoff Current at VEB = 2 V, IC = 0 Forward Current Gain at VCE = 10 V, IC = 20 mA Collector to Base Capacitance4 at VCB = 10 V, IE = 0, f = 1 MHz Thermal Resistance (Junction to Case) Thermal Resistance (Junction to Ambient) Total Power Dissipation pF °C/W °C/W mW 580 700 350 UNITS GHz dB dB dB dB dB µA µA 20 70 0.6 MIN NE02100 00 (CHIP) TYP 4.5 18.5 13 6.5 1.5 2.7 MAX MIN NE02107 07/07B3 TYP 4.5 18.5 13 6.5 1.5 2.7 MAX 5.5 5.5 NFMIN 4.5 1.0 1.0 250 1.0 70 20 4.5 1.0 1.0 ICBO IEBO hFE CCB RTH (J-C) RTH (J-A) PT5 70 0.6 250 1.0 90 500 700 ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = 10 V, IC = 20 mA Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 0.5 GHz f = 1 GHz f = 2 GHz Minimum Noise Figure6 at VCE = 10 V, IC = 3 mA, f = 0.5 GHz VCE = 10 V, IC = 5 mA, f = 1 GHz f = 2 GHz Collector Cutoff Current at VCB = 15 V, IE = 0 Emitter Cutoff Current at VEB = 2 V, IC = 0 Forward Current Gain at VCE = 10 V, IC = 20 mA Collector to Base Capacitance4 at VCB = 10 V, IE = 0 , f = 1 MHz Thermal Resistance (Junction to Case) Thermal Resistance (Junction to Ambient) Total Power Dissipation pF °C/W °C/W mW 666 150 290 NE02133 NE02135 NE02139 2SC2351 2SC2149 2SC4092 33 35 39 MIN TYP MAX MIN TYP MAX MIN TYP MAX 4.5 4.5 4.5 SYMBOLS fT |S21E|2 UNITS GHz dB dB dB 9 4 15 10 5 5 18.5 13 5.7 9 10 NFMIN dB dB dB µA µA 40 70 0.75 1.5 3 1.5 1.5 2.7 1.0 1.0 200 1.0 20 70 0.6 4.0 1.0 1.0 250 1.0 120 600 500 500 200 40 70 .75 1.0 1.0 200 ICBO IEBO hFE CCB RTH (J-C) RTH (J-A) PT5 Notes: 1. Electronic Industrial Association of Japan. 2. Input and output are tuned for optimum noise figures. 3. Common base electrical charactristics see S-Parameters. 4. CCB measurement employs a three-terminal capacitance bridge 5. Minimum dissipations based on RTH (J-A) for applications without effective incorporating a guard circuit. The emitter terminal shall be heat sink, maximum dissipations based on RTH (J-C) for applications with connected to the guard terminal. effective heat sink. 6. Output and Input are tuned for minimum noise figure. NE021 SERIES ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Junction Temperature Storage Temperature UNITS V V V mA °C °C RATINGS 25 122 3 2003 -65 to +2004 800 NE02100, NE02107 DC POWER DERATING CURVES Total Power Dissipation, PT (mW) 70 NE02100 RTH(J-C) = 70˚C/W NE02107 RTH(J-C) = 90˚C/W 600 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Typical BVCER = 25 V for R ≤ 300 Ω. 3. Maximum TJ for the NE02133 and NE02139 is +150°C. 4. Maximum storage temperature for the NE02135 is -65 to +150°C. Maximum storage temperature for the NE02133 and NE02139 is -55 to 150°C. 400 RTH (J-A) = 500˚C/W NE02107 200 0 0 50 100 150 200 TYPICAL PERFORMANCE CURVES (TA = 25°C) NE02133 DC POWER DERATING CURVES 400 800 Ambient Temperature, TA (°C) NE02135 DC POWER DERATING CURVES Collector Dissipation, PC (mW) 300 1 2 200 3 4 100 1. Mounted On Al2O3 Substrate (32x21x10mm) And Encapsulated In Epoxy Resin (RTH (J-A) = 267˚C/W 2. Mounted On Al2O3 Substrate (18x29x0.8mm) RTH(J-A) = 370˚C/W 3. Mounted On Al2O3 Substrate (10x15x0.8mm) RTH(J-A) = 490˚C/W 4. Free Air, RTH(J-A) = 666˚C/W Total Power Dissipation, PT (mW) 600 WITH INFINITE HEAT SINK RTH(J-C) = 120˚ C/W MOUNTED ON AI2O3 SUBSTRATE (20X50X0.6") RTH(J-A) = 190˚C/W 400 200 FREE AIR RTH(J-A) = 600˚C/W 0 0 0 50 100 150 200 0 50 100 150 200 Ambient Temperature, TA (°C) Ambient Temperature, TA (°C) VOLTAGE CURRENT CHARACTERISTICS DEVICE CAPACITANCE Collector to Base Capacitance, CCB (pF) Emitter to Base Capacitance, CEB (pF) 70 50 VCE = 10 V 2 f =1 MHz IE = 0 Collector Current, IC (mA) 30 20 10 7 5 3 2 1 0.7 CCB 1 CEB 0.7 0.5 0.3 0 0.5 1 2 3 5 7 10 20 30 0.5 0.6 0.7 0.8 0.9 Base to Emitter Voltage, VBE (V) Collector to Base Voltage, VCB (V) Emitter to Base Voltage, VEB (V) NE021 SERIES TYPICAL PERFORMANCE CURVES (TA = 25°C) NE02107, NE02135 GAIN vs. FREQUENCY 40 VCE = 10 V IC = 20 mA 32 NE02133 GAIN vs. FREQUENCY 40 VCE = 10 V IC = 20mA 32 Gain (dB) Gain (dB) 24 24 2 |S21| 2 16 MAG 16 |S21| MAG 8 8 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 Frequency, f (GHz) Frequency, f (GHz) NE02107 INSERTION GAIN vs. COLLECTOR CURRENT 30 100 MHz 5 NOISE FIGURE vs. COLLECTOR CURRENT VCE = 10 V 2 GHz Insertion Gain, |S21|2 (dB) 25 20 500 MHz 15 1 GHz 10 2 GHz 5 0 0 10 20 30 40 50 60 70 Noise Figure, NF (dB) VCE = 10 V 4 3 2 0.5 GHz NE02133 NE02107, NE02135 1 0 1 2 3 5 7 10 20 30 Collector Current, IC (mA) Collector Current, IC (mA) GAIN BANDWIDTH PRODUCT AND FORWARD CURRENT GAIN vs. COLLECTOR CURRENT 20 500 5.0 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY 5 VCE = 10 V IC = 5 mA Associated Gain, GA (dB) 4 GA 16 fT 300 VCE = 10 V 200 2.0 3.0 3 NF 2 12 8 100 1.0 1 NE02133 NE02100, NE02107, NE02135 4 70 50 1 2 3 57 10 hFE 0.7 0.5 20 30 50 70 100 0 0.1 0.2 0.3 0.5 0.7 1 2 3 0 Frequency, f (GHz) Collector Current, IC (mA) Gain Bandwidth Product, fT (GHz) DC Forward Current Gain, hFE Noise Figure, NF (dB) NE021 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS1 (TA = 25°C) j50 j25 j100 90˚ S21 0.1 GHz 150˚ 120˚ 60˚ j10 S11 5 GHz S21 5 GHz 25 50 S22 5 GHz 100 S22 0.1 GHz 0 S12 5 GHz S12 0.1 GHz 30˚ 0 10 180˚ 0.5 0.4 0.3 0.2 0.1 0˚ -j10 10 S11 0.1 GHz -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz (VCE = 10 V, IC = 20 mA) -150˚ 15 20 -120˚ -30˚ S21 25 -90˚ -60˚ NE02100 VCE = 10 V, IC = 5 mA FREQUENCY (MHz) 100 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 100 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 100 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 MAG .84 .75 .73 .71 .71 .71 .70 .70 .70 .70 .70 .75 .72 .72 .71 .71 .71 .71 .71 .70 .70 .70 .68 .72 .72 .72 .72 .72 .71 .71 .71 .71 .71 S11 ANG -32 -114 -150 -164 -173 -179 176 172 168 165 161 -47 -137 -162 -173 -179 176 172 168 165 162 159 -70 -152 -170 -178 177 172 169 166 162 160 157 MAG 11.83 7.22 4.13 2.85 2.16 1.75 1.49 1.28 1.13 1.02 .92 20.04 9.40 4.97 3.37 2.56 2.05 1.74 1.50 1.33 1.19 1.08 29.75 10.58 5.42 3.65 2.74 2.21 1.86 1.61 1.42 1.28 1.15 S21 ANG 160 113 89 76 66 57 49 42 34 27 20 153 105 86 75 66 58 51 44 37 30 24 145 99 84 74 66 58 51 44 38 31 25 MAG .03 .07 .09 .09 .10 .10 .11 .12 .12 .13 .14 .02 .05 .06 .07 .08 .09 .10 .11 .12 .13 .14 .02 .04 .05 .06 .07 .09 .10 .11 .12 .13 .14 S12 ANG 70 36 27 27 28 30 32 33 34 34 35 65 34 34 38 41 43 44 44 44 44 43 59 37 43 48 50 51 52 51 51 49 48 .94 .56 .39 .36 .33 .33 .34 .35 .37 .39 .41 .89 .41 .27 .23 .22 .23 .24 .25 .27 .29 .31 .81 .30 .19 .17 .17 .17 .19 .20 .22 .24 .27 S22 MAG ANG -16 -45 -51 -56 -61 -67 -73 -80 -88 -94 -100 -24 -57 -62 -66 -71 -76 -82 -88 -95 -100 -106 -33 -65 -69 -73 -78 -83 -87 -93 -99 -105 -109 .11 .29 .54 .77 .97 1.14 1.25 1.35 1.41 1.47 1.49 .11 .39 .69 .92 1.09 1.19 1.27 1.31 1.36 1.39 1.39 .14 .53 .87 1.05 1.17 1.23 1.27 1.30 1.34 1.33 1.34 K MAG2 (dB) 26.4 19.9 16.9 15.0 13.5 10.1 8.3 6.9 5.9 4.9 4.2 29.2 22.5 19.0 16.8 13.2 10.9 9.2 7.9 6.8 5.9 5.1 31.6 24.3 20.4 16.4 13.2 11.3 9.7 8.4 7.3 6.4 5.6 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 20 mA Notes: 1. S-Parameters include bond wires. BASE:Total 1 wire (s), 1 per bond pad, 0.0115 (291 µm) long each wire. EMITTER: Total 2 wire (s), 1 per side, 0.015" (393 µm) long each wire. COLLECTOR: Total 1 wire (s), 1 per bond pad, 0.0072" (182 µm) WIRE: 0.0007' (17.7 µm) dia., gold. long each wire. 2. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE021 SERIES TYPICAL COMMON BASE SCATTERING PARAMETERS (TA = 25°C) j50 90˚ 120˚ j100 60˚ S12 4 GHz j25 S11 4 GHz 150˚ j10 S11 0.1 GHz 10 30˚ 0 25 50 100 S22 0.1 GHz 0 180˚ S21 4 GHz S12 0.1 GHz 0.4 0.5 .10 .15 .20 .25 0˚ S21 0.1 GHz 0.8 1.2 1.6 -30˚ -j10 -150˚ -j100 -j50 -j25 S22 4 GHz Coordinates in Ohms Frequency in GHz (VCB = 10 V, IC = 20 mA) -120˚ S21 2.0 -90˚ -60˚ NE02107B VCB = 10 V, IC = 5 mA FREQUENCY (MHz) 100 500 1000 1500 2000 2500 3000 3500 4000 100 500 1000 1500 2000 2500 3000 3500 4000 100 500 1000 1500 2000 2500 3000 3500 4000 100 600 1000 1500 2000 2500 3000 3500 4000 Note: 1. Gain Calculations: MAG = |S21| |S12| S11 MAG .79 .79 .79 .83 .83 .87 .87 .87 .86 .88 .88 .87 .90 .92 .95 .96 .96 .95 .92 .93 .92 .96 .97 1.01 1.02 1.03 1.02 .95 .94 .94 .98 .99 1.04 1.05 1.05 1.03 ANG 175 170 163 157 149 145 136 126 117 177 171 164 159 152 144 135 125 116 176 171 164 159 152 142 132 121 112 176 171 163 158 151 141 132 120 111 MAG 1.77 1.78 1.72 1.71 1.57 1.53 1.40 1.21 1.12 1.84 1.84 1.83 1.82 1.72 1.68 1.57 1.45 1.33 1.90 1.89 1.89 1.88 1.81 1.75 1.67 1.55 1.42 1.93 1.91 1.91 1.90 1.83 1.81 1.72 1.58 1.46 S21 ANG -10 -24 -44 -64 -87 -99 -122 -140 -164 -6 -19 -38 -57 -76 -92 -113 -135 -156 -6 -19 -37 -55 -75 -90 -110 -132 -154 -7 -20 -38 -57 -77 -92 -115 -136 -157 MAG .01 .01 .01 .03 .06 .08 .11 .13 .17 .01 .01 .01 .03 .06 .08 .12 .15 .18 .01 .01 .01 .03 .06 .09 .12 .15 .18 .01 .01 .01 .03 .06 .09 .12 .15 .18 S12 ANG 106 111 117 109 106 103 95 86 76 -31 112 132 118 117 108 98 88 77 56 139 129 126 119 110 100 89 79 -74 116 133 126 119 111 100 88 77 MAG 1.01 1.02 1.05 1.09 1.09 1.08 1.11 1.10 1.08 1.01 1.00 1.05 1.08 1.10 1.09 1.13 1.12 1.10 1.02 1.01 1.05 1.09 1.10 1.09 1.13 1.13 1.12 1.02 1.01 1.05 1.09 1.10 1.09 1.13 1.13 1.10 S22 ANG -9 -22 -40 -58 -75 -81 -96 -111 -125 -6 -18 -36 -53 -69 -81 -96 -111 -126 -6 -18 -36 -53 -69 -80 -95 -110 -125 -7 -19 -36 -53 -69 -81 -97 -113 -127 K -0.477 -0.808 -1.645 -1.076 -0.782 -0.574 -0.484 -0.427 -0.180 0.671 -0.431 -1.429 -0.950 -0.857 -0.707 -0.601 -0.458 -0.317 0.315 -0.850 -1.189 -0.960 -0.832 -0.727 -0.658 -0.532 -0.388 0.239 -0.583 -1.140 -0.901 -0.798 -0.727 -0.591 -0.502 -0.341 MAG1 (dB) 22.480 22.504 22.355 17.559 14.177 12.816 11.047 9.688 8.188 22.648 22.648 22.625 17.830 14.574 13.222 11.167 9.853 8.686 22.788 22.765 22.765 17.970 14.795 12.888 11.435 10.142 8.970 22.856 22.810 22.810 18.016 14.843 13.034 11.563 10.226 9.091 VCB = 10 V, IC = 10 mA VCB = 10 V, IC = 20 mA VCB = 10 V, IC = 40 mA (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE021 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C) j50 j25 S11 4 GHz j10 j100 90˚ S21 0.1 GHz 150˚ S12 4 GHz 120˚ 60˚ 30˚ 0 10 25 S22 4 GHz 50 100 S22 0.1 GHz S11 0.1 GHz 0 180˚ S12 0.1 GHz 0.5 .10 .15 .20 .25 0˚ S21 6 4 GHz 12 18 24 -120˚ -30˚ -j10 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz (VCE = 10 V, IC = 20 mA) -150˚ S21 30 -90˚ -60˚ NE02107 VCE = 10 V, IC = 5 mA FREQUENCY (MHz) 100 500 1000 1500 2000 2500 3000 3500 4000 100 500 1000 1500 2000 2500 3000 3500 4000 100 500 1000 1500 2000 2500 3000 3500 4000 100 500 1000 1500 2000 2500 3000 3500 4000 Note: 1. Gain Calculations: MAG = |S21| |S12| S11 MAG .82 .70 .68 .68 .68 .67 .67 .68 .68 .69 .67 .67 .67 .67 .67 .67 .67 .67 .58 .67 .67 .67 .67 .67 .68 .67 .68 .55 .67 .68 .68 .68 .68 .68 .68 .68 ANG -36 -125 -161 -178 170 159 151 142 134 -54 -145 -172 175 165 15 146 137 130 -79 -161 179 168 159 150 142 134 127 -96 -167 176 166 158 148 141 133 126 MAG 13.90 7.38 4.17 2.87 2.18 1.73 1.49 1.27 1.16 22.57 9.37 5.00 3.40 2.57 2.07 1.80 1.53 1.41 31.63 10.57 5.47 3.70 2.78 2.26 1.96 1.68 1.53 35.99 10.79 5.52 3.75 2.81 2.26 1.96 1.66 1.51 S21 ANG 157 107 82 66 53 40 28 17 6 150 100 79 65 53 41 30 20 8 142 95 77 64 53 42 31 21 9 137 93 75 63 52 41 30 20 9 MAG .01 .07 .08 .09 .10 .11 .12 .13 .14 .01 .05 .06 .08 .09 .11 .12 .14 .15 .01 .03 .04 .07 .09 .11 .12 .14 .16 .01 .02 .04 .07 .09 .11 .13 .14 .16 S12 ANG 73 35 25 24 26 22 23 19 17 69 36 36 37 40 35 34 30 23 65 45 46 46 48 44 39 36 27 63 48 53 52 53 46 42 38 29 MAG .95 .54 .39 .38 .37 .38 .40 .43 .45 .89 .39 .27 .26 .25 .28 .31 .34 .36 .81 .28 .19 .19 .20 .23 .25 .28 .31 .75 .24 .17 .17 .18 .21 .24 .27 .30 S22 ANG -16 -47 -59 -68 -78 -90 -102 -112 -122 -23 -58 -70 -77 -87 -97 -108 -116 -125 -32 -68 -78 -84 -96 -105 -114 -122 -128 -37 -69 -77 -83 -96 -106 -115 -123 -131 K 0.022 0.345 0.628 0.783 0.928 1.081 1.116 1.119 1.101 0.085 0.489 0.821 0.907 1.071 1.052 1.074 1.046 1.023 0.170 0.774 1.205 1.041 1.077 1.058 1.063 1.065 0.947 0.236 1.157 1.192 1.028 1.065 1.057 1.008 1.066 0.984 MAG1 (dB) 31.430 20.230 17.170 15.036 13.385 10.227 8.867 7.802 7.249 33.535 22.728 19.208 16.284 12.933 11.355 10.096 9.080 8.803 35.001 25.470 18.622 15.998 13.207 11.658 10.601 9.238 9.806 35.562 24.914 18.752 16.271 13.383 11.669 11.227 9.175 9.749 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 30 mA (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE021 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C) j50 j25 j100 90˚ 120˚ S21 150˚ 0.1 GHz 60˚ S12 2 GHz S12 0.1 GHz 100 0 30˚ j10 S11 2 GHz 0 10 25 50 180˚ 3 S21 2 GHz 0.6 .12 .18 .24 .30 0˚ -j10 S22 2 GHz S11 0.1 GHz S22 0.1 GHz 8 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHZ (VCE = 10 V, IC = 20 mA) -150˚ 12 16 -120˚ -30˚ S21 20 -90˚ -60˚ NE02133 VCE = 10 V, IC = 5 mA FREQUENCY (MHz) 100 200 500 1000 1500 2000 100 200 500 1000 1500 2000 100 200 500 1000 1500 2000 Note: 1. Gain Calculations: MAG = |S21| |S12| S11 MAG .80 .63 .37 .27 .27 .29 .66 .46 .27 .21 .23 .26 .51 .33 .21 .19 .21 .24 ANG -37 -63 -114 -158 172 151 -48 -78 -129 -169 165 146 -61 -91 -143 -177 160 142 MAG 13.53 10.48 5.56 3.02 2.16 1.74 19.53 13.52 6.29 3.31 2.35 1.87 19.37 15.04 6.57 3.41 2.41 1.92 S21 ANG 150 129 99 76 63 49 139 118 93 74 62 50 129 109 89 72 61 49 MAG .03 .04 .09 .15 .21 .27 .02 .03 .09 .16 .23 .29 .02 .03 .08 .16 .24 .30 S12 ANG 73 59 61 60 63 58 79 58 67 66 64 59 79 64 71 69 67 59 MAG .91 .72 .48 .40 .34 .31 .81 .58 .38 .34 .29 .26 .70 .48 .33 .32 .26 .23 S22 ANG -18 -29 -38 -41 -49 -62 -27 -35 -36 -40 -47 -62 -32 -35 -32 -37 -45 -59 K 0.178 0.477 0.795 0.988 1.039 1.031 0.235 0.761 0.900 0.993 1.007 1.011 0.497 0.909 1.010 1.005 1.006 1.013 MAG1 (dB) 26.542 24.183 17.908 13.039 8.914 7.022 29.897 26.539 18.444 13.157 9.593 7.438 29.861 27.001 18.522 12.847 9.524 7.369 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 20 mA (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE021 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C) j50 j25 S11 4 GHz j10 j100 90˚ 120˚ S21 0.1 GHz 60˚ S12 0.1 GHz 150˚ 30˚ 0 10 25 S22 4 GHz 50 100 S22 0.1 GHz S11 0.1 GHz 0 180˚ S21 4 GHz 6 8 0.5 0.1 .15 0.2 .25 0˚ S12 4 GHz -30˚ -j10 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz (VCE = 10 V, IC = 20 mA) -150˚ 12 24 -120˚ S21 30 -90˚ -60˚ NE02135 VCE = 10 V, IC = 5 mA FREQUENCY (MHz) 100 500 1000 1500 2000 2500 3000 3500 4000 MAG .84 .68 .66 .65 .65 .66 .66 .67 .68 S11 ANG -36 -126 -163 178 163 151 141 129 121 MAG 13.82 7.18 4.02 2.75 2.10 1.68 1.46 1.24 1.14 S21 ANG 156 106 81 64 52 39 27 17 5 MAG .02 .08 .09 .10 .12 .13 .14 .16 .17 S12 ANG 73 35 27 27 30 26 26 26 23 MAG .94 .51 .34 .31 .31 .31 .33 .36 .38 S22 ANG -18 -53 -66 -74 -83 -95 -106 -116 -127 0.023 0.368 0.664 0.890 0.960 1.075 1.125 1.099 1.069 K MAG1 (dB) 28.395 19.530 16.500 14.393 12.430 9.441 8.030 6.974 6.656 VCE = 10 V, IC = 10 mA 100 500 1000 1500 2000 2500 3000 3500 4000 0.666 0.592 0.604 0.595 0.609 0.615 0.632 0.642 0.649 -50 -147 -179 163 152 139 126 114 104 23.536 9.285 4.955 3.288 2.527 2.022 1.726 1.439 1.315 149 99 77 63 46 39 28 12 5 0.004 0.033 0.051 0.073 0.109 0.132 0.152 0.175 0.199 65 39 39 39 36 41 38 27 27 0.854 0.363 0.276 0.240 0.195 0.204 0.212 0.233 0.256 -28 -72 -82 -87 -104 -115 -125 -135 -144 0.634 0.859 1.128 1.172 1.138 1.180 1.168 1.155 1.113 37.697 24.493 17.700 14.054 11.397 9.287 8.071 6.763 6.156 VCE = 10 V, IC = 20 mA 100 500 1000 1500 2000 2500 3000 3500 4000 0.545 0.593 0.602 0.605 0.616 0.623 0.639 0.644 0.649 -74 -163 173 158 148 135 123 111 102 32.448 10.200 5.276 3.505 2.718 2.159 1.841 1.549 1.411 140 94 75 61 46 39 29 13 6 0.002 0.020 0.040 0.072 0.108 0.133 0.156 0.180 0.205 67 46 49 50 44 48 43 32 32 0.763 0.270 0.217 0.188 0.161 0.176 0.188 0.210 0.232 -38 -80 -89 -93 -110 -120 -128 -135 -142 1.982 1.428 1.445 1.210 1.115 1.142 1.110 1.094 1.060 36.428 23.189 17.244 14.212 11.942 9.815 8.698 7.477 6.881 VCE = 10 V, IC = 30 mA 100 500 1000 1500 2000 2500 3000 3500 4000 .58 .64 .65 .65 .66 .66 .66 .67 .68 -95 -169 173 162 152 141 132 122 115 35.35 10.11 5.15 3.49 2.63 2.10 1.82 1.54 1.44 134 91 74 62 52 39 29 20 9 .01 .03 .06 .08 .11 .13 .15 .17 .20 59 50 55 63 54 46 42 38 31 .72 .22 .14 .14 .15 .17 .19 .22 .24 -40 -82 -97 -103 -112 -122 -129 -137 -146 0.275 0.958 1.016 1.103 1.058 1.095 1.086 1.089 0.970 35.484 25.276 18.563 14.446 12.315 10.207 9.052 7.748 8.573 See note on next page. NE021 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C) j50 j25 S11 2 GHz j10 j100 90˚ 120˚ 60˚ 150˚ S21 0.1 GHz S12 S21 0.1 GHz 2 GHz 4 8 12 .04 .08 S11 0.1 GHz 30˚ S12 2 GHz 16 20 0˚ 0 10 25 50 S22 2 GHz 100 S22 0.1 GHz 0 180˚ -j10 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz (VCE = 10 V, IC = 5 mA) -150˚ .12 .16 -120˚ -30˚ S21 .20 -90˚ -60˚ NE02139 VCE = 10 V, IC = 5 mA FREQUENCY (MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 MAG .78 .71 .57 .50 .49 .49 .51 .52 .53 .53 .56 S11 ANG -39 -74 -114 -143 -164 -180 168 160 150 142 135 MAG 13.96 11.81 7.51 5.68 4.16 3.50 2.83 2.59 2.19 2.09 1.79 S21 ANG 156 131 107 93 72 81 55 63 49 42 36 MAG .027 .058 .081 .093 .104 .117 .129 .144 .155 .173 .181 S12 ANG 63 62 42 39 37 37 37 36 38 36 36 MAG .91 .77 .54 .42 .35 .30 .27 .25 .22 .21 .19 S22 ANG -21 -36 -50 -56 -59 -63 -66 -73 -79 -88 -98 0.167 0.329 0.563 0.738 0.860 0.938 0.977 1.017 1.046 1.059 1.096 K MAG1 (dB) 27.135 21.430 18.797 16.985 15.398 14.105 12.978 11.247 9.850 8.908 8.065 VCE = 10 V, IC = 10 mA 100 200 400 600 800 1000 1200 1400 1600 1800 2000 .63 .56 .47 .45 .45 .47 .48 .50 .51 .52 .54 -58 -98 -139 -164 180 168 157 152 143 136 130 20.38 15.27 8.90 6.48 4.66 3.89 3.13 2.86 2.41 2.30 1.97 145 119 98 87 76 69 61 54 48 42 36 .025 .039 .062 .073 .091 .109 .126 .143 .160 .181 .191 58 60 44 50 49 50 48 44 46 42 41 .81 .61 .39 .30 .25 .21 .18 .17 .14 .14 .12 -31 -45 -57 -60 -63 -68 -71 -80 -88 -99 -113 0.267 0.534 0.773 0.912 0.984 1.023 1.038 1.044 1.045 1.048 1.084 29.113 23.790 20.566 18.320 16.309 13.826 12.288 11.116 10.104 9.263 8.371 VCE = 10 V, IC = 20 mA 100 200 400 600 800 1000 1200 1400 1600 1800 2000 Note: 1. Gain Calculations: MAG = |S21| |S12| 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| .53 .47 .43 .44 .45 .46 .48 .50 .51 .52 .55 -82 -121 -157 -177 170 161 152 147 139 133 127 25.86 17.23 9.44 6.74 4.82 4.01 3.23 2.95 2.48 2.36 2.02 136 110 92 83 74 67 39 53 47 41 36 .021 .033 .051 .069 .090 .107 .127 .149 .164 .187 .197 35 61 50 57 55 54 54 50 50 45 44 .72 .48 .30 .23 .20 .16 .14 .13 .10 .10 .09 -41 -51 -58 -60 -61 -66 -71 -80 -91 -104 -121 0.435 0.711 0.905 0.971 1.024 1.044 1.028 1.035 1.038 1.030 1.055 30.904 25.017 21.298 18.616 15.561 13.619 12.483 11.252 10.206 9.506 8.680 (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain, MSG = Maximum Stable Gain NE021 SERIES OUTLINE DIMENSIONS (Units in mm) NE02100 (CHIP) PACKAGE OUTLINE 07 E MARKING 5.0 MIN (ALL LEADS) 0.35±0.01 0.30 0.29 0.23 0.052 C B 0.5±0.07 BASE EMITTER 0.35±0.01 0.094 0.106 INTERNAL CODE E 1.0±0.1 45˚ MONTH INDICATOR YEAR INDICATOR 0.07φ +0.06 0.1 -0.03 +0.4 2.5 -0.2 +0.4 1.3 -0.2 *07B has emitter and base reversed.. PACKAGE OUTLINE 33 PACKAGE OUTLINE 33 RECOMMENDED P.C.B. LAYOUT +0.2 2.8 -0.3 2.4 2.9 ± 0.2 0.95 1.9 2 +0.10 0.4 -0.05 (ALL LEADS) 2 3 3 1 +0.2 1.5 -0.1 +0.10 0.65 -0.15 1.9 0.95 1.1 to 1.4 0.8 LEAD CONNECTIONS 1. Emitter 2. Base 3. Collector 0 to 0.1 +0.10 0.16 -0.06 0.8 1 1.0 NE021 SERIES PACKAGE OUTLINE 35 (MICRO-X) E 3.8 MIN ALL LEADS 0.5±0.06 C B 45˚ E 2.55±0.2 +0.06 0.1 -0.04 φ2.1 1.8 MAX 0.55 PACKAGE OUTLINE 39 (SOT-23) +0.2 2.8 -0.3 +0.2 1.5 -0.1 PACKAGE OUTLINE 39 RECOMMENDED P.C.B. LAYOUT +0.10 0.4 -0.05 (LEADS 2, 3, 4) 2.4 2.9 ± 0.2 0.95 0.85 2 3 1.9 2 3 1 +0.10 0.6 -0.05 4 1.9 +0.2 1.1 -0.1 1.0 0.8 0.16 +0.10 -0.06 1 1.0 5˚ 0 to 0.1 5˚ 4 LEAD CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter ORDERING INFORMATION PART NUMBER NE02100 NE02107/NE02107B NE02133-T1B NE02135 NE02139-T1 QUANTITY 100 1 3000 1 3000 PACKAGING Waffle Pack Hard Pack Tape & Reel ESD Bag Tape & Reel Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 08/05/2002 A Business Partner of NEC Compound Semiconductor Devices, Ltd.
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